公开(公告)号：US08883371B2

公开(公告)日：2014-11-11

申请号：US11873176

申请日：2007-10-16

申请人： Joydeep Bhattacharjee ,  Kota V. R. M. Murali

发明人： Joydeep Bhattacharjee ,  Kota V. R. M. Murali

IPC分类号： C01B3/00 ,  H01M8/06 ,  H01M8/00

CPC分类号： C01B3/0026 ,  C01B3/001 ,  C01B3/0031 ,  H01M8/00 ,  Y02E60/327

摘要： Hydrogen storage materials are provided that may be capable of a hydrogenated state and dehydrogenated state. The hydrogen storage material comprises a plurality of hydrogen storage molecular units. Each hydrogen storage molecular unit comprises a transition metal bonded to one or more elements from period 2 of the periodic table, wherein the hydrogen storage material includes at least 6.5% molecular hydrogen by weight when in the hydrogenated state and is stable at temperatures below about 200° C. and at pressures of about 1 atm and below. The hydrogen storage materials may be used in conjunction with fuel cells in portable electronic devices.

摘要翻译： 提供可以具有氢化状态和脱氢状态的储氢材料。 储氢材料包括多个储氢分子单元。 每个储氢分子单元包含与周期表周期2中的一种或多种元素结合的过渡金属，其中当处于氢化状态时，储氢材料包含至少6.5重量％的分子氢，并且在低于约200℃的温度下是稳定的 ℃和约1atm及以下的压力。 氢存储材料可以与便携式电子设备中的燃料电池结合使用。

公开(公告)号：US08450792B2

公开(公告)日：2013-05-28

申请号：US13082867

申请日：2011-04-08

申请人： Mohit Bajaj ,  Kota V. R. M. Murali ,  Edward J. Nowak ,  Rajan K. Pandey

发明人： Mohit Bajaj ,  Kota V. R. M. Murali ,  Edward J. Nowak ,  Rajan K. Pandey

IPC分类号： H01L29/792

CPC分类号： H01L29/7391 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/66356

摘要： Gate induced drain leakage in a tunnel field effect transistor is reduced while drive current is increased by orienting adjacent semiconductor bodies, based on their respective crystal orientations or axes, to optimize band-to-band tunneling at junctions. Maximizing band-to-band tunneling at a source-channel junction increases drive current, while minimizing band-to-band tunneling at a channel-drain junction decreases GIDL. GIDL can be reduced by an order of magnitude in an embodiment. Power consumption for a given frequency can also be reduced by an order of magnitude.

摘要翻译： 通过基于它们各自的晶体取向或轴定向相邻的半导体本体来增加隧道场效应晶体管中的栅极感应漏极泄漏，同时通过使相邻的半导体本体取向来提高驱动电流，以优化在结处的带 - 带隧穿。 在源极 - 沟道结上最大化带 - 带隧穿可增加驱动电流，同时最小化通道 - 漏极结上的带 - 带隧穿可以减小GIDL。 在实施例中，GIDL可以减少一个数量级。 给定频率的功耗也可以减少一个数量级。

公开(公告)号：US07453412B2

公开(公告)日：2008-11-18

申请号：US11690965

申请日：2007-03-26

申请人： Kota V R M Murali ,  Steven J. Franson

发明人： Kota V R M Murali ,  Steven J. Franson

IPC分类号： H01Q1/00

CPC分类号： H01Q1/38 ,  H01Q1/36

摘要： A communication device (310) is provided that includes a nano-sized RF antenna (100) having low power consumption and wide-range frequency spectrum based on bottom-up nanotechnology. The antenna (100) includes an insulator layer (110) positioned between a free magnetic layer (112) and a fixed magnetic layer (108). A DC voltage source (124) is coupled to the free magnetic layer (112) and the fixed magnetic layer (108) for providing a current (118) therethrough. A detector (126) is coupled between the antenna (100) and the DC voltage source (124) for detecting a change in the current (118) in response to a radiated signal being received by the antenna (100) which causes a change in the spin on electrons in the free magnetic layer (112).

公开(公告)号：US20080238779A1

公开(公告)日：2008-10-02

申请号：US11690965

申请日：2007-03-26

申请人： Kota V. R. M. Murali ,  Steven J. Franson

发明人： Kota V. R. M. Murali ,  Steven J. Franson

IPC分类号： H01Q1/36

CPC分类号： H01Q1/38 ,  H01Q1/36

摘要： A communication device (310) is provided that includes a nano-sized RF antenna (100) having low power consumption and wide-range frequency spectrum based on bottom-up nanotechnology. The antenna (100) includes an insulator layer (110) positioned between a free magnetic layer (112) and a fixed magnetic layer (108). A DC voltage source (124) is coupled to the free magnetic layer (112) and the fixed magnetic layer (108) for providing a current (118) therethrough. A detector (126) is coupled between the antenna (100) and the DC voltage source (124) for detecting a change in the current (118) in response to a radiated signal being received by the antenna (100) which causes a change in the spin on electrons in the free magnetic layer (112).

摘要翻译： 提供了一种通信设备（310），其包括基于自下而上的纳米技术的具有低功耗和宽范围频谱的纳米级RF天线（100）。 天线（100）包括位于自由磁性层（112）和固定磁性层（108）之间的绝缘体层（110）。 直流电压源（124）耦合到自由磁性层（112）和固定磁性层（108），用于提供穿过其中的电流（118）。 检测器（126）耦合在天线（100）和直流电压源（124）之间，用于响应于由天线（100）接收的辐射信号来检测电流（118）的变化，这导致变化 在自由磁性层（112）中的电子的旋转。

公开(公告)号：US09105498B2

公开(公告)日：2015-08-11

申请号：US13409630

申请日：2012-03-01

申请人： Mohit Bajaj ,  Kota V. R. M. Murali ,  Rahul Nayak ,  Edward J. Nowak ,  Rajan K. Pandey

发明人： Mohit Bajaj ,  Kota V. R. M. Murali ,  Rahul Nayak ,  Edward J. Nowak ,  Rajan K. Pandey

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78

CPC分类号： H01L27/0922 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/7845

摘要： A stack of a gate dielectric layer and a workfunction material layer are deposited over a plurality of semiconductor material portions, which can be a plurality of semiconductor fins or a plurality of active regions in a semiconductor substrate. A first gate conductor material applying a first stress is formed on a first portion of the workfunction material layer located on a first semiconductor material portion, and a second gate conductor material applying a second stress is formed on a second portion of the workfunction material layer located on a second semiconductor material portion. The first and second stresses are different in at least one of polarity and magnitude, thereby inducing different strains in the first and second portions of the workfunction material layer. The different strains cause the workfunction shift differently in the first and second portions of the workfunction material layer, thereby providing devices having multiple different workfunctions.