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65 条记录 (耗时 0.034 秒)

    Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method
    4.
    发明授权
    Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method 失效
    基板处理装置，基板支撑装置，基板处理方法以及基板的制造方法

    公开(公告)号：US06706618B2

    公开(公告)日：2004-03-16

    申请号：US10206214

    申请日：2002-07-29

    申请人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

    发明人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

    IPC分类号： H01L2176

    CPC分类号： H01L21/67092 ,  H01L21/2007

    摘要： The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.

    摘要翻译： 吸盘槽3a和3b中的空间被抽真空以将晶片1的整个表面吸附到晶片支撑台3的卡盘表面并使晶片1弯曲。晶片2与晶片1水平相对， 晶片2被压销6a按压。 两个晶片1和2的中心接触，并且接触部分逐渐扩展到中心部分3c的周边附近并呈现大致圆形。 之后，由卡盘槽3a卡住停止。 因此，晶片1变平，晶片1和2的整个表面接触。

    Method for production of SOI substrate by pasting and SOI substrate
    5.
    发明授权
    Method for production of SOI substrate by pasting and SOI substrate 失效
    通过粘贴和SOI衬底生产SOI衬底的方法

    公开(公告)号：US6156624A

    公开(公告)日：2000-12-05

    申请号：US832859

    申请日：1997-04-04

    申请人： Kenji Yamagata ,  Takao Yonehara ,  Tadashi Atoji ,  Kiyofumi Sakaguchi

    发明人： Kenji Yamagata ,  Takao Yonehara ,  Tadashi Atoji ,  Kiyofumi Sakaguchi

    IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L21/306

    CPC分类号： H01L21/2007 ,  H01L21/76251 ,  Y10S438/977

    摘要： This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO.sub.2 surface and a second substrate possessing a Si surface on the SiO.sub.2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate, thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.

    摘要翻译： 本发明解决了在其周边部分产生空隙的粘贴SOI衬底的问题，从而减少了从其导出的器件的数量。 本发明涉及制备通过在SiO 2表面和Si表面上粘贴具有SiO 2表面的第一Si衬底和具有Si表面的第二衬底而获得的SOI衬底的方法，该方法包括：将第二Si的Si表面 从而在将第一Si衬底和第二Si衬底粘贴在一起之前对Si表面赋予疏水性。

    Process for producing semiconductor substrate
    6.
    发明授权
    Process for producing semiconductor substrate 失效
    半导体衬底的制造方法

    公开(公告)号：US06103598A

    公开(公告)日：2000-08-15

    申请号：US678694

    申请日：1996-07-11

    申请人： Kenji Yamagata ,  Takao Yonehara ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

    发明人： Kenji Yamagata ,  Takao Yonehara ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

    IPC分类号： H01L21/306 ,  H01L21/762

    CPC分类号： H01L21/76256 ,  H01L21/0203 ,  H01L21/76243

    摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.

    摘要翻译： 提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到 第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔 通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

    Drop-out correcting luminance-chrominance signal separation circuit
    8.
    发明授权
    Drop-out correcting luminance-chrominance signal separation circuit 失效
    滴出校正亮度 - 色度信号分离电路

    公开(公告)号：US4843457A

    公开(公告)日：1989-06-27

    申请号：US298231

    申请日：1989-01-09

    申请人： Kenji Yamagata

    发明人： Kenji Yamagata

    IPC分类号： H04N9/78 ,  H04N9/804 ,  H04N9/808 ,  H04N9/82 ,  H04N9/88

    CPC分类号： H04N9/88 ,  H04N9/78

    摘要： A luminance-chrominance signal separation circuit in which only those values of a digitized video signal which do not manifest drop-out are used for producing a luminance and a chrominance signal from linear combinations of the video signals. Different combinations are used depending on the locations of the drop-out.

    摘要翻译： 一种亮度色度信号分离电路，其中仅使用不显示辍学的数字化视频信号的值来产生来自视频信号的线性组合的亮度和色度信号。 取决于辍学的位置使用不同的组合。

    Method of forming light-emitting element
    9.
    发明授权
    Method of forming light-emitting element 失效
    形成发光元件的方法

    公开(公告)号：US07550305B2

    公开(公告)日：2009-06-23

    申请号：US11874452

    申请日：2007-10-18

    申请人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

    发明人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

    IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

    CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20

    摘要： An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.

    摘要翻译： 本发明的目的是提供一种以比常规成本低的成本形成发光元件的方法，与常规的基板再循环方法相比，可以抑制由于热变形引起的基板的劣化，并且还具有 其效果与回收基材的方法相同。 通过在第一基板上依次生长分离层和发光层来形成发光元件的方法，将发光层接合到第二基板上，并且去除分离层以形成发光 包括在第一基板上生长各自包含分离层和发光层的多个基团; 将作为最上层存在的发光层图案化为岛状，然后将发光层接合到第二基板上，并且蚀刻与图案化为岛状的发光层相邻的分离层，以形成光 在第二基板上图案化成岛状的发光层。

    Substrate processing apparatus and method
    10.
    发明授权
    Substrate processing apparatus and method 失效
    基板加工装置及方法

    公开(公告)号：US06309505B1

    公开(公告)日：2001-10-30

    申请号：US09037479

    申请日：1998-03-10

    申请人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

    发明人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

    IPC分类号： B65G4907

    CPC分类号： H01L21/68728 ,  H01L21/67092 ,  Y10T29/53191 ,  Y10T156/1744

    摘要： One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180° to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.

    摘要翻译： 将一个晶片放置在晶片支撑台上，其前侧面向上，另一个晶片被其前侧朝上的晶片卡盘部分卡住。 晶片卡盘部分围绕轴枢转大约180°以使两个晶片彼此面对大致平行。 响应于通过晶片卡盘部分取消上晶片的夹持，上晶片的中心部分被压针按压以叠加两个晶片。