MAP DIFFERENCE DATA GENERATION APPARATUS AND MAP DIFFERENCE DATA GENERATION METHOD
    1.
    发明申请
    MAP DIFFERENCE DATA GENERATION APPARATUS AND MAP DIFFERENCE DATA GENERATION METHOD 有权
    地图差异数据生成装置和地图差异数据生成方法

    公开(公告)号:US20130031049A1

    公开(公告)日:2013-01-31

    申请号:US13557567

    申请日:2012-07-25

    IPC分类号: G06F17/30

    CPC分类号: G01C21/32 G09B29/106

    摘要: A map difference data generation apparatus includes: most recent and supplementary map data storage devices storing primary most recent and supplementary map data, respectively; a map update reflection device generating secondly most recent and supplementary map data according to an update of a first link, and generating tertiary most recent and supplementary map data according to an update of a second link; a determination device determining a dependency relationship between the update of the first and second links, in accordance with results of searching a route in the tertiary most recent and supplementary map data between first and second nodes, which are both ends of the second link; and a map difference data generation device generating map difference data, which defines a combination of the update of the first and second links, when the update of the first and second links have the dependency relationship.

    摘要翻译: 地图差分数据生成装置包括:分别存储主要最新和附加地图数据的最新和补充地图数据存储装置; 地图更新反射装置,根据第一链路的更新生成第二最新和补充地图数据,并根据第二链路的更新生成第三最新和补充地图数据; 确定装置,根据在第三最新的路由搜索的结果和作为第二链路的两端的第一和第二节点之间的补充地图数据的结果来确定第一和第二链路的更新之间的依赖关系; 以及当所述第一和第二链路的更新具有依赖关系时,生成映射差异数据的地图差分数据生成装置,所述地图差分数据定义所述第一和第二链接的更新的组合。

    Semiconductor Wafer and Semiconductor Wafer Inspection Method
    2.
    发明申请
    Semiconductor Wafer and Semiconductor Wafer Inspection Method 审中-公开
    半导体晶圆和半导体晶圆检查方法

    公开(公告)号:US20100013058A1

    公开(公告)日:2010-01-21

    申请号:US12520986

    申请日:2008-10-03

    IPC分类号: H01L23/00 G01N21/95

    摘要: Affords semiconductor wafers that achieve uniformization of semiconductor films. In a semiconductor wafer (1), between one and twenty pinholes (3) are formed per wafer for two-inch diameter semiconductor wafers (1). An effect whereby the warp in the semiconductor wafer (1) following semiconductor film formation is reduced, and dimensional variation following photolithographic exposure is reduced can thereby be obtained. This is presumed to be because dislocations in the semiconductor wafer (1) front side are extinguished by the presence of the pinholes (3). Accordingly, this can serve to make the quality of the semiconductor films consistent, make the performance of semiconductor devices consistent, and prevent fracture of the semiconductor wafer (1).

    摘要翻译: 提供实现半导体膜均匀化的半导体晶片。 在半导体晶片(1)中,对于2英寸直径的半导体晶片(1),每个晶片形成一个至二十个针孔(3)之间。 从而可以获得半导体膜形成后的半导体晶片(1)的翘曲减小,光刻曝光后的尺寸变化减小的效果。 这被认为是因为半导体晶片(1)前侧的位错由于针孔(3)的存在而熄灭。 因此,这可以使半导体膜的质量一致,使半导体器件的性能一致,并且防止半导体晶片(1)的断裂。

    IMAGING APPARATUS, IMAGING METHOD, AND IMAGING PROGRAM
    4.
    发明申请
    IMAGING APPARATUS, IMAGING METHOD, AND IMAGING PROGRAM 审中-公开
    成像设备,成像方法和成像程序

    公开(公告)号:US20110266416A1

    公开(公告)日:2011-11-03

    申请号:US13096210

    申请日:2011-04-28

    IPC分类号: H01L27/146

    CPC分类号: H04N5/349 H04N5/2254

    摘要: An imaging operation is executed by partially shielding, from incident light coming from a subject, a photodetecting element (A(m, n)) including a photodetecting surface (P(m, n)) having a prescribed area and adapted to generate output values corresponding to light quantities received by the photodetecting surface, acquiring output values from the photodetecting element in each of a plurality of states in which different portions of the photodetecting element are shielded, and calculating a pixel information corresponding to a light quantity received by a region that is smaller than the photodetecting surface of the photodetecting element based on differences between the output values acquired in the plurality of states.

