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公开(公告)号：US08426115B2
公开(公告)日：2013-04-23
申请号：US12849344
申请日：2010-08-03
CPC分类号： G03F7/004 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译： 通过将包含含内含重复单元，含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜，形成图案形成图案 曝光，PEB和显影以形成第一抗蚀剂图案，将第一抗蚀剂图案加热至酸失活，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上 以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。
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公开(公告)号：US20130052587A1
公开(公告)日：2013-02-28
申请号：US13586186
申请日：2012-08-15
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/325
摘要： A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
摘要翻译： 通过将包含羟甲基取代的脲，酰胺或氨基甲酸酯化合物的抗蚀剂组合物，包含酸不稳定基取代的羟基的重复单元的聚合物和酸产生剂涂覆在基材上，预烘烤，暴露于高 能量辐射，并在有机溶剂显影剂中显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 在通过有机溶剂显影的正/负反转的图像形成中，抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。
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公开(公告)号：US08105760B2
公开(公告)日：2012-01-31
申请号：US12195787
申请日：2008-08-21
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , C09D133/066 , G03F7/40 , H01L21/0337
摘要： A pattern is formed by applying a first positive resist composition comprising a polymer comprising recurring units which become alkali soluble under the action of acid onto a substrate to form a first resist coating, heat treating, exposing, heat treating, developing to form a first resist pattern, applying a pattern surface coating composition comprising a hydroxyl-containing crosslinkable polymer onto the first resist pattern and crosslinking, thereby covering the first resist pattern with a crosslinked polymer film, applying a second positive resist composition thereon, heat treating, exposing, heat treating, and developing to form a second resist pattern.
摘要翻译： 通过在第一抗蚀剂涂层上涂覆第一正性抗蚀剂组合物，形成第一抗蚀剂组合物，形成第一抗蚀剂涂层，热处理，曝光，热处理，显影以形成第一抗蚀剂，形成包含聚合物的第一正性抗蚀剂组合物， 将包含含羟基的可交联聚合物的图案表面涂料组合物施加到第一抗蚀剂图案上并进行交联，从而用交联聚合物膜覆盖第一抗蚀剂图案，在其上施加第二正性抗蚀剂组合物，热处理，曝光，热处理 并且显影以形成第二抗蚀剂图案。
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公开(公告)号：US08101341B2
公开(公告)日：2012-01-24
申请号：US12686754
申请日：2010-01-13
申请人： Jun Hatakeyama , Kazuhiro Katayama
发明人： Jun Hatakeyama , Kazuhiro Katayama
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, forming a space pattern, and shrinking the space pattern.
摘要翻译： 通过将包含含酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大的正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射PEB， 显影以形成阳性图案，照亮或加热阳性图案以消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，形成空间图案和收缩空间图案。
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公开(公告)号：US20120009527A1
公开(公告)日：2012-01-12
申请号：US13177297
申请日：2011-07-06
申请人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
发明人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
IPC分类号： G03F7/20
CPC分类号： G03F7/0397 , G03F7/2041
摘要： A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group and recurring units having an acid labile group-substituted carboxyl group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, PEB, and developing the exposed film two times with an organic solvent and an alkaline aqueous solution. Due to the two developments, one line is divided into two lines, achieving a resolution doubling the mask pattern.
摘要翻译： 通过将包含含有酸不稳定基取代的羟基的重复单元的聚合物和具有酸不稳定基取代的羧基的重复单元，酸产生剂和有机溶剂的抗蚀剂组合物涂布在基材上，预烘烤 形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB，并用有机溶剂和碱性水溶液将曝光的膜显影两次。 由于两个发展，一条线分为两条线，实现了掩模图案加倍的分辨率。
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公开(公告)号：US20100055621A1
公开(公告)日：2010-03-04
申请号：US12458884
申请日：2009-07-27
申请人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号： G03F7/20
CPC分类号： H01L21/0332 , H01L21/0275 , H01L21/0337
摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译： 公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度 并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。 可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。
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公开(公告)号：US08741554B2
公开(公告)日：2014-06-03
申请号：US12787823
申请日：2010-05-26
CPC分类号： G03F7/70466 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/38 , G03F7/40 , Y10S430/108 , Y10S430/111
摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译： 通过将包含基础树脂，光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂图案，形成图案，加热 第一抗蚀剂图案，用于使基底发生器产生用于使图案失去酸的碱，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案 抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。
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公开(公告)号：US08703408B2
公开(公告)日：2014-04-22
申请号：US13177297
申请日：2011-07-06
申请人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
发明人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
IPC分类号： G03F7/26
CPC分类号： G03F7/0397 , G03F7/2041
摘要： A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group and recurring units having an acid labile group-substituted carboxyl group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, PEB, and developing the exposed film two times with an organic solvent and an alkaline aqueous solution. Due to the two developments, one line is divided into two lines, achieving a resolution doubling the mask pattern.
摘要翻译： 通过将包含含有酸不稳定基取代的羟基的重复单元的聚合物和具有酸不稳定基取代的羧基的重复单元，酸产生剂和有机溶剂的抗蚀剂组合物涂布在基材上，预烘烤 形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB，并用有机溶剂和碱性水溶液将曝光的膜显影两次。 由于两个发展，一条线分为两条线，实现了掩模图案加倍的分辨率。
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公开(公告)号：US08617800B2
公开(公告)日：2013-12-31
申请号：US12458884
申请日：2009-07-27
申请人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号： G03F7/26
CPC分类号： H01L21/0332 , H01L21/0275 , H01L21/0337
摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译： 公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度 并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。 可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。
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公开(公告)号：US08507173B2
公开(公告)日：2013-08-13
申请号：US12633423
申请日：2009-12-08
申请人： Jun Hatakeyama , Kazuhiro Katayama
发明人： Jun Hatakeyama , Kazuhiro Katayama
CPC分类号： G03F7/2041 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of 200-320 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译： 通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过200-320nm波长的高能辐射的照射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。
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