公开(公告)号：US07303996B2

公开(公告)日：2007-12-04

申请号：US10677158

申请日：2003-10-01

申请人： Ming-Fang Wang ,  Tuo-Hung Hou ,  Kai-Lin Mai ,  Liang-Gi Yao ,  Shih-Chang Chen

发明人： Ming-Fang Wang ,  Tuo-Hung Hou ,  Kai-Lin Mai ,  Liang-Gi Yao ,  Shih-Chang Chen

IPC分类号： H01L21/302

CPC分类号： H01L21/28185 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the gate dielectric layer stack; lithographically patterning and etching to form a gate structure; and, carrying out at least one plasma treatment of the gate structure comprising a plasma source gas selected from the group consisting of H2, N2, O2, and NH3.

摘要翻译： 一种用于处理包括高K栅极电介质堆叠的栅极结构以改善电性能特性的方法，包括在硅衬底上提供包括二元氧化物的栅极介电层堆叠; 在所述栅极介电层堆叠上形成多晶硅层; 光刻图案化和蚀刻以形成栅极结构; 以及进行至少一种栅极结构的等离子体处理，所述栅极结构包括选自H 2，N 2，O 2， / SUB>和NH 3。

公开(公告)号：US20050074978A1

公开(公告)日：2005-04-07

申请号：US10677158

申请日：2003-10-01

申请人： Ming-Fang Wang ,  Tuo-Hung Hou ,  Kai-Lin Mai ,  Liang-Gi Yao ,  Shih-Chang Chen

发明人： Ming-Fang Wang ,  Tuo-Hung Hou ,  Kai-Lin Mai ,  Liang-Gi Yao ,  Shih-Chang Chen

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28185 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the gate dielectric layer stack; lithographically patterning and etching to form a gate structure; and, carrying out at least one plasma treatment of the gate structure comprising a plasma source gas selected from the group consisting of H2, N2, O2, and NH3.

摘要翻译： 一种用于处理包括高K栅极电介质堆叠的栅极结构以改善电性能特性的方法，包括在硅衬底上提供包括二元氧化物的栅极介电层堆叠; 在所述栅极介电层堆叠上形成多晶硅层; 光刻图案化和蚀刻以形成栅极结构; 以及进行包括选自H 2，N 2，O 2和NH 3的等离子体源气体的栅极结构的至少一个等离子体处理。