公开(公告)号：US20080134977A1

公开(公告)日：2008-06-12

申请号：US11665217

申请日：2005-10-26

申请人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

发明人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67017 ,  C23C16/4408 ,  H01L21/67757

摘要： A gas flow in a load-lock type preliminary chamber is improved. A load-lock type substrate treating apparatus contains a processing chamber (34) for storing and processing a substrate (1); a preliminary chamber (23) continuously arranged to the processing chamber (31); a substrate holding jig mechanism (40) for carrying in and carrying out a substrate holding jig (50) holding multiple substrates (1), to and from the processing chamber (31); an inert gas supply port (61) for supplying inert gas to the preliminary chamber (23); a first exhaust port (71) provided above the inert gas supply port (61) in the preliminary chamber (23) to exhaust the inert gas: a second exhaust port (81) to draw a vacuum in the preliminary chamber (23); and a controller (100) for performing control so that the inert gas supplied from the inert gas supply port (61) is exhausted only from the first exhaust port (71), while maintaining the preliminary chamber (23) drawn a vacuum from the second exhaust port (81) at a specified pressure after raising the pressure.

摘要翻译： 提高了装载型预备室中的气流。 负载锁定型基板处理装置包括用于存储和处理基板（1）的处理室（34）。 连续地布置到处理室（31）的预备室（23）; 用于承载并执行将多个基板（1）保持在所述处理室（31）上的基板保持夹具（50）的基板保持夹具机构（40）。 用于向预备室（23）供给惰性气体的惰性气体供给口（61）; 第一排气口（71），其设置在所述预备室（23）中的所述惰性气体供给口（61）的上方排出所述惰性气体;第二排气口（81），在所述预备室（23）中抽真空; 以及控制器（100），用于进行控制，使得从惰性气体供给口（61）供给的惰性气体仅从第一排气口（71）排出，同时保持预备室（23）从第二排气口 排气口（81）在提高压力之后处于规定的压力。

公开(公告)号：US07731797B2

公开(公告)日：2010-06-08

申请号：US11665217

申请日：2005-10-26

申请人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

发明人： Seiyo Nakashima ,  Tomoshi Taniyama ,  Kenichi Suzaki ,  Yoshikazu Takashima

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67017 ,  C23C16/4408 ,  H01L21/67757

摘要： A gas flow in a load-lock type preliminary chamber is improved. A load-lock type substrate treating apparatus contains a processing chamber (34) for storing and processing a substrate (1); a preliminary chamber (23) continuously arranged to the processing chamber (31); a substrate holding jig mechanism (40) for carrying in and carrying out a substrate holding jig (50) holding multiple substrates (1), to and from the processing chamber (31); an inert gas supply port (61) for supplying inert gas to the preliminary chamber (23); a first exhaust port (71) provided above the inert gas supply port (61) in the preliminary chamber (23) to exhaust the inert gas: a second exhaust port (81) to draw a vacuum in the preliminary chamber (23); and a controller (100) for performing control so that the inert gas supplied from the inert gas supply port (61) is exhausted only from the first exhaust port (71), while maintaining the preliminary chamber (23) drawn a vacuum from the second exhaust port (81) at a specified pressure after raising the pressure.

摘要翻译： 提高了装载型预备室中的气流。 负载锁定型基板处理装置包括用于存储和处理基板（1）的处理室（34）。 连续地布置到处理室（31）的预备室（23）; 用于承载并执行将多个基板（1）保持在所述处理室（31）上的基板保持夹具（50）的基板保持夹具机构（40）。 用于向预备室（23）供给惰性气体的惰性气体供给口（61）; 第一排气口（71），其设置在所述预备室（23）中的所述惰性气体供给口（61）的上方排出所述惰性气体;第二排气口（81），在所述预备室（23）中抽真空; 以及控制器（100），用于进行控制，使得从惰性气体供给口（61）供给的惰性气体仅从第一排气口（71）排出，同时保持预备室（23）从第二排气口 排气口（81）在提高压力之后处于规定的压力。

公开(公告)号：US20060150904A1

公开(公告)日：2006-07-13

申请号：US10528137

申请日：2004-02-20

申请人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

发明人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

IPC分类号： H01L21/20 ,  C23C16/00

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C30B25/08

摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在所述小室（43）中的用于允许所述第一气体流入所述反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的用于将第二气体供应到所述反应炉（39）中的进料管（a1）。 诸如NH 4 Cl的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产产量因此增加。

公开(公告)号：US08172946B2

公开(公告)日：2012-05-08

申请号：US11885551

申请日：2006-02-24

申请人： Tomoshi Taniyama ,  Yoshikazu Takashima ,  Mikio Ohno

发明人： Tomoshi Taniyama ,  Yoshikazu Takashima ,  Mikio Ohno

IPC分类号： C23C16/00

CPC分类号： C23C16/4412 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3185 ,  H01L21/67017 ,  H01L21/67109

