Apparatus for crystallizing semiconductor with laser beams
    2.
    发明授权
    Apparatus for crystallizing semiconductor with laser beams 失效
    用激光束使半导体结晶的装置

    公开(公告)号:US07660042B2

    公开(公告)日:2010-02-09

    申请号:US11148050

    申请日:2005-06-08

    IPC分类号: H01L31/0232

    摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

    摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。

    Apparatus for crystallizing semiconductor with laser beams
    5.
    发明申请
    Apparatus for crystallizing semiconductor with laser beams 失效
    用激光束使半导体结晶的装置

    公开(公告)号:US20080062498A1

    公开(公告)日:2008-03-13

    申请号:US11980287

    申请日:2007-10-30

    IPC分类号: G02B26/02 G02B27/10

    摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

    摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。

    Method and apparatus for crystallizing semiconductor with laser beams
    6.
    发明授权
    Method and apparatus for crystallizing semiconductor with laser beams 失效
    用激光束使半导体结晶的方法和装置

    公开(公告)号:US07541230B2

    公开(公告)日:2009-06-02

    申请号:US11483897

    申请日:2006-07-10

    IPC分类号: H01L27/14

    摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

    摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到基板上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。

    Apparatus for crystallizing semiconductor with laser beams
    7.
    发明授权
    Apparatus for crystallizing semiconductor with laser beams 失效
    用激光束使半导体结晶的装置

    公开(公告)号:US07528023B2

    公开(公告)日:2009-05-05

    申请号:US11980287

    申请日:2007-10-30

    IPC分类号: H01L27/14

    摘要: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

    摘要翻译: 由多个激光源发射的激光束被分成多个子光束,这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统,它包括一个子光束分割组件和一个子光束聚焦组件。 而且,该装置还包括激光源,聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件,设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。