Abstract:
A liquid discharge head includes a plurality of nozzles arrayed in a nozzle array direction to discharge a liquid; a plurality of pressure chambers arrayed in the nozzle array direction and communicating with the plurality of nozzles, respectively; and a diaphragm forming a displaceable wall of each of the plurality of pressure chambers. The diaphragm includes a concave portion outside an arrangement region of the plurality of pressure chambers in which the plurality of pressure chambers is arrayed in the nozzle array direction.
Abstract:
A liquid discharging head includes: a nozzle plate having a plurality of nozzles from which liquid is discharged; a channel member including a plurality of individual liquid chambers that lead to the plurality of nozzles, respectively, and including a plurality of circulation channels that lead to the plurality of individual liquid chambers, respectively; and a common liquid chamber member for forming a common liquid chamber that supplies liquid to the plurality of individual liquid chambers and for forming a circulation common liquid chamber that leads to the plurality of circulation channels.
Abstract:
A liquid discharge head includes a channel plate. The channel plate includes a fluid restrictor, a channel, a first plate member, and a second plate member. The channel is disposed on at least one of an upstream side and a downstream side of the fluid restrictor in a direction of flow of liquid. The channel has a greater width than a width of the fluid restrictor in a direction perpendicular to the direction of flow of liquid in an in-plane direction. The first plate member has a through hole including at least one broad portion and a narrow portion. The narrow portion is the fluid restrictor. The second plate member includes at least one through hole constituting part of the channel with the broad portion. The through hole is disposed opposite an end of the narrow portion at which the narrow portion is connected to the broad portion.
Abstract:
An ink-jet head includes a nozzle plate having nozzles, a vibrating plate on the nozzle plate, liquid chambers formed of spaces partitioned by division walls, a piezoelectric element having a common electrode, a piezoelectric body and an individual electrode layered in this order on a surface of the vibrating plate, a first insulator film having a first opening and a second insulator film having a second opening layered in this order on the first surface, a first wire drawn from the individual electrode via the first opening and the second opening, a third insulator film having a third opening on the first wire; and a second wire drawn via the third opening, where the third insulator film is formed in a first region of the second insulator film and is not formed in a second region excluding a region including the first wire formed above the liquid chamber.
Abstract:
A method of manufacturing a semiconductor device having a semiconductor substrate that includes an active region for forming transistor elements, which includes a gate, and an element isolation region for isolating the transistor elements separately each other, which has a STI structure, the method comprises; first—ion implanting first ions onto the surface of the semiconductor substrate in a region other than a stress region in the active region, which is located at the interface with the element isolation region, in the stress region, a potential stress is generated by forming the element isolation region and/or the difference between a material of the element isolation region and a material of the semiconductor substrate, so that a first impurity region for a source and/or a drain is formed in the active region in which the gate is not formed; and second-ion implanting second ions each of which mass is smaller than that of each of the first ions so that a second ion impurity region is formed in the stress region.
Abstract:
A liquid discharge head includes a plurality of nozzles from which liquid is discharged, a plurality of individual-liquid-chambers communicating with the plurality of nozzles, respectively, a plurality of individual-drainage-channels communicating with the plurality of individual-liquid-chambers, respectively, a drainage-side common-liquid-chamber communicating with each of the plurality of individual-drainage-channels, a filter having filter holes and disposed between the plurality of individual-drainage-channels and the drainage-side common-liquid-chamber, and an intermediate-drainage-channel disposed between the filter and the plurality of individual-drainage-channels. The intermediate-drainage-channel faces the filter and communicates with two or more of the plurality of individual-drainage-channels. A cross-sectional area of the intermediate-drainage-channel is greater than a cross-sectional area of each of the plurality of individual-drainage-channels communicating with the intermediate-drainage-channel in a direction perpendicular to a direction of liquid flow.
Abstract:
A liquid discharge head includes a nozzle plate having nozzles arrayed to discharge liquid droplets; a passage plate to form individual liquid chambers communicating with the respective nozzles; and a wall surface member to form a wall surface of the individual liquid chambers. The passage plate is formed with at least three plate-shaped members stacked and bonded by an adhesive. The nozzle plate and one plate-shaped member, and another plate-shaped member and the wall surface member are bonded, respectively. The three plate-shaped members include separation wall parts forming separation walls between the individual liquid chambers. At least one of the three plate-shaped members has a separation wall width different from that of the others, to have fillets of the forced-out adhesive formed between the wall surfaces, and surfaces of the plate-shaped members, the nozzle plate, or the wall surface member.
Abstract:
An electromechanical transducer includes a first electrode mounted on one of a substrate and a base film, an electromechanical transducer film mounted on the first electrode and made of a piezoelectric substance having a perovskite crystal structure, and a second electrode mounted on the electromechanical transducer film. The electromechanical transducer film includes a {100} plane preferentially oriented to be orthogonal to a thickness direction of the electromechanical transducer film and has a full width at half maximum corresponding to a {200} plane in an X-ray diffraction measurement curve in 2θ-ω scan that is measured by emitting an X-ray beam onto a surface of the electromechanical transducer film at an incident angle θ. The full width at half maximum is not greater than 10 degrees.
Abstract:
A disclosed inkjet head includes a liquid chamber formed by a space between a vibrating plate and a nozzle substrate and separated by partitions; a piezoelectric element formed by sequentially laminating a common electrode, a piezoelectric substance and an individual electrode over the space; first to fourth insulating films respectively having first to fourth openings; and a first wiring connected to the individual electrode and pulled through the first and second openings over the common electrode, wherein the first wiring passes through the third opening over the third insulating film, the first wiring is exposed from the fourth opening so as to be externally connected, and the third insulating film and the fourth insulating film are not partly formed above the liquid chamber and formed above the first wiring.
Abstract:
A method of manufacturing a semiconductor device having a semiconductor substrate that includes an active region for forming transistor elements, which includes a gate, and an element isolation region for isolating the transistor elements separately each other, which has a STI structure, the method comprises; first—ion implanting fist ions onto the surface of the semiconductor substrate in a region other than a stress region in the active region, which is located at the interface with the element isolation region, in the stress region, a potential stress is generated by forming the element isolation region and/or the difference between a material of the element isolation region and a material of the semiconductor substrate, so that a first impurity region for a source and/or a drain is formed in the active region in which the gate is not formed; and second ion implanting second ions each of which mass is smaller than that of each of the first ions so that a second ion impurity region is formed in the stress region.