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公开(公告)号:US20070046392A1
公开(公告)日:2007-03-01
申请号:US11217163
申请日:2005-09-01
申请人: Louis Hsu , Lowrence Clevenger , Timothy Dalton , Carl Radens , Keith Hon Wong , Chih-Chao Yang
发明人: Louis Hsu , Lowrence Clevenger , Timothy Dalton , Carl Radens , Keith Hon Wong , Chih-Chao Yang
IPC分类号: H01P1/10
CPC分类号: H01H50/005 , H01H2050/007 , Y10T29/4902 , Y10T29/49105 , Y10T29/49147
摘要: A MEM switch is described having a free moving element within in micro-cavity, and guided by at least one inductive element. The switch consists of an upper inductive coil; an optional lower inductive coil, each having a metallic core preferably made of permalloy; a micro-cavity; and a free-moving switching element preferably also made of magnetic material. Switching is achieved by passing a current through the upper coil, inducing a magnetic field in the coil element. The magnetic field attracts the free-moving magnetic element upwards, shorting two open wires and thus, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the wires open. When the chip is not mounted with the correct orientation, gravity cannot be used. In such an instance, a lower coil becomes necessary to pull the free-moving switching element back and holding it at its original position.
摘要翻译: 描述了一种MEM开关,其具有在微腔内的自由移动元件,并由至少一个电感元件引导。 开关由上感应线圈组成; 可选的下感应线圈,每个具有优选由坡莫合金制成的金属芯; 微腔; 以及优选也由磁性材料制成的自由移动的开关元件。 通过使电流通过上部线圈来实现切换,从而在线圈元件中产生磁场。 磁场向上吸引自由移动的磁性元件,短路两根开放的电线,从而闭合开关。 当电流停止或反转时,自由移动的磁性元件通过重力返回到微腔的底部并且电线打开。 当芯片未正确安装时,重力不能使用。 在这种情况下,需要下部线圈将自由移动的开关元件拉回并将其保持在其原始位置。
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2.
公开(公告)号:US20070023806A1
公开(公告)日:2007-02-01
申请号:US11193660
申请日:2005-07-29
申请人: Michael Gaidis , Carl Radens , Lawrence Clevenger , Timothy Dalton , Louis Hsu , Keith Hon Wong , Chih-Chao Yang
发明人: Michael Gaidis , Carl Radens , Lawrence Clevenger , Timothy Dalton , Louis Hsu , Keith Hon Wong , Chih-Chao Yang
IPC分类号: H01L29/94
CPC分类号: B82Y10/00 , H01L27/222 , H01L43/12
摘要: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
摘要翻译: 磁性随机存取存储器(MRAM)器件包括形成在下布线层上的磁隧道结(MTJ)堆叠,形成在MTJ堆叠上的硬掩模和形成在硬掩模上的上布线层。 上布线层包括经由位于其中的位线的槽,槽经由与硬掩模接触的位线并与部分地围绕硬掩模的侧壁的蚀刻停止层接触。
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公开(公告)号:US20050128682A1
公开(公告)日:2005-06-16
申请号:US11043760
申请日:2005-01-26
申请人: Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Hon Wong , Chih-Chao Vang
发明人: Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Hon Wong , Chih-Chao Vang
摘要: A method and apparatus for adjusting capacitance of an on-chip capacitor uses exposure of a dielectric material of the capacitor to an ion beam comprising ions of at least one material to modify a dielectric constant of the dielectric material.
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公开(公告)号:US20050070127A1
公开(公告)日:2005-03-31
申请号:US10674719
申请日:2003-09-30
申请人: Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Hon Wong , Chih-Chao Yang
发明人: Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Hon Wong , Chih-Chao Yang
摘要: A method and apparatus for adjusting capacitance of an on-chip capacitor uses exposure of a dielectric material of the capacitor to an ion beam comprising ions of at least one material to modify a dielectric constant of the dielectric material.
摘要翻译: 用于调整片上电容器的电容的方法和装置使用将电容器的电介质材料暴露于包含至少一种材料的离子的离子束,以改变介电材料的介电常数。
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