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1.发明申请公开(公告)号：US20110052914A1
公开(公告)日：2011-03-03
申请号：US12805926
申请日：2010-08-25
CPC分类号： C23C16/52 , C01B33/035 , C23C16/24 , C23C16/45557 , C23C16/4587 , C23C16/46 , Y10T428/2964
摘要： A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.
摘要翻译： 一种多晶硅制造方法，其特征在于，在将原料气体供给到高压状态的反应器之前，通过增加原料气体的温度，防止熔融，保持高生长速度和高产率，从而降低从硅棒的对流传热，包括： 向反应器中的硅籽晶棒提供电流以使硅籽晶棒产生热量; 在高压状态下向反应器中的硅籽晶棒供给大量含有氯硅烷的预热原料气体。
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2.发明申请METHOD FOR PRODUCING TRICHLOROSILANE AND APPARATUS FOR PRODUCING TRICHLOROSILANE 审中-公开用于生产三氯硅烷的方法和用于生产三氯硅烷的装置公开(公告)号：US20090324477A1
公开(公告)日：2009-12-31
申请号：US12309627
申请日：2007-10-26
IPC分类号： C01B33/107 , F28D21/00 , F28D5/00
CPC分类号： C01B33/1071
摘要： An apparatus comprising: a reaction chamber 2 into which silicon tetrachloride and hydrogen is introduced for producing a reaction product gas containing trichlorosilane and hydrogen chloride by a reductive reaction at a temperature of not lower than 800° C.; a reaction product gas discharging device 4 that discharges the reaction product gas in the reaction chamber 2 to the outside; a cooling gas introducing device 5 that mixes hydrogen, silicon tetrachloride, or hydrogen chloride in the reaction product gas being discharged by the reaction product gas discharging device 4 to cool the reaction product gas.
摘要翻译： 一种装置，包括：反应室2，其中引入四氯化硅和氢气，以在不低于800℃的温度下通过还原反应制备含有三氯硅烷和氯化氢的反应产物气体; 反应产物气体排出装置4，其将反应室2中的反应产物气体排出到外部; 在由反应产物气体排出装置4排出的反应产物气体中混合氢，四氯化硅或氯化氢的冷却气体导入装置5，以冷却反应产物气体。
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公开(公告)号：US09994455B2
公开(公告)日：2018-06-12
申请号：US12451666
申请日：2008-05-23
IPC分类号： C01B33/107 , C01B33/027
CPC分类号： C01B33/1071 , C01B33/027
摘要： A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C.
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4.发明申请Apparatus And Method For Manufacturing Trichlorosilane And Method For Manufacturing Polycrystalline Silicon 有权用于制造三氯硅烷的装置和方法及制造多晶硅的方法公开(公告)号：US20100178230A1
公开(公告)日：2010-07-15
申请号：US12451666
申请日：2008-05-23
IPC分类号： C01B33/107 , B01J8/00
CPC分类号： C01B33/1071 , C01B33/027
摘要： A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C.
摘要翻译： 制造三氯硅烷的方法包括：通过进行四氯化硅和氢的转化反应，生成含有三氯硅烷，二氯二亚甲基，氯化氢和高级硅烷化合物的第一反应产物气体的转化反应方法（第一反应方法） 在等于或高于1000℃等于或低于1900℃的第一温度范围内的原料; 用于将第一反应产物气体在1秒钟内冷却到950℃以下的第一冷却方法（第一反应产物气体在0.01秒内冷却至低于600℃的温度）; 第二反应方法，用于在等于或等于或等于或等于或等于或等于或等于或等于或等于或等于或等于或等于950℃的时间内将第一反应产物气体的温度维持在等于或高于600℃的第二温度范围内 大于0.01秒且等于或小于5秒; 以及将经过第二反应处理的第二反应产物气体冷却至低于600℃的第二冷却工序。
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公开(公告)号：US08551580B2
公开(公告)日：2013-10-08
申请号：US12805926
申请日：2010-08-25
IPC分类号： C23C16/24
CPC分类号： C23C16/52 , C01B33/035 , C23C16/24 , C23C16/45557 , C23C16/4587 , C23C16/46 , Y10T428/2964
摘要： A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.
摘要翻译： 一种多晶硅制造方法，其特征在于，在将原料气体供给到高压状态的反应器之前，通过增加原料气体的温度，防止熔融，保持高生长速度和高产率，从而降低从硅棒的对流传热，包括： 向反应器中的硅籽晶棒提供电流以使硅籽晶棒产生热量; 在高压状态下向反应器中的硅籽晶棒供给大量含有氯硅烷的预热原料气体。
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公开(公告)号：US08507051B2
公开(公告)日：2013-08-13
申请号：US12805083
申请日：2010-07-12
IPC分类号： C23C16/24
CPC分类号： C23C16/46 , C01B33/02 , C01B33/035 , C23C16/24 , Y10T428/12 , Y10T428/2975
摘要： A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
摘要翻译： 多晶硅制造方法包括：第一工序和第二工序。 在第一种方法中，通过调节硅晶棒的电流值将表面温度保持在预定范围，并且在将棒的表面的每平方毫米的氯代硅烷的供给量保持在 直到杆的中心部分的温度达到比多晶硅的熔点低的预定温度，并且在第二过程中，预先确定的电流值对应于棒直径和 杆的表面每平方毫米的原料气体减少，以将棒的中心部分的表面温度和温度分别维持在预定范围。
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7.发明申请公开(公告)号：US20110014468A1
公开(公告)日：2011-01-20
申请号：US12805083
申请日：2010-07-12
CPC分类号： C23C16/46 , C01B33/02 , C01B33/035 , C23C16/24 , Y10T428/12 , Y10T428/2975
摘要： A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
摘要翻译： 多晶硅制造方法包括：第一工序和第二工序。 在第一种方法中，通过调节硅晶棒的电流值将表面温度保持在预定范围，并且在将棒的表面的每平方毫米的氯代硅烷的供给量保持在 直到杆的中心部分的温度达到比多晶硅的熔点低的预定温度，并且在第二过程中，预先确定的电流值对应于棒直径和 杆的表面每平方毫米的原料气体减少，以将棒的中心部分的表面温度和温度分别维持在预定范围。
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8.发明授权公开(公告)号：US07292770B2
公开(公告)日：2007-11-06
申请号：US10219566
申请日：2002-08-15
申请人： Yasuo Nakano , Makoto Urushihara , Takashi Ohkubo
发明人： Yasuo Nakano , Makoto Urushihara , Takashi Ohkubo
IPC分类号： H04N5/91
CPC分类号： H04N5/782 , G11B27/107 , G11B27/11 , G11B27/34 , G11B2220/41 , G11B2220/655 , G11B2220/90 , H04N5/765 , H04N5/772 , H04N5/9201
摘要： An information processing apparatus is disclosed which includes: a retrieving element for retrieving storage medium information and image data information from a memory formed integrally with a storage medium having image data recorded thereon; a recording element for recording to a database the image data information in conjunction with the storage medium information, the image data information having been retrieved by the retrieving element; and a displaying element for displaying the storage medium information and the image data information recorded by the recording element.
