公开(公告)号：US20070090090A1

公开(公告)日：2007-04-26

申请号：US11345537

申请日：2006-02-02

申请人： Koichi Nakaune ,  Yasuhiro Nishimori ,  Toshiaki Nishida ,  Tsuyoshi Yoshida

发明人： Koichi Nakaune ,  Yasuhiro Nishimori ,  Toshiaki Nishida ,  Tsuyoshi Yoshida

IPC分类号： C23F1/00 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/31138 ,  H01L21/0332 ,  H01L21/312

摘要： A surface treatment method is provided, wherein the ratio of the etching rate of a lower resist of a multilayer resist film used for forming a fine pattern to that of an inorganic intermediate layer thin film serving as a mask to control the dimension of the pattern, that is, the shoulder selection ratio, is increased in an etching treatment of a semiconductor or the like. In the surface treatment method of a semiconductor, in which an inorganic intermediate film and an upper resist film are laminated on a lower resist film, by using plasma, CO2 containing oxygen as a primary component is added to a gas composed of nitrogen and hydrogen, so that an etching gas is prepared. Consequently, cutting of a shoulder of the inorganic intermediate layer film is reduced and a perpendicular shape is attained.

摘要翻译： 提供一种表面处理方法，其中用于形成精细图案的多层抗蚀剂膜的下抗蚀剂与用作掩模的无机中间层薄膜的蚀刻速率之比控制图案的尺寸， 也就是说，肩选择率在半导体等的蚀刻处理中增加。 在其中通过使用等离子体层叠无机中间膜和上抗蚀剂膜的半导体的表面处理方法中，添加含有氧作为主要成分的CO 2， 由氮气和氢气组成的气体，从而制备蚀刻气体。 因此，无机中间层膜的肩部的切割减少并且获得垂直的形状。

公开(公告)号：US07112805B2

公开(公告)日：2006-09-26

申请号：US10875231

申请日：2004-06-25

申请人： Yoshitaka Kai ,  Kenichi Kuwabara ,  Takeo Uchino ,  Yasuhiro Nishimori ,  Takeshi Oono ,  Takeshi Shimada

发明人： Yoshitaka Kai ,  Kenichi Kuwabara ,  Takeo Uchino ,  Yasuhiro Nishimori ,  Takeshi Oono ,  Takeshi Shimada

IPC分类号： G01F23/00 ,  G01K5/08

CPC分类号： H01L21/67207 ,  H01L21/67167

摘要： The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers for subjecting a sample to vacuum processing; a vacuum carriage for carrying the sample into and out of the vacuum processing chamber; a switchable chamber capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette support for supporting a plurality of cassettes and a controller for controlling carrying of the sample from a cassette through the switchable chambers, the vacuum carriage means into and out of the vacuum processing chamber. The vacuum processing chamber is equipped with an etching chamber and a critical dimension measurement chamber for critical dimension inspection of the sample.

摘要翻译： 本发明提供一种半导体制造装置，其能够防止样品的携带时间增加，样品输出的劣化，占地面积的增加和投资成本的增加。 真空处理装置包括用于对样品进行真空处理的多个真空处理室; 用于将样品进入和离开真空处理室的真空托架; 能够在大气和真空之间切换以将样品进出真空处理室的可切换室; 用于支撑多个盒的盒支撑件和控制器，用于控制样品从盒通过可切换室的携带，真空托架装置进入和离开真空处理室。 真空处理室配有蚀刻室和临界尺寸测量室，用于对样品进行临界尺寸检验。

公开(公告)号：US08486291B2

公开(公告)日：2013-07-16

申请号：US13011070

申请日：2011-01-21

申请人： Takeshi Ohmori ,  Yasuhiro Nishimori ,  Hiroaki Ishimura ,  Hitoshi Kobayashi ,  Masamichi Sakaguchi

发明人： Takeshi Ohmori ,  Yasuhiro Nishimori ,  Hiroaki Ishimura ,  Hitoshi Kobayashi ,  Masamichi Sakaguchi

IPC分类号： C03C15/00

CPC分类号： H01J37/32816 ,  B08B7/0035 ,  H01J37/32834

摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

摘要翻译： 在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。 等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过 蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。

公开(公告)号：US07049243B2

公开(公告)日：2006-05-23

申请号：US10754594

申请日：2004-01-12

申请人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

发明人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

IPC分类号： H01L21/302

CPC分类号： H01J37/32082 ,  H01L21/32136

摘要： A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.

