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公开(公告)号：US08020749B2
公开(公告)日：2011-09-20
申请号：US12944421
申请日：2010-11-11
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
Abstract translation: 根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面 在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。
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公开(公告)号：US07850059B2
公开(公告)日：2010-12-14
申请号：US11301115
申请日：2005-12-13
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
Abstract translation: 根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面 在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。
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公开(公告)号：US07984840B2
公开(公告)日：2011-07-26
申请号：US12944417
申请日：2010-11-11
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
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公开(公告)号：US07361590B2
公开(公告)日：2008-04-22
申请号：US11334391
申请日：2006-01-19
Applicant: Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
Inventor： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC: H01L21/4763 , H01L21/44
CPC classification number: H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
Abstract translation: 一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层 表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。 此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或 金属或合金。 通过制造方法，可以有利地将半导体元件与金属基板结合。
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公开(公告)号：US20060160330A1
公开(公告)日：2006-07-20
申请号：US11334391
申请日：2006-01-19
Applicant: Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
Inventor： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
CPC classification number: H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
Abstract translation: 一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层 表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。 此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或 金属或合金。 通过制造方法，可以有利地将半导体元件与金属基板结合。
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Patent Agency Ranking
公开(公告)号：US20060150387A1
公开(公告)日：2006-07-13
申请号：US11301115
申请日：2005-12-13
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC: B23P25/00
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
Abstract translation: 根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面 在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。
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公开(公告)号：US20110100962A1
公开(公告)日：2011-05-05
申请号：US12944421
申请日：2010-11-11
Applicant: Kojiro KOBAYASHI , Akio HIROSE , Shigeyuki NAKAGAWA , Kenji MIYAMOTO , Minoru KASUKAWA , Masayuki INOUE , Tetsuji MORITA
Inventor： Kojiro KOBAYASHI , Akio HIROSE , Shigeyuki NAKAGAWA , Kenji MIYAMOTO , Minoru KASUKAWA , Masayuki INOUE , Tetsuji MORITA
IPC: B23K11/11
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
Abstract translation: 根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面 在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。
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公开(公告)号：US20080303161A1
公开(公告)日：2008-12-11
申请号：US12042716
申请日：2008-03-05
Applicant: Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
Inventor： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC: H01L23/48
CPC classification number: H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
Abstract translation: 一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层 表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。 此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或 金属或合金。 通过制造方法，可以有利地将半导体元件与金属基板结合。
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公开(公告)号：US5242513A
公开(公告)日：1993-09-07
申请号：US773636
申请日：1991-11-27
Applicant: Kojiro Kobayashi , Yoshinobu Takeda
Inventor： Kojiro Kobayashi , Yoshinobu Takeda
CPC classification number: B22F3/007 , B22F9/004 , B22F9/008 , C22C1/0416 , C22C45/08
Abstract: An aluminum-chromium based alloy which has a high strength, an excellent heat resistance, corrosion resistance, and a light weight contains 10 to 25 atomic percent of Cr and 0.1 to 5.0 atomic percent of Fe and/or Ni. The total content of Cr, and Fe and/or Ni is not more than 30 atomic percent The remainder substantially consists of aluminum. The aluminum-chromium based alloy partially or entirely exhibits and amorphous state by X-ray diffraction. This aluminum-chromium based alloy is obtained by first preparing a powder by a rapid solidification method, then converting the powder raw material to an amorphous powder by performing a mechanical grinding treatment thereon, and then hot working the amorphous powder.
Abstract translation: PCT No.PCT / JP91 / 00336 Sec。 371日期1991年11月27日 102（e）1991年11月27日PCT 1991年3月13日PCT PCT。 WO91 / 14013 PCT出版物 日本1991年9月19日。具有高强度，优异的耐热性，耐腐蚀性和轻质量的铝铬系合金含有10〜25原子％的Cr和0.1〜5.0原子％的Fe和/或 倪 Cr，Fe和/或Ni的总含量不超过30原子％余量基本上由铝构成。 铝 - 铬基合金通过X射线衍射部分或全部显示和非晶状态。 该铝 - 铬基合金是通过首先通过快速固化法制备粉末，然后通过对其进行机械研磨处理将粉末原料转化为无定形粉末，然后热加工无定形粉末而获得的。
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公开(公告)号：US20110056920A1
公开(公告)日：2011-03-10
申请号：US12944417
申请日：2010-11-11
Applicant: Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
Inventor： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
CPC classification number: B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
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