Abstract:
A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.
Abstract:
A modem transmission level and modem sensitivity which are communication control information corresponding to the connection form of each destination device are registered in advance in a destination information storage unit so as to be correlated with an abbreviated dialing number of the destination. When a communication instruction using an abbreviated dialing number is received, if a modem transmission level and modem sensitivity are registered in the destination information storage unit as corresponding to the received abbreviated dialing number, the modem is controlled based on those registered modem transmission level and modem sensitivity. If neither a modem transmission level or modem sensitivity is registered as corresponding to the received abbreviated dialing number, the modem is controlled according to a modem transmission level and modem sensitivity that are registered in advance in the apparatus.
Abstract:
An image communication apparatus includes an unit for obtaining a threshold value that determines a coding format used for transmission of an image stored for the transmission from an information of the image stored for the transmission; and a transmission controlling unit flat transmits the image stored for the transmission using a JBIG format if a size of the image stored for the transmission exceeds the threshold value, and transmits the image using a coding format having a compression ratio lower than that of the JBIG format if the size of the image stored for the transmission does not exceed the threshold value.
Abstract:
A pneumatic tool includes a tool body, a nose part for ejecting a nail, which is provided in a lower part of the tool body, an air chamber for storing compressed air, which is provided in the tool body, an air supply pipe for supplying the compressed air from an air supply source to the air chamber, an air duster, an air duster pipeline connected to an air outlet of the air duster, and an air duster valve for controlling supply of the compressed air to the air duster pipeline.
Abstract:
A semiconductor device provided with: a first interconnection layer provided on a semiconductor substrate; an interlevel insulation film provided over the first interconnection layer; a barrier layer provided between the first interconnection layer and the interlevel insulation film; and a second interconnection layer of gold provided as an uppermost interconnection layer on the interlevel insulation film. The barrier layer is formed in a region of the first interconnection layer including an interlevel connection opening region of the interlevel insulation, and the region is greater than the interlevel connection opening region. The second interconnection layer is electrically connected to the first interconnection layer via the barrier layer in the interlevel connection opening.
Abstract:
The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage supplied to an electrostatic chuck mechanism and a bias current flowing through the electrostatic chuck mechanism, a capacity component which is an impedance representing the electric property of the electrostatic chuck mechanism is computed numerically. Then, based on a predetermined expression, the voltage of the processing substrate is estimated using the bias voltage of the processing substrate to be measured, the bias current flowing through the electrostatic chuck mechanism and the capacity component which is the impedance acquired in advance.
Abstract:
A sheet post-processing apparatus including: a sheet conveying section for conveying sheets to an intermediate stacker by a plurality of conveying rollers containing a conveying roller capable of changing the pressing force against an opposing roller; and a control section wherein, when the first sheet to be assigned to a succeeding bundle of sheets has passed through the conveying roller capable of changing the aforementioned pressing force, and has arrived upstream from the aforementioned intermediate stacker during post-processing a preceding bundle of sheets, the pressing force of the conveying roller capable of changing the aforementioned pressing force is made smaller than the value at the time of conveyance; and after a second sheet has passed through the conveying roller capable of changing the aforementioned pressing force, the pressure is changed to the value at the time of the conveyance.
Abstract:
Embodiments in accordance with the present invention provide a degaussing device and a degaussing method capable of efficiently degaussing a magnetic disk, especially, a magnetic disk of the perpendicular magnetic recording system, without resorting to a magnetic field of a high intensity. Embodiments in accordance with the present invention provide a degaussing method of degaussing a magnetic disk not yet installed in a magnetic disk drive by applying an external magnetic field to the magnetic disk by a degaussing device. In accordance with one embodiment, the method includes disposing the magnetic disk in the degaussing device such that the direction of an external magnetic field is inclined at an angle to the axis of easy magnetization of the magnetic disk.
Abstract:
A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.
Abstract:
A pasting binding apparatus for binding a bundle of sheets comprises a paste coating device to coat a paste in a form of a line onto a binding side of a sheet being conveyed on a conveying passage in a conveying direction by a conveying device; a pressing device located above the paste coating device and to stack the sheet coated with the paste onto the bundle of sheets and to press the sheet onto the bundle of sheets; and the conveying device to convey the sheet to the paste coating device and to the pressing device.