    摘要翻译: 通过对来自被摄体的入射光进行部分屏蔽来执行成像操作,所述光检测元件(A(m,n))包括具有规定区域的受光面(P(m,n)),并且适于产生输出值 对应于由光检测面接收的光量,在受光元件的不同部分被屏蔽的多个状态中的每一个状态下从受光元件获取输出值,并且计算与由所述受光元件的不同部分所接收的光量接收的光量对应的像素信息, 基于在多个状态中获取的输出值之间的差异,小于光电检测元件的光电检测表面。

    Spot welding inspecting apparatus
    5.
    发明授权
    Spot welding inspecting apparatus 有权
    点焊检测仪

    公开(公告)号:US07640809B2

    公开(公告)日:2010-01-05

    申请号:US12133708

    申请日:2008-06-05

    IPC分类号: G01N9/24

    摘要: A spot welding inspecting apparatus is provided with: a gun chip; a signal transmitting part; an ultrasonic sensor; an inner cylinder; a through hole; a partitioning cylinder; a first flow path; a second flow path; and a third flow path.The inner cylinder is inserted to an outer cylinder of spot welding gun and holds the ultrasonic sensor. The through hole is provided on the inner cylinder. The partitioning cylinder surrounds the through hole and is inserted into a gap between the ultrasonic sensor and the outer cylinder. The first flow path is formed between the inner cylinder and the partitioning cylinder by passing the through hole from an inner portion of the inner cylinder. The second flow path is formed at the gun chip to be circulated around a front end of the partitioning cylinder. The third flow path is formed between the outer cylinder and the partitioning cylinder. A cooling agent flows in an order of the first flow path, the second flow path and the third flow path.

    摘要翻译: 点焊检查装置设有:枪片; 信号发送部; 超声波传感器 内筒 一个通孔; 分隔圆筒; 第一流路; 第二流路; 和第三流路。 将内筒插入到点焊枪的外筒内并保持超声波传感器。 通孔设置在内筒上。 分隔圆筒围绕通孔并插入到超声波传感器和外筒之间的间隙中。 第一流路通过从内筒的内部通过通孔而形成在内筒和分隔筒之间。 第二流路形成在喷枪芯片周围围绕分隔圆筒的前端。 第三流路形成在外筒与分隔筒之间。 冷却剂按照第一流路,第二流路和第三流路的顺序流动。

    Spot welding inspecting apparatus
    7.
    发明申请
    Spot welding inspecting apparatus 有权
    点焊检测仪

    公开(公告)号:US20090031812A1

    公开(公告)日:2009-02-05

    申请号:US12133708

    申请日:2008-06-05

    IPC分类号: G01N29/00

    摘要: A spot welding inspecting apparatus is provided with: a gun chip; a signal transmitting part; an ultrasonic sensor; an inner cylinder; a through hole; a partitioning cylinder; a first flow path; a second flow path; and a third flow path.The inner cylinder is inserted to an outer cylinder of spot welding gun and holds the ultrasonic sensor. The through hole is provided on the inner cylinder. The partitioning cylinder surrounds the through hole and is inserted into a gap between the ultrasonic sensor and the outer cylinder. The first flow path is formed between the inner cylinder and the partitioning cylinder by passing the through hole from an inner portion of the inner cylinder. The second flow path is formed at the gun chip to be circulated around a front end of the partitioning cylinder. The third flow path is formed between the outer cylinder and the partitioning cylinder. A cooling agent flows in an order of the first flow path, the second flow path and the third flow path.

    摘要翻译: 点焊检查装置设有:枪片; 信号发送部; 超声波传感器; 内筒 一个通孔; 分隔圆筒; 第一流路; 第二流路; 和第三流路。 将内筒插入到点焊枪的外筒内并保持超声波传感器。 通孔设置在内筒上。 分隔圆筒围绕通孔并插入到超声波传感器和外筒之间的间隙中。 第一流路通过从内筒的内部通过通孔而形成在内筒和分隔筒之间。 第二流路形成在喷枪芯片周围围绕分隔圆筒的前端。 第三流路形成在外筒与分隔筒之间。 冷却剂按照第一流路,第二流路和第三流路的顺序流动。

