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公开(公告)号：US5520771A
公开(公告)日：1996-05-28
申请号：US443437
申请日：1995-05-18
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238 , H01J37/32266
摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc.According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.
摘要翻译： 本发明涉及一种微波等离子体处理方法和装置。 更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于 样品，例如半导体器件衬底，蚀刻工艺，成膜工艺等。根据本发明，微波仅与其行进方向相对应地被引入放电装置，从而使等离子体密度 可以大大提高与样品表面对应的分布，使得利用这种等离子体处理的样品能够在待处理的表面内获得增强的加工均匀性。
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公开(公告)号：US4718681A
公开(公告)日：1988-01-12
申请号：US768332
申请日：1985-08-22
申请人： Yutaka Kakehi , Ryokichi Kaji , Hideki Izumi , Toshiaki Makino , Kazuaki Ichihashi , Sosuke Kawashima
发明人： Yutaka Kakehi , Ryokichi Kaji , Hideki Izumi , Toshiaki Makino , Kazuaki Ichihashi , Sosuke Kawashima
IPC分类号： H01L21/66 , B25B5/06 , H01L21/68 , H01L21/687 , B23B31/18
CPC分类号： H01L21/68721 , B25B5/06 , Y10T279/18
摘要： A sample chucking apparatus including a clip provided at a plurality of positions correspondingly to a sample and operating closedly to release and hold the sample, with the clip being acutated by a magnetic force. A spring force counters the direction in which the clip operates, thereby simplifying the structure and ensuring a reliability on fixing or carrying of the sample.
摘要翻译： 一种样品夹持装置，包括夹子，其设置在与样品相对应的多个位置处，并且闭合地操作以释放和保持样品，夹子被磁力冲击。 弹簧力与夹子的操作方向相反，从而简化了结构，确保了固定或携带样品的可靠性。
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公开(公告)号：US5259735A
公开(公告)日：1993-11-09
申请号：US873175
申请日：1992-04-24
IPC分类号： B01D19/00 , B01D8/00 , B01J3/00 , B01J3/02 , B01L7/00 , B01L99/00 , C23C14/54 , C23C14/56 , F04B23/14 , F04B37/08
CPC分类号： C23C14/564 , B01D8/00 , B01J3/006 , Y10S417/901
摘要： An evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system. A main pump, composed of a turbo-molecular pump and a baffle is positioned upstream of a main pump and cooled to a temperature in which argon gas is not absorbed and only water is absorbed. The pump and a vacuum chamber are separated by a valve. A pipeline circulates a heating medium to rapidly heat and cool the vacuum chamber for enabling a gas discharge from the vacuum chamber whereby the pumping time can be reduced and the overall production of the system can be increased.
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公开(公告)号：US4699554A
公开(公告)日：1987-10-13
申请号：US773296
申请日：1985-09-06
CPC分类号： C23C14/56 , Y10S414/135 , Y10S414/138 , Y10S414/139
摘要： This invention is directed to a vacuum processing apparatus which is constructed so that a sample may be carried between a main vacuum chamber and a portion of the atmosphere outside the main vacuum chamber while the sample is retained in a vertical position. The sample is carried in the vertical position through several chambers, including a first vacuum preparatory chamber provided to be communicable with the main vacuum chamber and a second vacuum preparatory chamber provided to be communicable with both the first vacuum preparatory chamber and the atmosphere. By using this apparatus, and in particular by conveying the sample in a vertical position, it is possible to restrain the adhesion of foreign substances on the sample surface which is to be treated. It is also possible to reduce the vacuum load and properly maintain pressure within the main vacuum chamber, thereby enabling increased quality of treatment and also enhancing the manufacturing yield of a semiconductor element.
摘要翻译： 本发明涉及一种真空处理装置，该真空处理装置构造成使得样品可以在主真空室和主真空室外部的大气的一部分之间承载，同时样品保持在垂直位置。 样品通过几个室沿垂直位置运送，包括设置成可与主真空室连通的第一真空准备室和设置成可与第一真空预备室和大气连通的第二真空准备室。 通过使用该装置，特别是通过在垂直位置输送样品，可以抑制异物粘附在待处理的样品表面上。 也可以减小真空负荷并适当地保持主真空室内的压力，从而能够提高处理质量并且还提高半导体元件的制造成品率。
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公开(公告)号：US5914051A
公开(公告)日：1999-06-22
申请号：US443438
申请日：1995-05-18
IPC分类号： H01J37/32 , H01L21/302 , B65D6/34 , C23F1/02
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238 , H01J37/32266
摘要： A microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed. The temperature of the electric discharge block is controlled to decrease an amount of plasma polymers deposited on the electric discharge block, increase an amount existing in the plasma and increase an amount deposited on the sample to improve a selection ratio.
