INK-JET HEAD AND INK-JET RECORDING APPARATUS
    4.
    发明申请
    INK-JET HEAD AND INK-JET RECORDING APPARATUS 有权
    喷墨头和喷墨记录装置

    公开(公告)号:US20120212545A1

    公开(公告)日:2012-08-23

    申请号:US13396830

    申请日:2012-02-15

    CPC classification number: B41J2/14233 B41J2002/14491 B41J2202/08

    Abstract: An ink-jet head includes a nozzle plate having nozzles, a vibrating plate on the nozzle plate, liquid chambers formed of spaces partitioned by division walls, a piezoelectric element having a common electrode, a piezoelectric body and an individual electrode layered in this order on a surface of the vibrating plate, a first insulator film having a first opening and a second insulator film having a second opening layered in this order on the first surface, a first wire drawn from the individual electrode via the first opening and the second opening, a third insulator film having a third opening on the first wire; and a second wire drawn via the third opening, where the third insulator film is formed in a first region of the second insulator film and is not formed in a second region excluding a region including the first wire formed above the liquid chamber.

    Abstract translation: 喷墨头包括具有喷嘴的喷嘴板,喷嘴板上的振动板,由分隔壁隔开的空间形成的液体室,具有公共电极的压电元件,压电体和单独的电极,按此顺序分层 所述振动板的表面,具有第一开口的第一绝缘膜和在所述第一表面上依次层叠的第二开口的第二绝缘膜,经由所述第一开口和所述第二开口从所述单独电极拉出的第一电线, 第三绝缘膜,在第一导线上具有第三开口; 以及经由所述第三开口拉出的第二导线,其中所述第三绝缘体膜形成在所述第二绝缘膜的第一区域中,并且不形成在除了在所述液体室之上形成的所述第一线的区域之外的第二区域中。

    Method for manufacturig a semiconductor device including a shallow trench isolation
    5.
    发明申请
    Method for manufacturig a semiconductor device including a shallow trench isolation 失效
    制造包括浅沟槽隔离的半导体器件的方法

    公开(公告)号:US20070252222A1

    公开(公告)日:2007-11-01

    申请号:US11824763

    申请日:2007-07-02

    Applicant: Kanshi Abe

    Inventor: Kanshi Abe

    Abstract: A method of manufacturing a semiconductor device having a semiconductor substrate that includes an active region for forming transistor elements, which includes a gate, and an element isolation region for isolating the transistor elements separately each other, which has a STI structure, the method comprises; first—ion implanting first ions onto the surface of the semiconductor substrate in a region other than a stress region in the active region, which is located at the interface with the element isolation region, in the stress region, a potential stress is generated by forming the element isolation region and/or the difference between a material of the element isolation region and a material of the semiconductor substrate, so that a first impurity region for a source and/or a drain is formed in the active region in which the gate is not formed; and second-ion implanting second ions each of which mass is smaller than that of each of the first ions so that a second ion impurity region is formed in the stress region.

    Abstract translation: 一种具有半导体器件的半导体器件的制造方法,该半导体器件包括用于形成晶体管元件的有源区,其包括栅极,以及用于将晶体管元件彼此分离的元件隔离区域,所述元件隔离区域具有STI结构。 在位于应力区域的与元件隔离区的界面处的有源区域以外的应力区域之外的第一离子注入到半导体衬底的表面上的第一离子通过成形产生电位应力 元件隔离区域和/或元件隔离区域的材料与半导体衬底的材料之间的差异,使得在栅极和/或漏极的有源区域中形成用于源极和/或漏极的第一杂质区域 未形成 以及二次离子注入第二离子,其质量小于每个第一离子的质量,使得在应力区域中形成第二离子杂质区。

    Liquid discharge head and image forming apparatus
    7.
    发明授权
    Liquid discharge head and image forming apparatus 有权
    液体排出头和成像装置

    公开(公告)号:US09427968B2

    公开(公告)日:2016-08-30

    申请号:US14849869

    申请日:2015-09-10

    CPC classification number: B41J2/1433 B41J2/14274 B41J2002/14403 B41J2202/11

    Abstract: A liquid discharge head includes a nozzle plate having nozzles arrayed to discharge liquid droplets; a passage plate to form individual liquid chambers communicating with the respective nozzles; and a wall surface member to form a wall surface of the individual liquid chambers. The passage plate is formed with at least three plate-shaped members stacked and bonded by an adhesive. The nozzle plate and one plate-shaped member, and another plate-shaped member and the wall surface member are bonded, respectively. The three plate-shaped members include separation wall parts forming separation walls between the individual liquid chambers. At least one of the three plate-shaped members has a separation wall width different from that of the others, to have fillets of the forced-out adhesive formed between the wall surfaces, and surfaces of the plate-shaped members, the nozzle plate, or the wall surface member.