    Setting method and setting apparatus for operation path for articulated robot
    8.
    发明授权
    Setting method and setting apparatus for operation path for articulated robot 有权
    铰接式机器人操作路径的设置方法和设定装置

    公开(公告)号:US07110859B2

    公开(公告)日:2006-09-19

    申请号:US10468365

    申请日:2001-11-22

    IPC分类号: G06F19/00

    摘要: A temporary operation path is set by connecting a plurality of welding points in a virtual space generated by a computer to investigate whether an end effector can be operated along the temporary operation path. If the operation cannot be operated, a path to avoid interference with a workpiece is set automatically while extracting a portion in which the workpiece exists in the internal space surrounded by the end effector in order to set a narrow-area operation path for withdrawing the end effector from a welding point. Next, in order to set a wide-area operation path for making movement between withdrawing points, a template operation is applied, in which the end effector is moved by a prescribed distance in a prescribed direction.

    摘要翻译: 通过将由计算机生成的虚拟空间中的多个焊接点连接起来来调查末端执行器是否可以沿着临时操作路径操作来设置临时操作路径。 如果无法操作操作,则自动设置避免工件干涉的路径,同时在由端部执行器包围的内部空间中提取工件的部分提取部分,以便设置用于取出端部的窄区域操作路径 效应器从焊接点。 接下来,为了设定用于在抽出点之间移动的广域操作路径,应用模板操作,其中端部执行器沿规定方向移动规定距离。

    Map difference data generation apparatus and map difference data generation method
    9.
    发明授权
    Map difference data generation apparatus and map difference data generation method 有权
    地图差异数据生成装置和地图差异数据生成方法

    公开(公告)号:US08560573B2

    公开(公告)日:2013-10-15

    申请号:US13557567

    申请日:2012-07-25

    IPC分类号: G06F17/30

    CPC分类号: G01C21/32 G09B29/106

    摘要: A map difference data generation apparatus includes: most recent and supplementary map data storage devices storing primary most recent and supplementary map data, respectively; a map update reflection device generating secondly most recent and supplementary map data according to an update of a first link, and generating tertiary most recent and supplementary map data according to an update of a second link; a determination device determining a dependency relationship between the update of the first and second links, in accordance with results of searching a route in the tertiary most recent and supplementary map data between first and second nodes, which are both ends of the second link; and a map difference data generation device generating map difference data, which defines a combination of the update of the first and second links, when the update of the first and second links have the dependency relationship.

    摘要翻译: 地图差分数据生成装置包括:分别存储主要最新和附加地图数据的最新和补充地图数据存储装置; 地图更新反射装置,根据第一链路的更新生成第二最新和补充地图数据,并根据第二链路的更新生成第三最新和补充地图数据; 确定装置,根据在第三最新的路由搜索的结果和作为第二链路的两端的第一和第二节点之间的补充地图数据的结果来确定第一和第二链路的更新之间的依赖关系; 以及当所述第一和第二链路的更新具有依赖关系时,生成映射差异数据的地图差分数据生成装置,所述地图差分数据定义所述第一和第二链接的更新的组合。

    PROCESSING METHOD AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    PROCESSING METHOD AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的处理方法和制造方法

    公开(公告)号:US20110236175A1

    公开(公告)日:2011-09-29

    申请号:US12671958

    申请日:2008-12-12

    IPC分类号: H01L21/677 F17D1/16

    摘要: There are obtained a processing method that allows adherence of foreign particles to an object to be processed in a load lock chamber to be suppressed, and a fabrication method of a semiconductor device using the processing method. The processing method includes the step of receiving a substrate that is the object to be processed at a load lock chamber (substrate load lock chamber) to load the substrate into a processing chamber where processing is to be applied to the substrate, and reducing internal pressure from a substrate load lock chamber 3. In the step of reducing internal pressure, pressure is released at a relatively low decompression rate, and then at a relatively high decompression rate.

    摘要翻译: 可以获得能够抑制在负载锁定室中使异物附着到被处理物的处理方法,以及使用该处理方法的半导体装置的制造方法。 处理方法包括以下步骤:在负载锁定室(基板负载锁定室)处接收作为待处理对象的基板,以将基板装载到处理室中,在该处理室中对基板施加处理,并且降低内部压力 在降低内部压力的步骤中,以相对较低的减压速率释放压力,然后以较高的减压速率释放压力。