公开(公告)号：US20070190746A1

公开(公告)日：2007-08-16

申请号：US11690395

申请日：2007-03-23

申请人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

发明人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L22/12 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/31056 ,  H01L21/31654 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76254 ,  H01L21/76259 ,  H01L22/20

摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

摘要翻译： 首先制备具有厚SOI层的SOI衬底。 然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。 这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。 通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。 当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

公开(公告)号：US07256104B2

公开(公告)日：2007-08-14

申请号：US10841621

申请日：2004-05-10

申请人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

发明人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L22/12 ,  H01L21/30604 ,  H01L21/31056 ,  H01L21/31654 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76254 ,  H01L21/76259 ,  H01L22/20

摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

摘要翻译： 首先制备具有厚SOI层的SOI衬底。 然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。 这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。 通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。 当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

公开(公告)号：US06969304B2

公开(公告)日：2005-11-29

申请号：US10344660

申请日：2001-08-07

申请人： Kazuhito Takanashi ,  Kiyoshi Suzuki ,  Yoshinori Watanabe

发明人： Kazuhito Takanashi ,  Kiyoshi Suzuki ,  Yoshinori Watanabe

IPC分类号： B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  B24D13/12 ,  B24D13/14 ,  H01L21/304 ,  H01L21/306 ,  B24B1/00

CPC分类号： H01L21/02024 ,  B24B37/22 ,  B24B37/24

摘要： There is provided a method for polishing a semiconductor wafer, in which by using a specific polishing cloth as one for use in a mirror polishing step for the semiconductor wafer, especially in a final polishing stage thereof, generation of micro-scratches and blind scratches on a wafer surface is prevented. In a polishing step of mirror polishing the semiconductor wafer using a polishing cloth, the polishing is performed using the polishing cloth with a nap layer of 500 μm or more in thickness.

摘要翻译： 提供了一种用于抛光半导体晶片的方法，其中通过使用用于半导体晶片的镜面抛光步骤中的特定抛光布，特别是在其最终抛光阶段，产生微划痕和盲目划痕 防止晶片表面。 在使用研磨布对半导体晶片进行镜面抛光的抛光工序中，使用500μm以上的薄层的研磨布进行研磨。