    Abstract translation: 液体排出头包括喷嘴板,喷嘴板具有排出液滴的喷嘴; 通道板,以形成与相应喷嘴连通的单独的液体室; 以及壁表面构件以形成各个液体室的壁表面。 通道板形成有至少三个由粘合剂堆叠和粘合的板状构件。 喷嘴板和一个板状构件以及另一个板状构件和壁面构件分别接合。 三个板状构件包括在各个液体室之间形成分隔壁的分离壁部分。 三个板状构件中的至少一个具有与其它板状构件不同的分隔壁宽度,在壁面之间形成有强制脱出粘合剂的圆角,并且板状构件,喷嘴板, 或壁表面构件。

    Inkjet head and inkjet plotter
    9.
    发明授权
    Inkjet head and inkjet plotter 有权
    喷墨头和喷墨绘图机

    公开(公告)号:US08919926B2

    公开(公告)日:2014-12-30

    申请号:US13408073

    申请日:2012-02-29

    Abstract: A disclosed inkjet head includes a liquid chamber formed by a space between a vibrating plate and a nozzle substrate and separated by partitions; a piezoelectric element formed by sequentially laminating a common electrode, a piezoelectric substance and an individual electrode over the space; first to fourth insulating films respectively having first to fourth openings; and a first wiring connected to the individual electrode and pulled through the first and second openings over the common electrode, wherein the first wiring passes through the third opening over the third insulating film, the first wiring is exposed from the fourth opening so as to be externally connected, and the third insulating film and the fourth insulating film are not partly formed above the liquid chamber and formed above the first wiring.

    Abstract translation: 所公开的喷墨头包括由振动板和喷嘴基板之间的空间形成并由分隔件分隔的液体室; 通过在该空间上依次层叠公共电极,压电体和单个电极而形成的压电元件; 分别具有第一至第四开口的第一至第四绝缘膜; 以及第一布线,其连接到所述单独电极并且在所述公共电极上被拉动通过所述第一和第二开口,其中所述第一布线穿过所述第三绝缘膜上的所述第三开口,所述第一布线从所述第四开口露出, 外部连接,并且第三绝缘膜和第四绝缘膜不部分地形成在液体室的上方并形成在第一布线的上方。

    Method for manufacturing a semiconductor device including a shallow trench isolation structure
    10.
    发明授权
    Method for manufacturing a semiconductor device including a shallow trench isolation structure 失效
    包括浅沟槽隔离结构的半导体器件的制造方法

    公开(公告)号:US07253067B2

    公开(公告)日:2007-08-07

    申请号:US11190030

    申请日:2005-07-26

    Applicant: Kanshi Abe

    Inventor: Kanshi Abe

    Abstract: A method of manufacturing a semiconductor device having a semiconductor substrate that includes an active region for forming transistor elements, which includes a gate, and an element isolation region for isolating the transistor elements separately each other, which has a STI structure, the method comprises; first—ion implanting fist ions onto the surface of the semiconductor substrate in a region other than a stress region in the active region, which is located at the interface with the element isolation region, in the stress region, a potential stress is generated by forming the element isolation region and/or the difference between a material of the element isolation region and a material of the semiconductor substrate, so that a first impurity region for a source and/or a drain is formed in the active region in which the gate is not formed; and second ion implanting second ions each of which mass is smaller than that of each of the first ions so that a second ion impurity region is formed in the stress region.

    Abstract translation: 一种具有半导体器件的半导体器件的制造方法,该半导体器件包括用于形成晶体管元件的有源区,其包括栅极,以及用于将晶体管元件彼此分离的元件隔离区域,所述元件隔离区域具有STI结构。 在位于应力区域与元件隔离区域的界面处的有源区域中的除了应力区域之外的区域中的第一离子注入第一离子到半导体衬底的表面上,通过形成 元件隔离区域和/或元件隔离区域的材料与半导体衬底的材料之间的差异,使得在栅极和/或漏极的有源区域中形成用于源极和/或漏极的第一杂质区域 未形成 并且第二离子注入第二离子,其质量小于每个第一离子的质量,使得在应力区域中形成第二离子杂质区。

Patent Agency Ranking