公开(公告)号：US5334257A

公开(公告)日：1994-08-02

申请号：US66416

申请日：1993-05-25

申请人： Hironobu Nishi ,  Kazuo Terada

发明人： Hironobu Nishi ,  Kazuo Terada

IPC分类号： H01L21/22 ,  H01L21/673 ,  H01L21/677 ,  B05C13/02

CPC分类号： H01L21/67781 ,  Y10S269/903 ,  Y10S414/137 ,  Y10S414/138

摘要： A plurality of ring trays supporting loaded treatment objects are arranged in parallel at predetermined spacing in the vertical axis direction and are supported by rods at a minimum of three locations separated from the rod couplings. Cutouts are provided in each ring tray that do not extend to the ring tray center open area. Supporting teeth are provided on the arms driven by drive devices and are inserted via the cutouts. The supporting teeth straddle the ring tray and are shifted relatively on both sides of the vertical direction, and can exchange the wafers between the ring tray and the supporting teeth. By this, problems occurring with regard to various types of heat treatment of the treatment objects, such as treatment object slippage, can be prevented. In addition, a plurality of treatment objects can be exchanged at one time, thereby allowing the exchanging time to be shortened.

摘要翻译： 支撑负载的处理对象的多个环形托盘在垂直轴线方向上以预定的间隔平行布置，并且在与杆联接件分开的至少三个位置处被杆支撑。 每个环形托盘上都设有不延伸到环形托盘中心开放区域的切口。 支撑齿设置在由驱动装置驱动的臂上，并经由切口插入。 支撑齿跨越环形托盘并相对于垂直方向的两侧相对移动，并且可以在环形托盘和支撑齿之间交换晶片。 由此，可以防止对处理对象的各种热处理（例如处理对象滑动）产生的问题。 此外，可以一次交换多个处理对象，从而可以缩短交换时间。

公开(公告)号：US08217313B2

公开(公告)日：2012-07-10

申请号：US12022489

申请日：2008-01-30

申请人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

发明人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

IPC分类号： F27B5/14 ,  C23C16/00

CPC分类号： F27B17/0025 ,  G03F7/168 ,  H01L21/67109

摘要： A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

摘要翻译： 所公开的加热装置包括加热室，该加热室被配置为用与基板相对的加热板加热放置在加热室中的基板; 气流形成部分，其沿着所述加热室中的所述基板的顶表面产生气流; 以及分别位于加热室的内侧壁和与内侧壁相对的第一基板边缘之间以及位于加热室的另一内侧壁和与另一内侧壁相对的第二基板边缘之间的一对第一板构件 。

公开(公告)号：US4706107A

公开(公告)日：1987-11-10

申请号：US830919

申请日：1986-02-20

申请人： Kazuo Terada ,  Susumu Kurosawa ,  Shunichi Suzuki

发明人： Kazuo Terada ,  Susumu Kurosawa ,  Shunichi Suzuki

IPC分类号： G11C11/404 ,  G11C11/4074 ,  H01L27/092 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L29/7841 ,  G11C11/404 ,  G11C11/4074 ,  H01L27/092 ,  H01L27/108

摘要： A semiconductor memory device has a semiconductor substrate with a first semiconductor region of one conductivity type in the substrate. A second semiconductor region of the opposite conductivity type is formed in the first semiconductor region. A third semiconductor region of the opposite conductivity type is arranged to be in contact with the first semiconductor region. A fourth semiconductor region of the one conductivity type is formed in the third semiconductor region. A fifth semiconductor region of the one conductivity type, within the semiconductor substrate, has a concentration which is higher than the impurity concentration of the first semiconductor region and is provided under the third semiconductor region. A continuous gate electrode is provided via a gate insulating layer formed on the surface of the first semiconductor region and on the surface of the third semiconductor region. The first, second and third semiconductor regions and the gate electrode form a first insulated-gate field effect transistor. The second, third and fourth semiconductor regions and the gate electrode serving as a second insulated-gate field effect transistor.