摘要翻译： 一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于对诸如半导体装置 基板，蚀刻工艺，成膜工艺等。微波仅与其行进方向相对应地被引入放电装置，由此等离子体密度分布的均匀性对应于待处理的表面 样品可以急剧增强，使得通过利用这种等离子体处理的样品可以在待处理的表面内获得增强的处理均匀性。 控制放电块的温度以减少沉积在放电块上的等离子聚合物的量，增加存在于等离子体中的量并增加沉积在样品上的量以提高选择比。
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公开(公告)号：US5804033A
公开(公告)日：1998-09-08
申请号：US29241
申请日：1993-03-10
申请人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata , Muneo Furuse , Tetsunori Kaji
发明人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata , Muneo Furuse , Tetsunori Kaji
IPC分类号： H01L21/205 , H01L21/302 , H01L21/31
CPC分类号： H01J37/32229 , H01J37/32238 , H01J37/32266
摘要： The present invention relates to a microwave plasma processing method and apparatus. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to be processed. In addition, homogeneity and stability of the plasma are improved by inserting a cavity resonator between the microwave generator and plasma processing (plasma generating) chamber, and coupling the cavity resonator and plasma processing chamber such that microwaves substantially only of a desired mode (e.g., TE.sub.11) pass into the plasma processing chamber. Such coupling to provide microwaves substantially only of circular TE.sub.11 mode can be achieved by providing the coupling such that a ratio of diameter of the discharge block, where the plasma is generated, to the diameter of the cavity resonator, is 0.345.
摘要翻译： 本发明涉及一种微波等离子体处理方法和装置。 根据本发明，微波仅与其行进方向相对应地被引入到放电装置中，从而可以显着提高对应于样品待处理表面的等离子体密度分布的均匀性，使得 通过利用这种等离子体处理的样品可以在被处理表面内获得增强的处理均匀性。 此外，通过在微波发生器和等离子体处理（等离子体产生）室之间插入空腔谐振器，并耦合空腔谐振器和等离子体处理室，使得微波基本上仅仅是期望的模式（例如， TE11）进入等离子体处理室。 通过提供耦合使得产生等离子体的放电块的直径与腔谐振器的直径的比率为0.345，可以实现基本上仅提供圆形TE11模式的微波的这种耦合。
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公开(公告)号：US5785807A
公开(公告)日：1998-07-28
申请号：US765834
申请日：1991-09-26
IPC分类号： H01J37/32 , H01L21/302
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238 , H01J37/32266
摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.
摘要翻译： 本发明涉及一种微波等离子体处理方法和装置。 更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于 样品，例如半导体器件衬底，蚀刻工艺，成膜工艺等。根据本发明，微波仅与其行进方向相对应地被引入放电装置，从而使等离子体密度 可以大大提高与样品表面对应的分布，使得利用这种等离子体处理的样品能够在待处理的表面内获得增强的加工均匀性。
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公开(公告)号：US4203841A
公开(公告)日：1980-05-20
申请号：US857890
申请日：1977-12-06
申请人： Norio Shimizu , Youji Odawara , Tetsuo Yamaguchi , Setsuo Saitou , Azuma Nakaoka , Kazuaki Ichihashi
发明人： Norio Shimizu , Youji Odawara , Tetsuo Yamaguchi , Setsuo Saitou , Azuma Nakaoka , Kazuaki Ichihashi
摘要： Waste water containing organic materials is introduced into an aeration tank, and is subjected to aeration treatment in the presence of activated sludge, while supplying oxygen to the aeration tank. The tank provided with an air diffusion pipe at the bottom of the tank, an air dispersion device above the air diffusion pipe and a plurality of inside cylinders above the air dispersion device. An overall circulating stream and partial circulating streams are generated in the aeration tank.
摘要翻译： 将含有机材料的废水引入曝气池中，并在活性污泥存在下进行曝气处理，同时向曝气池供氧。 该罐在罐的底部设置有空气扩散管，空气扩散管上方的空气分散装置和空气分散装置上方的多个内筒。 在曝气池中产生总体循环流和部分循环流。
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公开(公告)号：US4810473A
公开(公告)日：1989-03-07
申请号：US127622
申请日：1987-11-30
IPC分类号： H01L21/203 , C30B23/00 , C30B23/02 , C30B35/00 , H01L21/677
CPC分类号： H01L21/67766 , C30B23/02 , C30B35/005 , H01L21/67742 , H01L21/67745
摘要： In a molecular beam epitaxy apparatus in accordance with the present invention, transfer means for transferring substrates, which have been transferred from an introduction chamber, to a growth chamber and for transferring the substrates after the growth of a film, which have been transferred from the growth chamber, to a discharge chamber consists of a rotary disc which supports thereon a plurality of substrates and transfers them to the growth chamber and then to the discharge chamber, and all of the introduction chamber, the growth chamber and the discharge chamber are disposed at predetermined positions, respectively, so that the molecular beam crystal growth can be effected in a clean room which is separated from a maintenance room.
摘要翻译： 在根据本发明的分子束外延装置中，用于将已经从导入室转移的基板转移到生长室并在膜生长之后转移基板的转印装置 生长室到排出室由支撑在其上的多个基板的旋转盘组成，并将它们传送到生长室，然后传送到排出室，并且所有的引入室，生长室和排出室都设置在 分子束晶体生长可以在与维护室分离的洁净室中进行。
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