公开(公告)号：US5804033A

公开(公告)日：1998-09-08

申请号：US29241

申请日：1993-03-10

申请人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata ,  Muneo Furuse ,  Tetsunori Kaji

发明人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata ,  Muneo Furuse ,  Tetsunori Kaji

IPC分类号： H01L21/205 ,  H01L21/302 ,  H01L21/31

CPC分类号： H01J37/32229 ,  H01J37/32238 ,  H01J37/32266

摘要： The present invention relates to a microwave plasma processing method and apparatus. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to be processed. In addition, homogeneity and stability of the plasma are improved by inserting a cavity resonator between the microwave generator and plasma processing (plasma generating) chamber, and coupling the cavity resonator and plasma processing chamber such that microwaves substantially only of a desired mode (e.g., TE.sub.11) pass into the plasma processing chamber. Such coupling to provide microwaves substantially only of circular TE.sub.11 mode can be achieved by providing the coupling such that a ratio of diameter of the discharge block, where the plasma is generated, to the diameter of the cavity resonator, is 0.345.

摘要翻译： 本发明涉及一种微波等离子体处理方法和装置。 根据本发明，微波仅与其行进方向相对应地被引入到放电装置中，从而可以显着提高对应于样品待处理表面的等离子体密度分布的均匀性，使得 通过利用这种等离子体处理的样品可以在被处理表面内获得增强的处理均匀性。 此外，通过在微波发生器和等离子体处理（等离子体产生）室之间插入空腔谐振器，并耦合空腔谐振器和等离子体处理室，使得微波基本上仅仅是期望的模式（例如， TE11）进入等离子体处理室。 通过提供耦合使得产生等离子体的放电块的直径与腔谐振器的直径的比率为0.345，可以实现基本上仅提供圆形TE11模式的微波的这种耦合。

公开(公告)号：US5520771A

公开(公告)日：1996-05-28

申请号：US443437

申请日：1995-05-18

申请人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

发明人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

IPC分类号： H01J37/32 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc.According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.

摘要翻译： 本发明涉及一种微波等离子体处理方法和装置。 更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于 样品，例如半导体器件衬底，蚀刻工艺，成膜工艺等。根据本发明，微波仅与其行进方向相对应地被引入放电装置，从而使等离子体密度 可以大大提高与样品表面对应的分布，使得利用这种等离子体处理的样品能够在待处理的表面内获得增强的加工均匀性。

公开(公告)号：US5914051A

公开(公告)日：1999-06-22

申请号：US443438

申请日：1995-05-18

申请人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

发明人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

IPC分类号： H01J37/32 ,  H01L21/302 ,  B65D6/34 ,  C23F1/02

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

摘要： A microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed. The temperature of the electric discharge block is controlled to decrease an amount of plasma polymers deposited on the electric discharge block, increase an amount existing in the plasma and increase an amount deposited on the sample to improve a selection ratio.

摘要翻译： 一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于对诸如半导体装置 基板，蚀刻工艺，成膜工艺等。微波仅与其行进方向相对应地被引入放电装置，由此等离子体密度分布的均匀性对应于待处理的表面 样品可以急剧增强，使得通过利用这种等离子体处理的样品可以在待处理的表面内获得增强的处理均匀性。 控制放电块的温度以减少沉积在放电块上的等离子聚合物的量，增加存在于等离子体中的量并增加沉积在样品上的量以提高选择比。

公开(公告)号：US5785807A

公开(公告)日：1998-07-28

申请号：US765834

申请日：1991-09-26

申请人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

发明人： Saburo Kanai ,  Yoshinao Kawasaki ,  Kazuaki Ichihashi ,  Seiichi Watanabe ,  Makoto Nawata

IPC分类号： H01J37/32 ,  H01L21/302

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.

摘要翻译： 本发明涉及一种微波等离子体处理方法和装置。 更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于 样品，例如半导体器件衬底，蚀刻工艺，成膜工艺等。根据本发明，微波仅与其行进方向相对应地被引入放电装置，从而使等离子体密度 可以大大提高与样品表面对应的分布，使得利用这种等离子体处理的样品能够在待处理的表面内获得增强的加工均匀性。

公开(公告)号：US5276386A

公开(公告)日：1994-01-04

申请号：US669512

申请日：1991-03-14

申请人： Seiichi Watanabe ,  Makoto Nawata ,  Ryooji Fukuyama ,  Yutaka Kakehi ,  Saburo Kanai ,  Yoshinao Kawasaki

发明人： Seiichi Watanabe ,  Makoto Nawata ,  Ryooji Fukuyama ,  Yutaka Kakehi ,  Saburo Kanai ,  Yoshinao Kawasaki

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32266 ,  H01J37/32192

摘要： In a microwave plasma generating method and apparatus according to the present invention, a slow wave structure is disposed in the propagation region of microwaves, and the microwaves are introduced at a delayed phase velocity into a discharge chamber so that treating gases are transformed into plasma. Thus, the phase velocity of the microwaves is adjusted to a relatively low velocity, at which charged particles are distributed most densely in the plasma, so that the energy may be efficiently transformed to many more charged particles in the plasma. Thus, the plasma of high density is generated to improve a plasma treating rate.

