公开(公告)号：US20100143081A1

公开(公告)日：2010-06-10

申请号：US12591592

申请日：2009-11-24

申请人： Hyeong-seob Oh ,  Yohan Ahn ,  Hyeong-Ki Kim ,  Ki-Doo Kim ,  Woo-Yong Lee ,  Min-Seon Lee

发明人： Hyeong-seob Oh ,  Yohan Ahn ,  Hyeong-Ki Kim ,  Ki-Doo Kim ,  Woo-Yong Lee ,  Min-Seon Lee

IPC分类号： H01L21/677 ,  H01L21/673

CPC分类号： H01L21/67772 ,  H01L21/67265

摘要： A semiconductor manufacturing apparatus includes a load port supporting a FOUP holding a plurality of wafers, a process module performing a semiconductor manufacturing process on the plurality of wafers, an equipment front end module disposed between the load port and the process module, providing a clean area, and including an opener for opening and closing a door of the FOUP, a transfer module sequentially transferring the plurality of wafers between the FOUP and the process module, and a purge module spraying a purge gas toward the plurality of wafers in the FOUP when the door is open to connect the equipment front end module and the FOUP, so as to make gases released from the plurality of wafers be recovered into the equipment front end module.

摘要翻译： 半导体制造装置包括支撑保持多个晶片的FOUP的负载端口，在多个晶片上执行半导体制造工艺的处理模块，设置在负载端口和处理模块之间的设备前端模块，提供清洁区域 ，并且包括用于打开和关闭FOUP的门的开启器，在FOUP和处理模块之间顺序地传送多个晶片的传送模块以及当FOUP中的多个晶片喷射清洗气体时的清洗模块 门打开以连接设备前端模块和FOUP，以便将从多个晶片释放的气体回收到设备前端模块中。

公开(公告)号：US06996453B2

公开(公告)日：2006-02-07

申请号：US10684436

申请日：2003-10-15

申请人： Yo-Han Ahn ,  Ki-Doo Kim ,  Soo-Woong Lee ,  Jung-Sung Hwang ,  Hyeog-Ki Kim

发明人： Yo-Han Ahn ,  Ki-Doo Kim ,  Soo-Woong Lee ,  Jung-Sung Hwang ,  Hyeog-Ki Kim

IPC分类号： G06F7/00

CPC分类号： H01L21/00 ,  H01L21/67017 ,  Y10S414/139

摘要： A substrate processing apparatus for processing substrates prevents the substrates from contaminating as they are transferred. The apparatus includes a container, like a FOUP, for containing substrates, at least one processing chamber where the substrates are processed, a substrate transferring module including a substrate transfer chamber and at least one load port for supporting a container, and a contamination controlling system for the substrate transfer chamber. The contamination controlling system includes a purge gas supply inlet connected to the substrate transfer chamber, and a gas circulating tube for recycling the purging gas to circulate through the chamber. The substrate transfer chamber is purged using the purging gas to remove moisture and contaminating materials from the substrate transfer chamber. The formation of particles on the substrate otherwise caused by a reaction between the moisture and contaminating materials while the substrate is standing by in the container can be prevented.

摘要翻译： 用于处理基板的基板处理装置防止基板在被转印时被污染。 该装置包括用于容纳衬底的容器，如FOUP，用于处理衬底的至少一个处理室，包括衬底传送室的衬底传送模块和用于支撑容器的至少一个负载端口，以及污染控制系统 用于衬底传送室。 污染控制系统包括连接到基板传送室的吹扫气体供给入口和用于使净化气体循环通过室的气体循环管。 使用净化气体清洗基板传送室，以从基板传送室去除水分和污染材料。 可以防止在衬底上的颗粒在容器中待机时由水分和污染物质之间的反应引起的颗粒的形成。

公开(公告)号：US20050111935A1

公开(公告)日：2005-05-26

申请号：US10857951

申请日：2004-06-02

申请人： Hyeog-Ki Kim ,  Kun-Hyung Lee ,  Ok-Sun Lee ,  Ki-Doo Kim ,  Chang-Min Cho

发明人： Hyeog-Ki Kim ,  Kun-Hyung Lee ,  Ok-Sun Lee ,  Ki-Doo Kim ,  Chang-Min Cho

IPC分类号： B65D85/86 ,  B65G49/00 ,  H01L21/00 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68 ,  B65G65/34

CPC分类号： H01L21/67017 ,  H01L21/67772 ,  H01L21/67775

摘要： An improved wafer transfer apparatus is provided that allows the ambient atmosphere within a modified front open unified pod (“FOUP”) while the FOUP is positioned on a loading stage provided on an equipment front end module (“EFEM”). In particular, the wafer transfer apparatus includes both an injection assembly and an exhaust assembly that will be engaged when the door of the FOUP is docked to a door holder provided on the EFEM. The injection assembly may include a mass flow controller (“MFC”) for controlling the injection of purge gas(es) into the container. Similarly, the exhaust assembly may include a MFC for controlling the removal of fluid from the container. While the door is docked to the door holder, inert or less reactive gases may be introduced into the container, thereby reducing the likelihood of oxidation or contamination of the wafers therein.

摘要翻译： 提供了一种改进的晶片传送装置，其允许在FOUP位于设备前端模块（“EFEM”）上的加载台上时，在改进的前开合统一的盒（“FOUP”）内的环境大气。 特别地，晶片传送装置包括注射组件和排气组件，当FOUP的门对接到设置在EFEM上的门保持器时将被接合。 注射组件可以包括质量流量控制器（“MFC”），用于控制将吹扫气体注入到容器中。 类似地，排气组件可以包括用于控制从容器去除流体的MFC。 当门与门座对接时，可将惰性或较少反应性气体引入容器中，从而减少其中晶片氧化或污染的可能性。