公开(公告)号：US20090081872A1

公开(公告)日：2009-03-26

申请号：US12018836

申请日：2008-01-24

申请人： Hitoshi Kobayashi ,  Masamichi Sakaguchi ,  Koichi Nakaune ,  Masunori Ishihara

发明人： Hitoshi Kobayashi ,  Masamichi Sakaguchi ,  Koichi Nakaune ,  Masunori Ishihara

IPC分类号： H01L21/31 ,  H01L21/3065

CPC分类号： H01L21/31122

摘要： The invention provides an etching method having selectivity of a high-K material such as Al2O3 to polysilicon or hard mask. The present invention provides a method for manufacturing a semiconductor device by etching, using a plasma etching apparatus, a sample including an interlayer insulating layer 14 formed of a high-K material such as Al2O3 of a hard mask 11 and a Poly-Si layer 15 in contact with the interlayer insulating layer, wherein the method includes etching the high-K material 14 using BCl3, He and HBr while setting a temperature of a sample stage to normal temperature and applying a time-modulated high bias voltage, and repeating said etching process and a deposition process using SiCl4, BCl3 and He.

摘要翻译： 本发明提供了一种具有高K材料如Al 2 O 3对多晶硅或硬掩模的选择性的蚀刻方法。 本发明提供一种通过使用等离子体蚀刻装置的蚀刻制造半导体器件的方法，所述样品包括由诸如硬掩模11的Al 2 O 3的高K材料形成的层间绝缘层14和多晶硅层15 与所述层间绝缘层接触，其中所述方法包括在将样品台的温度设定为常温并施加时间调制的高偏压时，使用BCl 3，He和HBr蚀刻高K材料14，并重复所述蚀刻 工艺和使用SiCl4，BCl3和He的沉积工艺。

公开(公告)号：US20070090090A1

公开(公告)日：2007-04-26

申请号：US11345537

申请日：2006-02-02

申请人： Koichi Nakaune ,  Yasuhiro Nishimori ,  Toshiaki Nishida ,  Tsuyoshi Yoshida

发明人： Koichi Nakaune ,  Yasuhiro Nishimori ,  Toshiaki Nishida ,  Tsuyoshi Yoshida

IPC分类号： C23F1/00 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/31138 ,  H01L21/0332 ,  H01L21/312

摘要： A surface treatment method is provided, wherein the ratio of the etching rate of a lower resist of a multilayer resist film used for forming a fine pattern to that of an inorganic intermediate layer thin film serving as a mask to control the dimension of the pattern, that is, the shoulder selection ratio, is increased in an etching treatment of a semiconductor or the like. In the surface treatment method of a semiconductor, in which an inorganic intermediate film and an upper resist film are laminated on a lower resist film, by using plasma, CO2 containing oxygen as a primary component is added to a gas composed of nitrogen and hydrogen, so that an etching gas is prepared. Consequently, cutting of a shoulder of the inorganic intermediate layer film is reduced and a perpendicular shape is attained.

摘要翻译： 提供一种表面处理方法，其中用于形成精细图案的多层抗蚀剂膜的下抗蚀剂与用作掩模的无机中间层薄膜的蚀刻速率之比控制图案的尺寸， 也就是说，肩选择率在半导体等的蚀刻处理中增加。 在其中通过使用等离子体层叠无机中间膜和上抗蚀剂膜的半导体的表面处理方法中，添加含有氧作为主要成分的CO 2， 由氮气和氢气组成的气体，从而制备蚀刻气体。 因此，无机中间层膜的肩部的切割减少并且获得垂直的形状。

公开(公告)号：US20110171833A1

公开(公告)日：2011-07-14

申请号：US13072904

申请日：2011-03-28

申请人： Koichi NAKAUNE ,  Masatoshi OYAMA ,  Motohiro TANAKA ,  Hitoshi TAMURA ,  Masamichi SAKAGUCHI

发明人： Koichi NAKAUNE ,  Masatoshi OYAMA ,  Motohiro TANAKA ,  Hitoshi TAMURA ,  Masamichi SAKAGUCHI

IPC分类号： H01L21/302

CPC分类号： H01L21/31122

摘要： An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

摘要翻译： 本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法，其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异，同时保持对多晶硅的高选择性 电影。 在使用等离子体干法蚀刻High-k膜的方法中，将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

公开(公告)号：US20090065479A1

公开(公告)日：2009-03-12

申请号：US12016434

申请日：2008-01-18

申请人： Koichi NAKAUNE ,  Masatoshi Oyama ,  Motohiro Tanaka ,  Hitoshi Tamura ,  Masamichi Sakaguchi

发明人： Koichi NAKAUNE ,  Masatoshi Oyama ,  Motohiro Tanaka ,  Hitoshi Tamura ,  Masamichi Sakaguchi

IPC分类号： C23F1/00

CPC分类号： H01L21/31122

摘要： An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

摘要翻译： 本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法，其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异，同时保持对多晶硅潜在的高选择性 电影。 在使用等离子体干法蚀刻High-k膜的方法中，将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

公开(公告)号：US06960533B2

公开(公告)日：2005-11-01

申请号：US10314283

申请日：2002-12-09

申请人： Koichi Nakaune ,  Masatoshi Oyama

发明人： Koichi Nakaune ,  Masatoshi Oyama

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31144

摘要： A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor. In the surface processing apparatus, which uses a plasma, a deposition gas is added to a light element of hydrogen as the etching gas. Ions accelerated by a bias electric power supply accelerate etching reaction. Sputtering at edges of the mask can be reduced by using the light element of hydrogen as the etching gas, and the selective ratio of the anti-reflective film to the masking material can be increased by mixing the deposition gas with the hydrogen.

摘要翻译： 提供表面处理装置。 在该装置中，诸如抗反射膜的BARC的有机材料与形成图案的掩模的抗蚀剂，即选择比率的蚀刻速率比高，抗反射膜是用于形成 在半导体的表面处理中具有高精度的图案。 在使用等离子体的表面处理装置中，将沉积气体作为蚀刻气体添加到氢的轻元素中。 通过偏置电源加速的离子加速蚀刻反应。 可以通过使用氢的光元素作为蚀刻气体来减少掩模边缘的溅射，并且可以通过将沉积气体与氢气混合来增加抗反射膜与掩模材料的选择比。