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公开(公告)号:US20050282408A1
公开(公告)日:2005-12-22
申请号:US11147610
申请日:2005-06-08
申请人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
IPC分类号: B23K26/067 , C30B1/00 , C30B13/24 , C30B35/00 , G01B11/02 , H01L21/20 , H01L21/26 , H01L21/336 , H01L29/786
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L27/1285 , H01L29/6675 , H01L29/78672
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
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公开(公告)号:US07660042B2
公开(公告)日:2010-02-09
申请号:US11148050
申请日:2005-06-08
申请人: Nobuo Sasaki , Koichi Ohki
发明人: Nobuo Sasaki , Koichi Ohki
IPC分类号: H01L31/0232
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。
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公开(公告)号:US20050264824A1
公开(公告)日:2005-12-01
申请号:US11147611
申请日:2005-06-08
申请人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
IPC分类号: B23K26/067 , C30B1/00 , C30B13/24 , C30B35/00 , G01B11/02 , H01L21/20 , H01L21/26 , H01L21/336 , H01L29/786
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
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公开(公告)号:US20050227504A1
公开(公告)日:2005-10-13
申请号:US11147897
申请日:2005-06-08
申请人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
IPC分类号: B23K26/067 , C30B1/00 , C30B13/24 , C30B35/00 , G01B11/02 , H01L21/20 , H01L21/26 , H01L21/336 , H01L29/786
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L27/1285 , H01L29/6675 , H01L29/78672
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
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公开(公告)号:US20080062498A1
公开(公告)日:2008-03-13
申请号:US11980287
申请日:2007-10-30
申请人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。
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6.
公开(公告)号:US07541230B2
公开(公告)日:2009-06-02
申请号:US11483897
申请日:2006-07-10
申请人: Nobuo Sasaki , Koichi Ohki
发明人: Nobuo Sasaki , Koichi Ohki
IPC分类号: H01L27/14
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到基板上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。
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公开(公告)号:US07528023B2
公开(公告)日:2009-05-05
申请号:US11980287
申请日:2007-10-30
申请人: Nobuo Sasaki , Koichi Ohki
发明人: Nobuo Sasaki , Koichi Ohki
IPC分类号: H01L27/14
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。
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公开(公告)号:US20050233556A1
公开(公告)日:2005-10-20
申请号:US11147556
申请日:2005-06-08
申请人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
IPC分类号: B23K26/067 , C30B1/00 , C30B13/24 , C30B35/00 , G01B11/02 , H01L21/20 , H01L21/26 , H01L21/336 , H01L29/786
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。
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公开(公告)号:US20050227460A1
公开(公告)日:2005-10-13
申请号:US11147879
申请日:2005-06-08
申请人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
IPC分类号: B23K26/067 , C30B1/00 , C30B13/24 , C30B35/00 , G01B11/02 , H01L21/20 , H01L21/26 , H01L21/336 , H01L29/786
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
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公开(公告)号:US20050225771A1
公开(公告)日:2005-10-13
申请号:US11148050
申请日:2005-06-08
申请人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人: Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
IPC分类号: B23K26/067 , C30B1/00 , C30B13/24 , C30B35/00 , G01B11/02 , H01L21/20 , H01L21/26 , H01L21/336 , H01L29/786
CPC分类号: H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
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