摘要:
A composition for forming an intermediate layer is provided, having improved etching resistance and prevention of reflection of short-wavelength light (ability to absorb short-wavelength light). The composition for forming an intermediate layer (hard mask) is constituted to include at least (A) a silylphenylene-based polymer having a repeating unit represented by the following general formula (1), and (B) a solvent. In the formula, R1 and R2 are each independently hydrogen or an alkyl group having 1 to 20 carbon atoms; and m and n are integers representing the number of repeating units.
摘要:
A composition includes (A) an alkali-soluble resin; and (B) (b-1) a compound of Formula (I): wherein Ds are each a hydrogen atom or a naphthoquinonediazidosulfonyl group; and (b2) a quinonediazide ester of, for example, bis(2-methyl-4-hydroxy-5-cyclohexylphenyl)-3,4-dihydroxyphenylmethane.
摘要:
Disclosed is, for example, bis(2,5-dimethyl-3-(2-hydroxy-5-ethylbenzyl)-4-hydroxyphenyl)methane and quinonediazide ester thereof. These are used for positive photoresist compositions. According to the invention, positive photoresist compositions having a high definition, a high sensitivity and a large exposure margin can be provided.
摘要:
A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.
摘要:
A positive resist composition includes a resin (A) that increases alkali solubility due to action of an acid, wherein the resin comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene, and a second structural unit (a2) derived from a (meth)acrylate with an alcoholic hydroxyl group, and a weight average molecular weight of the copolymer is within a range from 2000 to 8500, and 10 mol % to 25 mol % of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups, an acid generator (B) that generates an acid on exposure to light, and polypropylene glycol (C).
摘要:
A positive resist composition capable of improving the occurrence of standing waves on the side walls of a resist pattern, and a method of forming a resist pattern that uses such a positive resist composition. The positive resist composition comprises a resin component (A) that displays improved alkali solubility under the action of acid, and a photoacid generator component (B) that generates acid on exposure, wherein the component (A) comprises a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) derived from a (meth)acrylate ester represented by a general formula (I) shown below, and the component (B) comprises a diazomethane based photoacid generator as the primary component.
摘要:
A positive resist composition includes a resin (A) that increases alkali solubility due to action of an acid, wherein the resin comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene, and a second structural unit (a2) derived from a (meth)acrylate with an alcoholic hydroxyl group, and a weight average molecular weight of the copolymer is within a range from 2000 to 8500, and 10 mol % to 25 mol % of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups, an acid generator (B) that generates an acid on exposure to light, and polypropylene glycol (C).
摘要:
(i) As a primary reaction, m-cresol is allowed to react with propionaldehyde in the presence of an acid catalyst and thereby yields a polymer having a weight average molecular weight Mw of 200 to 500 and a molecular weight distribution Mw/Mn of 1.7 or less, and (ii) as a secondary reaction, the polymer is allowed to react with 3,4-xylenol and formaldehyde and thereby yields a novolak resin having an Mw of 1000 to 20000. By adding a specific photosensitizer, the novolak resin yields a positive photoresist composition.
摘要:
A composition includes (A) an alkali-soluble resin; and (B) (b-1) a compound of Formula (I): wherein Ds are each a hydrogen atom or a naphthoquinonediazidosulfonyl group; and (b2) a quinonediazide ester of, for example, methyl gallate.
摘要:
A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.