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    Magnetic Devices and Techniques For Formation Thereof
    1.
    发明申请
    Magnetic Devices and Techniques For Formation Thereof 失效
    磁性器件及其形成技术

    公开(公告)号：US20080043379A1

    公开(公告)日：2008-02-21

    申请号：US11926845

    申请日：2007-10-29

    申请人： Sivananda Kanakasabapathy ,  Michael Gaidis

    发明人： Sivananda Kanakasabapathy ,  Michael Gaidis

    IPC分类号： G11B5/33

    CPC分类号： H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

    摘要： Techniques for forming a magnetic device are provided. In one aspect, a magnetic device includes a magnetic tunnel junction and a dielectric layer formed over at least a portion of the magnetic tunnel junction. The dielectric layer is configured to have an underlayer proximate to the magnetic tunnel junction, and an overlayer on a side of the underlayer opposite the magnetic tunnel junction. The magnetic device further includes a via hole running substantially vertically through the dielectric layer and being self-aligned with the magnetic tunnel junction.

    摘要翻译： 提供了用于形成磁性装置的技术。 在一个方面，磁性装置包括形成在磁性隧道结的至少一部分上的磁性隧道结和介电层。 介电层被配置为具有靠近磁性隧道结的底层，以及与该底层的与磁性隧道结相对的一侧上的覆盖层。 磁性器件还包括通孔，该通孔基本垂直穿过介电层并与磁性隧道结自对准。

    Magnetic devices and techniques for formation thereof
    2.
    发明申请
    Magnetic devices and techniques for formation thereof 失效
    磁性器件及其形成技术

    公开(公告)号：US20070048950A1

    公开(公告)日：2007-03-01

    申请号：US11209951

    申请日：2005-08-23

    申请人： Sivananda Kanakasabapathy ,  Michael Gaidis

    发明人： Sivananda Kanakasabapathy ,  Michael Gaidis

    IPC分类号： H01L21/336

    CPC分类号： H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

    摘要： Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer is configured to have an underlayer proximate to the magnetic device which comprises a first material, and an overlayer on a side of the underlayer opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer, and through the overlayer. In a second etching phase, a second etchant which is selective for etching the underlayer is used to etch the dielectric layer through the underlayer.

    摘要翻译： 提供了用于形成磁性装置的技术。 一方面，形成与磁性装置自对准的通孔的方法包括以下步骤。 在磁性器件的至少一部分上形成电介质层。 电介质层被配置为具有靠近磁性装置的底层，其包括第一材料，并且在与包括第二材料的磁性装置相对的底层的一侧上的覆盖层。 第一种材料与第二种材料不同。 在第一蚀刻阶段中，使用第一蚀刻剂来从覆盖层开始并通过覆盖层来蚀刻介电层。 在第二蚀刻阶段中，使用用于蚀刻底层的第二蚀刻剂来蚀刻通过底层的介电层。

    Hard mask structure for patterning of materials
    3.
    发明申请
    Hard mask structure for patterning of materials 有权
    用于图案化材料的硬掩模结构

    公开(公告)号：US20070020934A1

    公开(公告)日：2007-01-25

    申请号：US11177008

    申请日：2005-07-08

    申请人： Michael Gaidis ,  Sivananda Kanakasabapathy ,  Eugene O'Sullivan

    发明人： Michael Gaidis ,  Sivananda Kanakasabapathy ,  Eugene O'Sullivan

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

    摘要： Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

    摘要翻译： 提供了磁性器件制造技术。 一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。 在待图案化材料的至少一个表面上形成硬掩模结构。 硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。 基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。 硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。 材料被蚀刻。

    Planar magnetic tunnel junction substrate having recessed alignment marks
    6.
    发明申请
    Planar magnetic tunnel junction substrate having recessed alignment marks 有权
    具有凹入对准标记的平面磁性隧道结基板

    公开(公告)号：US20060141737A1

    公开(公告)日：2006-06-29

    申请号：US10560690

    申请日：2003-06-24

    申请人： Michael Gaidis

    发明人： Michael Gaidis

    IPC分类号： H01L21/76

    CPC分类号： H01L21/3212 ,  B82Y10/00 ,  H01L23/544 ,  H01L27/222 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming an alignment mark structure for a semiconductor device includes forming an alignment recess at a selected level of the semiconductor device substrate. A first metal layer is formed over the selected substrate level and within the alignment recess, wherein the alignment recess is formed at a depth such that the first metal layer only partially fills the alignment recess. A second metal layer is formed over the first metal layer such that the alignment recess is completely filled. The second metal layer and the first metal layer are then planarized down to the selected substrate level, thereby creating a sacrificial plug of the second layer material within the alignment recess. The sacrificial plug is removed in a manner so as not to substantially roughen the planarized surface at the selected substrate level.

    摘要翻译： 用于形成半导体器件的对准标记结构的方法包括在半导体器件衬底的选定电平处形成对准凹槽。 第一金属层形成在所选择的基底层上并且在对准凹槽内，其中对准凹部形成在使得第一金属层仅部分地填充对准凹槽的深度。 在第一金属层上形成第二金属层，使得对准凹部完全填充。 然后将第二金属层和第一金属层平坦化到所选择的基底水平，从而在对准凹槽内产生第二层材料的牺牲塞。 以牺牲基板水平的平坦化表面基本粗糙化的方式除去牺牲塞。

    Stacked magnetic devices
    7.
    发明申请
    Stacked magnetic devices 审中-公开
    堆叠式磁性器件

    公开(公告)号：US20060092688A1

    公开(公告)日：2006-05-04

    申请号：US10977792

    申请日：2004-10-29

    申请人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Gaidis

    发明人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Gaidis

    IPC分类号： G11C11/00

    CPC分类号： G11C11/15

    摘要： Techniques for improving magnetic device performance are provided. In one aspect, a magnetic device, e.g., a magnetic random access memory device, is provided which comprises a plurality of current carrying lines; and two or more adjacent stacked magnetic toggling devices sharing at least one of the plurality of current carrying lines in common and positioned therebetween. The magnetic device is configured such that at least one of the adjacent magnetic toggling devices toggles mutually exclusively of another of the adjacent magnetic toggling devices. In an exemplary embodiment, the magnetic device comprises a plurality of levels with each of the adjacent stacked magnetic toggling devices residing in a different level.

    摘要翻译： 提供了提高磁性器件性能的技术。 在一个方面，提供一种磁性装置，例如磁性随机存取存储装置，其包括多个载流线; 以及两个或更多个相邻的层叠磁性切换装置，其共同地共享多个载流线中的至少一个并且位于它们之间。 磁性装置被配置成使得至少一个相邻的磁性切换装置互相切换另一个相邻的磁性切换装置。 在示例性实施例中，磁性装置包括多个级别，其中每个相邻的层叠磁性切换装置处于不同的水平。