摘要： Stagnation of gas used for substrate processing in an exhaust trap is prevented, and localized precipitation of components in the gas used for substrate processing is reduced. The proposed apparatus includes a substrate processing chamber (cylindrical space 250), a gas supply tube 232 for supplying substrate processing gas to the substrate processing chamber, a first exhaust tube (upstream exhaust tube 231a) for discharging gas used for substrate processing from the substrate processing chamber, an exhaust trap 49 for removing components contained in the gas used for substrate processing introduced through the first exhaust tube, and a second exhaust tube (downstream exhaust tube 231b) for exhausting gas out of said exhaust trap 49 after components have been removed from the gas used for substrate processing, wherein the exhaust trap 49 is provided with a cooled baffle plate 59 that is substantially perpendicular to the direction in which gas is introduced into the exhaust trap 49 and that has a concave surface 59a in the side facing the gas introduction port 55a of the exhaust trap 49.

摘要翻译： 防止在排气阱中用于基板处理的气体滞留，并且减少了用于基板处理的气体中的部件的局部沉淀。 所提出的装置包括基板处理室（圆筒空间250），用于向基板处理室供给基板处理气体的气体供给管232，用于从基板排出用于基板处理的气体的第一排气管（上游排气管231a） 处理室，用于除去包含在用于通过第一排气管引入的基板处理的气体中的部件的排气阱49和用于在部件被去除之后将气体从排气阱49排出的第二排气管（下游排气管231b） 来自用于基板处理的气体，其中排气阱49设置有冷却的挡板59，该挡板基本上垂直于气体被引入排气阱49的方向，并且在面向该排气阱的一侧具有凹面59a 排气收集器49的气体导入口55a。

公开(公告)号：US20120006268A1

公开(公告)日：2012-01-12

申请号：US13239889

申请日：2011-09-22

申请人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

发明人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

IPC分类号： C23C16/44

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C30B25/08

摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。 诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

公开(公告)号：US08057599B2

公开(公告)日：2011-11-15

申请号：US10528137

申请日：2004-02-20

申请人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

发明人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

IPC分类号： H01L21/205 ,  H01L21/316

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C30B25/08

摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

公开(公告)号：US08043431B2

公开(公告)日：2011-10-25

申请号：US12382082

申请日：2009-03-09

申请人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

发明人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

IPC分类号： H01L21/205 ,  H01L21/316

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C30B25/08

摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。 诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

公开(公告)号：US08282737B2

公开(公告)日：2012-10-09

申请号：US13239889

申请日：2011-09-22

申请人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

发明人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

IPC分类号： C23C16/44

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C30B25/08

摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。 诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

公开(公告)号：US20090188431A1

公开(公告)日：2009-07-30

申请号：US12382082

申请日：2009-03-09

申请人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

发明人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

IPC分类号： C23C16/00

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C30B25/08

摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。 诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

公开(公告)号：US20080166881A1

公开(公告)日：2008-07-10

申请号：US11885551

申请日：2006-02-24

申请人： Tomoshi Taniyama ,  Yoshikazu Takashima ,  Mikio Ohno

发明人： Tomoshi Taniyama ,  Yoshikazu Takashima ,  Mikio Ohno

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4412 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3185 ,  H01L21/67017 ,  H01L21/67109

摘要： Stagnation of gas used for substrate processing in an exhaust trap is prevented, and localized precipitation of components in the gas used for substrate processing is reduced. The proposed apparatus includes a substrate processing chamber (cylindrical space 250), a gas supply tube 232 for supplying substrate processing gas to the substrate processing chamber, a first exhaust tube (upstream exhaust tube 231a) for discharging gas used for substrate processing from the substrate processing chamber, an exhaust trap 49 for removing components contained in the gas used for substrate processing introduced through the first exhaust tube, and a second exhaust tube (downstream exhaust tube 231b) for exhausting gas out of said exhaust trap 49 after components have been removed from the gas used for substrate processing, wherein the exhaust trap 49 is provided with a cooled baffle plate 59 that is substantially perpendicular to the direction in which gas is introduced into the exhaust trap 49 and that has a concave surface 59a in the side facing the gas introduction port 55a of the exhaust trap 49.

摘要翻译： 防止在排气阱中用于基板处理的气体滞留，并且减少了用于基板处理的气体中的部件的局部沉淀。 所提出的装置包括基板处理室（圆筒形空间250），用于向基板处理室供给基板处理气体的气体供给管232，用于从基板处理室排出用于基板处理的气体的第一排气管（上游排气管231a） 衬底处理室，用于去除用于通过第一排气管引入的用于衬底处理的气体中所含的组分的排气阱49和用于在组件具有后从排气阱49排出气体的第二排气管（下游排气管231b） 从用于基板处理的气体中除去，其中排气阱49设置有冷却的挡板59，其基本上垂直于气体被引入排气阱49中的方向，并且在其中具有凹面59a 面对排气收集器49的气体导入口55a。