摘要翻译： 一种用于蚀刻具有使用电磁波在真空室中产生等离子体的栅极氧化膜的样品的等离子体处理方法，对样品施加rf偏置功率，在样品的充电电压达到击穿之前关断rf偏置功率 栅极氧化膜的电压在样品的充电电压基本上下降之后导通rf偏置功率，并重复rf偏置功率的导通和截止以处理样品。 关断时间至少比导通时间长，并且通过连续供电以在反复打开和关闭rf偏置功率期间产生等离子体而产生等离子体。

公开(公告)号：US06492277B1

公开(公告)日：2002-12-10

申请号：US09393893

申请日：1999-09-10

申请人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

发明人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

IPC分类号： H01L21302

CPC分类号： H01J37/32082 ,  H01L21/32136

摘要： Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.

摘要翻译： 抑制其等离子体蚀刻对半导体元件的电气损伤。 在通过等离子体蚀刻处理精细图案时，在图案的一部分处的电荷电位达到与所述精细图案互连的栅极氧化膜的击穿电压之前，施加到样本的高频电源被关断 ，然后当图案部分的电荷电位基本上下降时，高频电源被接通。 该开启和关闭控制以重复的操作模式进行。

公开(公告)号：US08931294B2

公开(公告)日：2015-01-13

申请号：US13549703

申请日：2012-07-16

申请人： Takaya Yamada ,  Yasuhiro Nishimori

发明人： Takaya Yamada ,  Yasuhiro Nishimori

IPC分类号： F25D23/12 ,  B25J19/00

CPC分类号： B25J19/0054

摘要： An object is to provide a cooling unit which can reduce influence of radiation heat from a work piece having high temperature on members surrounding the work piece, prevent leak of coolant and vacuum leak, reduce cost, and prevent turning angle of a work piece conveying mechanism from being limited. The cooling unit is attached to the work piece conveying mechanism in the state that the outer wall part is in close contact with the to-be-cooled surface. The coolant stored in the lower space is evaporated by the heat transmitted from the to-be-cooled surface P via the outer wall part, and the to-be-cooled surface is cooled via the outer wall part by the heat of evaporation lost at the time of the evaporation of the coolant. The vapor in the lower space (coolant container) is discharged to the vacuum chamber by the vapor exhaust unit when the pressure of the vapor in the lower space reaches the fixed value or higher.

摘要翻译： 本发明的目的是提供一种冷却单元，其可以降低来自具有高温的工件的辐射热对围绕工件的构件的影响，防止冷却剂的泄漏和真空泄漏，降低成本，并且防止工件输送机构的转动角度 从有限。 冷却单元在外壁部与待冷却表面紧密接触的状态下安装在工件输送机构上。 存储在下部空间中的冷却剂被从被冷却表面P经由外壁部分传递的热量蒸发，并且被冷却的表面通过外壁部分被蒸发的热量所损失， 冷却液蒸发的时间。 当下部空间中的蒸汽压力达到固定值或更高时，下部空间中的蒸汽（冷却剂容器）通过蒸气排出单元排出到真空室。

公开(公告)号：US08075733B2

公开(公告)日：2011-12-13

申请号：US12240293

申请日：2008-09-29

申请人： Seiichi Watanabe ,  Naoki Yasui ,  Susumu Tauchi ,  Yasuhiro Nishimori

发明人： Seiichi Watanabe ,  Naoki Yasui ,  Susumu Tauchi ,  Yasuhiro Nishimori

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32293 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/2001

摘要： A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.

摘要翻译： 等离子体处理装置包括：内部被压下的减压室; 气体供给单元，其将处理气体供给到所述室中; 微波供应单元，其将微波供应到所述室中以产生等离子体; 物体放置电极，其中处理材料被放置并将处理材料保持在所述室中; 以及抽吸单元，其连接到所述室以排出所述室中的气体，其中所述室，用于将气体提供到所述气体供应单元的室中的部分，用于将微波引入所述微波供应室 单元，物体放置电极和抽真空单元与腔室的中心轴同轴设置，用于引入微波的部件包括微波旋转发生器，其旋转输入微波的偏振面并将微波提供给 房间。