摘要翻译： 半导体存储器件具有在衬底中具有一种导电类型的第一半导体区域的半导体衬底。 在第一半导体区域中形成相反导电类型的第二半导体区域。 相反导电类型的第三半导体区域布置成与第一半导体区域接触。 在第三半导体区域中形成一种导电类型的第四半导体区域。 半导体衬底内的一种导电类型的第五半导体区域具有比第一半导体区域的杂质浓度高的浓度，并且设置在第三半导体区域的下方。 通过形成在第一半导体区域的表面上和第三半导体区域的表面上的栅极绝缘层提供连续的栅电极。 第一，第二和第三半导体区域和栅电极形成第一绝缘栅场效应晶体管。 第二，第三和第四半导体区域和用作第二绝缘栅场效应晶体管的栅电极。

公开(公告)号：US08434423B2

公开(公告)日：2013-05-07

申请号：US12698455

申请日：2010-02-02

申请人： Takayuki Toshima ,  Kazuo Terada

发明人： Takayuki Toshima ,  Kazuo Terada

IPC分类号： B05C13/00 ,  B05C11/00 ,  B05C3/00 ,  C23C16/00 ,  G03D5/00 ,  B08B6/00 ,  C23F1/00

CPC分类号： H01L21/67057 ,  H01L21/67034 ,  H01L21/67346 ,  H01L21/67748 ,  H01L21/68742

摘要： Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.

摘要翻译： 公开了具有能够抑制图案塌陷的发生的简单结构的基板输送装置。 所公开的基板承载装置的承载托盘包括用于支撑基板的底板和围绕底板设置的周向侧壁。 在底板上形成开口。 升降构件，要从基板转移到其上并通过该开口。 暂时在搬运托盘中形成空间。 开口内的升降构件通过该空间传递到搬运托盘的外部。 当承载基板时，液体被储存在承载托盘内，并且在液体保留在基板的上表面上的同时承载基板。

公开(公告)号：US5616264A

公开(公告)日：1997-04-01

申请号：US259180

申请日：1994-06-13

申请人： Katsuo Nishi ,  Kazuo Terada ,  Wataru Ohkase ,  Kenichi Yamaga

发明人： Katsuo Nishi ,  Kazuo Terada ,  Wataru Ohkase ,  Kenichi Yamaga

IPC分类号： C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  G05D23/19 ,  H05B1/02

CPC分类号： C30B31/12 ,  C23C16/46 ,  C30B25/10 ,  G05D23/1934

摘要： A temperature control method in a rapid heat treatment apparatus comprising simulatively heating dummy wafers in a process tube and previously detecting and grasping by temperature sensors a wafer temperature rising pattern, a heater temperature rising pattern and an internal atmosphere temperature rising pattern, arranging wafers to be processed in the process tube, detecting a temperature of each zone and that of each heater element by the temperature sensors, upon heating the wafers, and controlling each heater element on the basis of the detected temperatures and the wafer, heater and internal atmosphere temperature rising patterns by a controller to rapidly and uniformly raise the temperature of each wafer until the temperature of the wafers in each zone reaches the intended one and becomes stable.

摘要翻译： 一种快速热处理装置中的温度控制方法，包括在处理管中模拟加热虚拟晶片并预先通过温度传感器检测和掌握晶片温度升高图案，加热器温度升高图案和内部气氛升温图案，将晶片设置为 在处理管中处理，在加热晶片时，通过温度传感器检测每个区域和每个加热器元件的温度，并且基于检测到的温度和晶片，加热器和内部气氛温度升高来控制每个加热器元件 通过控制器快速均匀地提高每个晶片的温度直到每个区域中的晶片的温度达到预期的温度并变得稳定。

公开(公告)号：US5324540A

公开(公告)日：1994-06-28

申请号：US107002

申请日：1993-08-17

申请人： Kazuo Terada

发明人： Kazuo Terada

IPC分类号： C23C16/44 ,  C23C16/458 ,  C30B25/12 ,  F27D3/00 ,  H01L21/00 ,  H02K5/128 ,  H02K49/10 ,  C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/4412 ,  C23C16/4584 ,  C30B25/12 ,  H02K49/106 ,  F27D2003/0087 ,  H02K5/128

摘要： A system for supporting and rotating substrates in a process chamber comprising a first exhaust vacuum pump for exhausting the process chamber, a shaft vertically extending into the process chamber to support wafers in it, bearings for supporting the shaft rotatable, a mechanism for rotating the shaft together with the wafers, a bearing casing for covering the bearings and communicated with the process chamber, a second exhaust vacuum pump for exhausting the bearing casing, and a controller for controlling the first and second exhaust vacuum pumps in such a way that the bearing casing is exhausted by the second exhaust vacuum pump before the process chamber is exhausted by the first exhaust vacuum pump.

