摘要:
Disclosed is a supercritical processing apparatus which can suppress the occurrence of pattern collapse, improve the throughput, and prolong a maintenance interval. In the disclosed supercritical processing apparatus to remove a liquid remained on a substrate by a super-critical state processing fluid, a heating unit heats the processing fluid to place the processing fluid into a processing receptacle in a supercritical state, and a cooling mechanism forcibly cools an area capable of transferring the heat to the substrate from the heating unit in order to suppress the liquid from being evaporated from the substrate until the substrate is disposed on a seating unit.
摘要:
Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.
摘要:
A heating device 1 includes a flat heating chamber 3 provided with a side opening. A substrate W is carried in a horizontal position through the side opening into the processing chamber 3, and is subjected to a heating process in the heating chamber 3. the heating chamber 3 is provided with heating plates 34 and 35 respectively provided with heating elements 34a and 35a, and a cooling mechanism 2 for cooling the heating plates 34 and 35. A controller 7 controls the cooling mechanism such that the heating plates 34 and 35 are cooled after the completion of the heating process for heating the substrate W and before a succeeding substrate W is carried into the heating chamber 3, and controls the heating elements 34a and 35a such that the heating plates 34 and 35 are heated at a processing temperature after the succeeding substrate has been carried into the heating chamber 3.
摘要:
Disclosed are an improved semiconductor memory cell suitable for high integration and a novel method of fabricating the same. The memory cell has a large capacitance and a small area. The memory cell also has a plurality of bit-lines buried in an isolation region in a semiconductor substrate. The bit-line has a very small width and thickness thereby reducing a parasitic capacity between the bit-line and the semiconductor substrate. The memory cell may further be provided with a noise shielding line. Further, disclosed is a novel memory cell array of a semiconductor memory. The buried bit-line is coupled with a bit-line connecting sub-arrays and both are separated by a insulation film. A plurality of pairs of the bit-lines are arranged in rows. A word-line is coupled with a sub-word line and both are separated by a insulation film. A plurality of pairs of the word-lines are arranged in columns. The memory cells are arranged at the intersections of the buried bit-lines and the word-lines. The memory cells are also alternatively arranged on the adjacent buried bit-lines so that the number of the memory cells arranged on one of the buried bit-lines are reduced.
摘要:
A plurality of ring trays supporting loaded treatment objects are arranged in parallel at predetermined spacing in the vertical axis direction and are supported by rods at a minimum of three locations separated from the rod couplings. Cutouts are provided in each ring tray that do not extend to the ring tray center open area. Supporting teeth are provided on the arms driven by drive devices and are inserted via the cutouts. The supporting teeth straddle the ring tray and are shifted relatively on both sides of the vertical direction, and can exchange the wafers between the ring tray and the supporting teeth. By this, problems occurring with regard to various types of heat treatment of the treatment objects, such as treatment object slippage, can be prevented. In addition, a plurality of treatment objects can be exchanged at one time, thereby allowing the exchanging time to be shortened.
摘要:
An iron ore or mill scale is crushed to form a powder having an average particle diameter not exceeding 12 microns. The powder is heated at a temperature of 600.degree. C. to 900.degree. C. in the presence of oxygen to form an iron oxide containing at least 98.0% of Fe.sub.2 O.sub.3. The iron oxide is mixed with strontium oxide or carbonate. The mixture is calcined to form strontium ferrite. The calcined product is pulverized, the crushed material is molded in a magnetic field, and the molded product is sintered to yield a magnet of strontium ferrite having a high level of performance.
摘要翻译:将铁矿石或粉碎物粉碎以形成平均粒径不超过12微米的粉末。 在氧气存在下,将该粉末在600〜900℃的温度下加热,形成含有至少98.0%的Fe 2 O 3的氧化铁。 氧化铁与氧化锶或碳酸盐混合。 将混合物煅烧形成锶铁氧体。 将煅烧产物粉碎,将破碎的材料在磁场中模制,并将模制产品烧结以产生具有高性能水平的锶铁氧体磁体。
摘要:
A process for producing ferrite powder for high performance ferrite magnets is claimed, which comprises: milling magnetite or mill scale into a powder comprising particles of specified particle size; oxidizing the milled product to obtain a powder containing 98.0% or higher Fe.sub.2 O.sub.3 ; further adding thereto iron oxide originated from iron chloride or iron sulfide together with an oxide or a carbonate of Sr or Ba; and calcining the resulting powder mixture.The present invention provides a low-cost process for producing ferrite powder for ferrite magnets having high pellet strength as well as high magnetic properties, from which a high performance Sr-ferrite magnet as well as Ba-ferrite magnet suitable for use in automobile motors can be readily produced by simply molding the powder under a magnetic field and sintering.
摘要翻译:一种用于生产用于高性能铁氧体磁体的铁氧体粉末的方法,其特征在于,它包括:将磁铁矿或磨料粉碎成包含特定粒度的颗粒的粉末; 氧化研磨产物得到含有98.0%或更高的Fe 2 O 3的粉末; 进一步添加源自氯化铁或硫化铁的氧化铁与Sr或Ba的氧化物或碳酸盐; 并煅烧所得的粉末混合物。 本发明提供了一种用于制造铁氧体磁铁铁氧体粉末的低成本方法,其具有高的颗粒强度以及高的磁性能,其中适用于汽车电动机的高性能Sr-铁氧体磁体以及Ba-铁氧体磁体可由该方法 通过在磁场下简单地成型粉末并烧结容易地制造。
摘要:
A substrate treatment apparatus of the present invention includes: a holding means for rotatably holding a substrate to be treated; a coating solution supply nozzle for supplying a coating solution onto the front surface of the substrate to be treated held on the holding means; a treatment container with an upper surface open for housing them; an exhaust means for exhausting an atmosphere in the treatment container from the bottom; a multiblade centrifugal fan provided on the inner periphery of the treatment container for flowing airflow on a front surface side of the substrate to the exhaust means; and a controller for controlling the number of rotations of the multiblade centrifugal fan corresponding to the number of rotations of the substrate, wherein the number of rotations of the multiblade centrifugal fan is controlled so that turbulent airflow flowing in a circumferential direction on the front surface of the substrate generated due to the rotation of the substrate is corrected to laminar airflow flowing in a radial direction.
摘要:
Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.
摘要:
Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.