摘要翻译： 在根据本发明的微波等离子体产生方法和装置中，在微波的传播区域中设置慢波结构，并且将微波以延迟的相速度引入放电室，从而将处理气体转化为等离子体。 因此，微波的相速度被调节到相对较低的速度，在该速度下，带电粒子最密集地分布在等离子体中，使得能量可以有效地转换成等离子体中的更多带电粒子。 因此，产生高密度的等离子体以提高等离子体处理速率。

公开(公告)号：US4971651A

公开(公告)日：1990-11-20

申请号：US475266

申请日：1990-02-05

申请人： Seiichi Watanabe ,  Makoto Nawata ,  Ryooji Fukuyama ,  Yutaka Kakehi ,  Saburo Kanai ,  Keiji Ueyama

发明人： Seiichi Watanabe ,  Makoto Nawata ,  Ryooji Fukuyama ,  Yutaka Kakehi ,  Saburo Kanai ,  Keiji Ueyama

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32275

摘要： This invention relates to a microwave plasma processing method and apparatus.An electromagnetic field intensity distribution of a microwave, which is incident into a plasma generation chamber and is again incident due to irregular reflection, is made uniform by uniforming means fixed inside a waveguide, a processing gas is converted to plasma by use of the microwave having the uniformed electromagnetic field intensity distribution, and a sample is plasma-processed by the resulting plasma. Accordingly, the electro-magnetic field of the microwave, which is incident, and is again incident, into the plasma generation region and locally increases a plasma density, is absorbed, attenuated or diffused by the uniforming means so that the distribution of the plasma density is made uniform and uniform processing can be effected.

摘要翻译： 本发明涉及微波等离子体处理方法和装置。 入射到等离子体产生室中并且由于不规则反射再次入射的微波的电磁场强度分布通过固定在波导内部的均匀装置而被均匀化，处理气体通过使用具有 均匀的电磁场强度分布和样品由所得等离子体进行等离子体处理。 因此，入射并再次入射到等离子体产生区域中并局部增加等离子体密度的微波的电磁场被均匀化装置吸收，衰减或扩散，使得等离子体密度的分布 制成均匀且均匀的加工。

公开(公告)号：US20100192857A1

公开(公告)日：2010-08-05

申请号：US12392127

申请日：2009-02-25

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Makoto Nawata

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Makoto Nawata

IPC分类号： C23C16/50

CPC分类号： C23C16/4412

摘要： A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.

摘要翻译： 真空处理装置包括具有形成在排气系统的压力调节阀和涡轮分子泵之间的中心的气体通道的部件和具有多个静止叶片的颗粒分散防止单元，所述多个固定叶片形成为沿相反方向倾斜 涡轮分子泵的旋转叶片在构件的外周上的方向。

公开(公告)号：US06329298B1

公开(公告)日：2001-12-11

申请号：US08986643

申请日：1997-12-08

申请人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

发明人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

IPC分类号： H01L213065

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

摘要翻译： 一种对含铝布线膜赋予高耐腐蚀性能的蚀刻后处理方法。 使用卤素型气体蚀刻的含铝布线材料样品用具有氧成分的气体的等离子体进行处理，并且在含铝布线材料上形成的抗蚀剂与氧气反应并除去。 此外，使用具有氢成分的气体产生等离子体，或者该气体在样品表面液化成液滴，使得卤素成分（Cl，Br等）通过蚀刻处理粘附到含铝布线材料 与氢反应，并有效地以氯化氢（HCl）或溴化氢（HBr）的形式除去。 这使得可以获得具有高防蚀性能的含铝布线材料。

公开(公告)号：US06328845B1

公开(公告)日：2001-12-11

申请号：US08214766

申请日：1994-03-18

申请人： Yutaka Ohmoto ,  Ryooji Fukuyama ,  Makoto Nawata

发明人： Yutaka Ohmoto ,  Ryooji Fukuyama ,  Makoto Nawata

IPC分类号： H01L213065

CPC分类号： H01J37/32192 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/3065

摘要： A plasma-etching apparatus is capable of etching a film of a workpiece with a plasma produced in an evacuated etching chamber at a high etch selectivity relative to an underlying film or a resist film. The frequency of a RF bias voltage applied to a sample table by a RF power source is adjusted so that the ion energy of the plasma is distributed in a saddle-peak energy distribution pattern. The film is etched at a high etch selectivity relative to a material having a threshold ion energy.

摘要翻译： 等离子体蚀刻装置能够以相对于下面的膜或抗蚀剂膜的高蚀刻选择性在真空蚀刻室中产生的等离子体来蚀刻工件的膜。 调整由RF电源施加到样品台的RF偏置电压的频率，使得等离子体的离子能量以鞍峰能量分布图案分布。 相对于具有阈值离子能的材料，以高蚀刻选择性蚀刻该膜。

公开(公告)号：US5770100A

公开(公告)日：1998-06-23

申请号：US662142

申请日：1996-06-12

申请人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

发明人： Ryooji Fukuyama ,  Makoto Nawata ,  Yutaka Kakehi ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Yoshimi Torii ,  Akira Kawaraya ,  Yoshie Sato

IPC分类号： C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.