公开(公告)号：US20060016781A1

公开(公告)日：2006-01-26

申请号：US10928266

申请日：2004-08-30

申请人： Kenichi Kuwabara ,  Yasuhiro Nishimori ,  Masunori Ishihara ,  Satoshi Une

发明人： Kenichi Kuwabara ,  Yasuhiro Nishimori ,  Masunori Ishihara ,  Satoshi Une

IPC分类号： H01L21/302 ,  C23F1/00

CPC分类号： H01L21/3065 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138

摘要： The object of the invention is to provide a dry etching method for processing the edge portion of a hard mask to have a round profile. The present method for manufacturing a semiconductor device comprises (b) forming a silicon nitride film 12 mask using a patterned photoresist 13, (c) cutting back the photoresist 13 via dry etching, and (d) etching the exposed edge portion of the silicon nitride film mask 12, to thereby enable trench processing using a silicon nitride film mask 12 having a rounded edge portion.

摘要翻译： 本发明的目的是提供一种用于处理硬掩模的边缘部分以具有圆形轮廓的干蚀刻方法。 本发明的半导体器件的制造方法包括：（b）使用图案化的光致抗蚀剂13形成氮化硅膜12掩模，（c）通过干蚀刻切割光致抗蚀剂13，以及（d）蚀刻氮化硅的暴露边缘部分 膜掩模12，从而能够使用具有圆形边缘部分的氮化硅膜掩模12进行沟槽加工。

公开(公告)号：US06946847B2

公开(公告)日：2005-09-20

申请号：US10355979

申请日：2003-01-30

申请人： Yasuhiro Nishimori ,  Shuji Omae ,  Masakatsu Mito ,  Yuji Ishida ,  Koji Itadani

发明人： Yasuhiro Nishimori ,  Shuji Omae ,  Masakatsu Mito ,  Yuji Ishida ,  Koji Itadani

IPC分类号： H03H11/30 ,  G01R27/00 ,  H03H7/38

CPC分类号： H03H11/30

摘要： An impedance matching device is provided, for which the electric characteristics at an output terminal are accurately analyzed. The matching device is provided with an input detector for detecting RF voltage and current at the input terminal, and an output detector for detecting RF voltage outputted from the output terminal. The matching device also includes a controller for achieving impedance matching between a high frequency power source connected to the input terminal and a load connected to the output terminal. The impedance matching is performed by adjusting variable capacitors based on the detection data supplied from the input detector. When the impedance of the power source is matched to that of the load, the controller calculates the output impedance, RF voltage and RF current at the output terminal, based on the adjusted capacitances of the capacitors, a pre-obtained reactance-impedance data and the detection data supplied from the output detector.

摘要翻译： 提供一种阻抗匹配装置，对输出端子的电气特性进行准确分析。 匹配装置设置有用于检测输入端子处的RF电压和电流的输入检测器，以及用于检测从输出端子输出的RF电压的输出检测器。 匹配装置还包括用于实现连接到输入端子的高频电源与连接到输出端子的负载之间的阻抗匹配的控制器。 通过根据从输入检测器提供的检测数据调整可变电容器来进行阻抗匹配。 当电源的阻抗与负载的阻抗相匹配时，控制器根据电容器的调整电容，预先获得的电抗阻抗数据和电容阻抗数据，计算输出端的输出阻抗，RF电压和RF电流， 从输出检测器提供的检测数据。

公开(公告)号：US08277563B2

公开(公告)日：2012-10-02

申请号：US13019131

申请日：2011-02-01

申请人： Masunori Ishihara ,  Masamichi Sakaguchi ,  Yasuhiro Nishimori ,  Yutaka Kudou ,  Satoshi Une

发明人： Masunori Ishihara ,  Masamichi Sakaguchi ,  Yasuhiro Nishimori ,  Yutaka Kudou ,  Satoshi Une

IPC分类号： B08B7/00

CPC分类号： H01J37/32743 ,  H01J37/3244 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/67213

摘要： The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.

摘要翻译： 本发明提供一种等离子体处理方法，其包括（i）供给转移气体，该转移气体降低处理室和转移室之间的压力差，以防止颗粒附着在待处理样品上，被处理通过到处理室， 在将样品转移到处理室之前; （ii）将所述样品转移到所述处理室中，同时继续将所述转移气体供给到所述处理室; （iii）在所述处理室中从所述转移气体产生等离子体，同时在转移所述样品的步骤之后继续将所述转移气体供给到所述处理室; 以及（iv）将从产生等离子体的步骤中使用的转移气体中提供给处理室的气体改变为用于对不同于清洁样品的处理样品进行等离子体处理的处理气体。