公开(公告)号：US09135990B2

公开(公告)日：2015-09-15

申请号：US13819217

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C17/16

CPC分类号： G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79

摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

摘要翻译： 存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。 从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲 通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。 当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

公开(公告)号：US20130155757A1

公开(公告)日：2013-06-20

申请号：US13819217

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C13/00

CPC分类号： G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79

摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

摘要翻译： 存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。 从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲 通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。 当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

公开(公告)号：US20130170285A1

公开(公告)日：2013-07-04

申请号：US13819247

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C2213/79 ,  H01L27/101

摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

摘要翻译： 在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙 其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到 低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

公开(公告)号：US09190145B2

公开(公告)日：2015-11-17

申请号：US13819247

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C11/00 ,  G11C13/00 ,  H01L27/10

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C2213/79 ,  H01L27/101

摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

摘要翻译： 在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙 其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到 低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。