公开(公告)号：US6077733A

公开(公告)日：2000-06-20

申请号：US389885

申请日：1999-09-03

Applicant: Yen-Ming Chen ,  Wei-Jen Liu ,  Shih-Chi Lin ,  Kuo-Chou Liu

Inventor： Yen-Ming Chen ,  Wei-Jen Liu ,  Shih-Chi Lin ,  Kuo-Chou Liu

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/51 ,  H01L21/338

CPC classification number: H01L29/66583 ,  H01L21/28114 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/42376 ,  H01L29/518

Abstract: A new method is provided to manufacture a T-shaped gate. A layer of insulation is deposited over a semiconductor surface (typically the surface of a substrate), a dual damascene structure containing a via opening and a conducting line trench is created in the layer of insulation. A layer of sacrificial oxide is grown and subsequently removed (preventing initial surface defects and providing protection during subsequent steps of etching). A layer of gate oxide is selectively grown on the bottom of the dual damascene opening. A layer of poly is deposited over the layer of insulation thereby including the dual damascene opening, the poly is planarized down to essentially the top of the dual damascene structure and the insulation is removed from above the surface of the substrate in the regions surrounding the dual damascene structure leaving the dual damascene structure in place.

Abstract translation: 提供了一种制造T形门的新方法。 绝缘层沉积在半导体表面（通常是衬底的表面）上，在绝缘层中形成包含通孔和导线沟槽的双镶嵌结构。 生长一层牺牲氧化物并随后去除（防止初始表面缺陷并在随后的蚀刻步骤期间提供保护）。 选择性地在双镶嵌开口的底部生长一层栅极氧化物。 一层多晶硅沉积在绝缘层上，从而包括双镶嵌开口，多晶平面化到基本上是双镶嵌结构的顶部，并且在围绕双镶嵌结构的区域中从基板表面上方去除绝缘体 镶嵌结构离开双镶嵌结构就位。