摘要翻译： 一种用于在处理室中支撑和旋转衬底的系统，包括用于排出处理室的第一排气真空泵，垂直延伸到处理室中以支撑晶片的轴，用于支撑可旋转轴的轴承，用于使轴旋转的机构 与晶片一起，用于覆盖轴承并与处理室连通的轴承壳体，用于排出轴承壳体的第二排气真空泵和用于控制第一和第二排气真空泵的控制器，使得轴承壳体 在第一排气真空泵排出处理室之前，由第二排气真空泵排出。

公开(公告)号：US08933376B2

公开(公告)日：2015-01-13

申请号：US12015191

申请日：2008-01-16

申请人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

发明人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

IPC分类号： A21B1/00 ,  F27B17/00 ,  H01L21/67

CPC分类号： F27B17/0025 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

摘要： A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . Temperature distribution creating means (heating lamps 2) creates a preheating temperature distribution in the substrate supported on a cooling plate 4 at a waiting position before the substrate is carried into the heating chamber 3 so as to level out the initial temperature distribution.

摘要翻译： 加热装置具有加热室3.当基板被携带到加热室3中时，在基板（晶片W）的表面中产生初始温度分布。 。 。 温度分布生成装置（加热灯2）在将基板搬入加热室3之前的待机位置，在支撑在冷却板4上的基板中产生预热温度分布，以平衡初始温度分布。

公开(公告)号：US07871265B2

公开(公告)日：2011-01-18

申请号：US11987795

申请日：2007-12-04

申请人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

发明人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

IPC分类号： F27D15/02

CPC分类号： H01L21/67109 ,  F28D15/00 ,  F28D15/0266 ,  F28F3/12

摘要： In a heat treatment device including a heating chamber having a heating plate heating a semiconductor wafer, a cooling plate cooling the wafer heated by the heating chamber, and a transporting device transporting the wafer into and from the heating chamber, the cooling plate is provided with a coolant passage, a plurality of projections carrying the wafer with a space between the wafer and the surface of the cooling plate, and suction holes neighboring to the respective projections and connected to a suction device.

摘要翻译： 在具有加热半导体晶片的加热板的加热室的热处理装置中，冷却由加热室加热的晶片的冷却板和将晶片输送到加热室的输送装置， 冷却剂通道，承载晶片的多个突起在晶片和冷却板的表面之间具有空间，以及与各个突起相邻并连接到抽吸装置的抽吸孔。

公开(公告)号：US20080169279A1

公开(公告)日：2008-07-17

申请号：US12015191

申请日：2008-01-16

申请人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

发明人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

IPC分类号： F27D11/00 ,  C23C16/00

CPC分类号： F27B17/0025 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

摘要： A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . . Temperature distribution creating means (heating lamps 2) creates a preheating temperature distribution in the substrate supported on a cooling plate 4 at a waiting position before the substrate is carried into the heating chamber 3 so as to level out the initial temperature distribution.

摘要翻译： 加热装置具有加热室3。 当衬底被携带到加热室3中时，在衬底（晶片W）的表面中产生初始温度分布。 。 。 。 温度分布生成装置（加热灯2）在将基板搬入加热室3之前的待机位置，在支撑在冷却板4上的基板中产生预热温度分布，以平衡初始温度分布。

公开(公告)号：US20080135207A1

公开(公告)日：2008-06-12

申请号：US11987795

申请日：2007-12-04

申请人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

发明人： Tetsuo Fukuoka ,  Takahiro Kitano ,  Kazuo Terada

IPC分类号： F25B29/00

CPC分类号： H01L21/67109 ,  F28D15/00 ,  F28D15/0266 ,  F28F3/12

摘要： In a heat treatment device including a heating chamber having a heating plate heating a semiconductor wafer, a cooling plate cooling the wafer heated by the heating chamber, and a transporting device transporting the wafer into and from the heating chamber, the cooling plate is provided with a coolant passage, a plurality of projections carrying the wafer with a space between the wafer and the surface of the cooling plate, and suction holes neighboring to the respective projections and connected to a suction device.

摘要翻译： 在具有加热半导体晶片的加热板的加热室的热处理装置中，冷却由加热室加热的晶片的冷却板和将晶片输送到加热室的输送装置， 冷却剂通道，承载晶片的多个突起在晶片和冷却板的表面之间具有空间，以及与各个突起相邻并连接到抽吸装置的抽吸孔。