摘要翻译： 本发明公开了一种信息处理装置，它包括：检索元件，用于从与其上记录有图像数据的存储介质整体形成的存储器中检索存储介质信息和图像数据信息; 记录元件，用于与所述存储介质信息一起向所述数据库记录所述图像数据信息，所述图像数据信息已由所述检索元件检索; 以及用于显示由记录元件记录的存储介质信息和图像数据信息的显示元件。
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公开(公告)号：US20050286361A1
公开(公告)日：2005-12-29
申请号：US10522752
申请日：2003-09-02
IPC分类号： G11B27/031 , G11B27/034 , G11B27/28 , G11B27/32 , H04N5/765 , H04N5/781 , H04N5/85 , H04N9/80 , G11B5/09
CPC分类号： G11B27/329 , G11B27/031 , G11B27/034 , G11B27/28 , G11B2220/213 , G11B2220/216 , G11B2220/218 , G11B2220/2562 , G11B2220/2575 , G11B2220/90 , H04N5/765 , H04N5/781 , H04N5/85 , H04N9/80
摘要： The present invention relates to an information processing apparatus adapted to execute a sequence of processing operations for recording video data recorded to a first recording medium in a first format to a second recording medium in a second format, without user's manual intervention. Any one of three settings is provided in accordance with total time Tx of data to be written to a DVD: a first setting in which a maximum value of image bit rate (first value B1) and a maximum value of audio bit rate (second value B2) are used; a second setting in which a first value of image bit rate and a third value B3 of audio bit rate are used; and a third setting in which a fourth value of image bit rate determined on the basis of line 152 and the third value B3 of audio bit rate are used. The present invention is applicable to information processing apparatuses for recording the data recorded to a digital cassette video tape to a DVD.
摘要翻译： 信息处理装置技术领域本发明涉及一种信息处理装置，其用于执行用于以第二格式将记录在第一记录介质上的视频数据以第二格式记录到第二记录介质的处理操作的顺序，无需用户的手动干预。 根据要写入DVD的数据的总时间Tx提供三个设置中的任何一个：第一设置，其中图像比特率（第一值B1）的最大值和音频比特率的最大值（第二值 B2）; 使用图像比特率的第一值和音频比特率的第三值B3的第二设置; 以及第三设置，其中使用基于线152确定的第四值图像比特率和音频比特率的第三值B3。 本发明可应用于将记录在数字盒式磁带上的数据记录到DVD的信息处理装置。
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公开(公告)号：US20060126449A1
公开(公告)日：2006-06-15
申请号：US10525965
申请日：2003-09-02
IPC分类号： G11B21/08
CPC分类号： G11B27/034 , G11B27/032 , G11B2220/213 , G11B2220/216 , G11B2220/218 , G11B2220/2545 , G11B2220/2562 , G11B2220/2575 , G11B2220/90 , H04N5/765 , H04N5/781 , H04N5/84 , H04N5/85
摘要： The present invention relates to an information processing apparatus and a program for executing a sequence of processing operations including the recording of video data recorded to a first recording medium in a first format to a second recording medium in a second format without user's manual intervention. If the information processing apparatus determines that the recording time of a frame just reproduced by a predetermined reproduction device is earlier than the recording time of a frame reproduced by said reproduction device immediately before the above-mentioned frame (step S89) or an unrecorded area has been reproduced by the reproduction device for more than a predetermined period of time (step S90), the information processing apparatus stops the acquisition of the data recorded to a digital video tape reproduced by the reproduction device (step S92), thereby stopping the reproduction of the digital video tape (step S93). The present invention is applicable to information processing apparatus for recording data from digital cassette video tape to DVD, for example.
摘要翻译： 本发明涉及一种信息处理装置和程序，用于执行一系列处理操作，包括以第一格式将记录到第一记录介质的视频数据以第二格式以第二格式记录到第二记录介质中，无需用户的手动干预。 如果信息处理设备确定由预定再现设备刚刚再现的帧的记录时间早于紧接在上述帧之前的所述再现设备再现的帧的记录时间（步骤S89）或未记录区域 已经被再现装置重放了超过预定时间段（步骤S90），信息处理装置停止对记录到由再现装置再现的数字视频磁带的数据的获取（步骤S92），从而停止 数字录像带的再现（步骤93）。 本发明可应用于例如从数字盒式磁带录制数据到DVD的信息处理装置。
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