公开(公告)号：US5668033A

公开(公告)日：1997-09-16

申请号：US648968

申请日：1996-05-17

申请人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

发明人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

IPC分类号： H01L29/84 ,  B29C43/36 ,  B81C1/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/12 ,  H01L21/301 ,  H01L21/822 ,  H01L23/053 ,  H01L23/10 ,  H01L27/04 ,  H01L21/304

CPC分类号： B29C43/36 ,  B81C1/00301 ,  B81C1/00865 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/124 ,  H01L23/053 ,  H01L23/10 ,  B29C2043/023 ,  B29C33/0022 ,  B81B2207/093 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S148/012

摘要： On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.

摘要翻译： 在硅晶片上形成可移动栅极MOS晶体管（感测元件：功能元件）。 由硅薄膜构成的接合框架围绕硅晶片的表面上的元件形成区域进行图案化。 在形成硅晶片的盖上，在底面上突出设置有腿部，形成由金膜构成的接合层。 盖形成硅晶片设置在硅晶片上，于是相对于其加热在高于金/硅共晶温度的温度下进行，从而使硅晶片的接合框架和接合层之间的粘结 盖形成硅晶片。 此后，两片晶片以芯片单元切割。