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    Method of producing an LED rope light
    4.
    发明授权
    Method of producing an LED rope light 失效
    LED绳灯的制造方法

    公开(公告)号：US06860007B1

    公开(公告)日：2005-03-01

    申请号：US10647228

    申请日：2003-08-26

    Applicant: Li-Wen Liu ,  Wei-Jen Liu

    Inventor： Li-Wen Liu ,  Wei-Jen Liu

    IPC: F21S4/00 ,  H05K3/30 ,  H05K13/00

    CPC classification number: F21S4/26 ,  F21Y2115/10 ,  Y10T29/49117 ,  Y10T29/49139 ,  Y10T29/49147 ,  Y10T29/49162 ,  Y10T29/49169 ,  Y10T29/49204 ,  Y10T29/49208

    Abstract: A method of producing a light-emitting-diode (LED) rope light includes the steps of preparing a plurality of light seats defining a recess therein and a plurality of metal wires having two conductive plates connected to two ends thereof; positioning two conductive plates from two different metal wires in each light seat; forming the light seats into light-emitting diodes; serially connecting the light seats to provide an LED light string; positioning the LED light string into a hollow power cord holder with two electrodes of the LED light string connected to two power cords embedded in the power cord holder; and quickly enclosing said power cord holder with a transparent outer tube by way of injection molding to form an LED rope light.

    Abstract translation: 一种制造发光二极管（LED）绳索灯的方法包括以下步骤：制备在其中限定凹部的多个轻型座，以及多个金属线，其具有连接到其两端的两个导电板; 在每个灯座中从两个不同的金属线定位两个导电板; 将灯座形成发光二极管; 串联连接灯座以提供LED灯串; 将LED灯串定位到中空电源线支架中，LED灯串的两个电极连接到嵌入电源线支架中的两根电源线; 并通过注射成型将所述电源线支架快速地封闭在透明外管上，以形成LED绳索灯。

    Method of manufacturing self-aligned T-shaped gate through dual damascene
    5.
    发明授权
    Method of manufacturing self-aligned T-shaped gate through dual damascene 有权
    通过双镶嵌制造自对准T形门的方法

    公开(公告)号：US6077733A

    公开(公告)日：2000-06-20

    申请号：US389885

    申请日：1999-09-03

    Applicant: Yen-Ming Chen ,  Wei-Jen Liu ,  Shih-Chi Lin ,  Kuo-Chou Liu

    Inventor： Yen-Ming Chen ,  Wei-Jen Liu ,  Shih-Chi Lin ,  Kuo-Chou Liu

    IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/51 ,  H01L21/338

    CPC classification number: H01L29/66583 ,  H01L21/28114 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/42376 ,  H01L29/518

    Abstract: A new method is provided to manufacture a T-shaped gate. A layer of insulation is deposited over a semiconductor surface (typically the surface of a substrate), a dual damascene structure containing a via opening and a conducting line trench is created in the layer of insulation. A layer of sacrificial oxide is grown and subsequently removed (preventing initial surface defects and providing protection during subsequent steps of etching). A layer of gate oxide is selectively grown on the bottom of the dual damascene opening. A layer of poly is deposited over the layer of insulation thereby including the dual damascene opening, the poly is planarized down to essentially the top of the dual damascene structure and the insulation is removed from above the surface of the substrate in the regions surrounding the dual damascene structure leaving the dual damascene structure in place.

    Abstract translation: 提供了一种制造T形门的新方法。 绝缘层沉积在半导体表面（通常是衬底的表面）上，在绝缘层中形成包含通孔和导线沟槽的双镶嵌结构。 生长一层牺牲氧化物并随后去除（防止初始表面缺陷并在随后的蚀刻步骤期间提供保护）。 选择性地在双镶嵌开口的底部生长一层栅极氧化物。 一层多晶硅沉积在绝缘层上，从而包括双镶嵌开口，多晶平面化到基本上是双镶嵌结构的顶部，并且在围绕双镶嵌结构的区域中从基板表面上方去除绝缘体 镶嵌结构离开双镶嵌结构就位。

    Parallel structure high conductibility cable with conductor keeper
    6.
    发明授权
    Parallel structure high conductibility cable with conductor keeper 失效
    平行结构高导电电缆与导线管

    公开(公告)号：US08586868B2

    公开(公告)日：2013-11-19

    申请号：US12984718

    申请日：2011-01-05

    Applicant: Li-Wen Liu ,  Wei-Jen Liu

    Inventor： Li-Wen Liu ,  Wei-Jen Liu

    IPC: H02G15/02 ,  H01R4/22 ,  H01R4/60

    CPC classification number: H02G3/0481

    Abstract: A cable has a conductor keeper, multiple bare conductors, a dielectric tape, a plastic jacket and two copper cylinders. The conductor keeper has multiple grooves. Each bare conductor is mounted in a corresponding groove of the conductor keeper and has a first end and a second end. The first end and second end of the bare conductor protrude out of the conductor keeper respectively so as to form two spaces. The dielectric tape is wrapped around the conductor keeper. The plastic jacket is coated around the dielectric tape. Two copper cylinders are mounted in the spaces of the bare conductors respectively to make the bare conductors surround the copper cylinders and the bare conductors connect to each other in parallel. Therefore, the skin effect is minimized and the bare conductors are efficient in that power consumption and emission of carbon dioxide during copper-smelting are significantly reduced.

    Abstract translation: 电缆具有导体保持器，多个裸导体，介质带，塑料外壳和两个铜圆柱体。 导线管具有多个槽。 每个裸导体安装在导体保持器的相应凹槽中，并且具有第一端和第二端。 裸导体的第一端和第二端分别从导体保持器突出，形成两个空间。 电介质胶带缠绕在导体保持器上。 塑料外套涂在电介质胶带周围。 两个铜柱分别安装在裸导体的空间中，以使裸导体围绕铜圆柱体并且裸导体彼此并联连接。 因此，皮肤效应被最小化，并且裸导体是有效的，因为在铜熔炼期间的功率消耗和二氧化碳的排放显着减少。

    Apparatus of high dynamic-range CMOS image sensor and method thereof
    8.
    发明申请
    Apparatus of high dynamic-range CMOS image sensor and method thereof 审中-公开

    公开(公告)号：US20090002533A1

    公开(公告)日：2009-01-01

    申请号：US12149973

    申请日：2008-05-12

    Applicant: Oscal T.-C Chen ,  Wei-Jen Liu ,  Hsiu-Fen Yeh

    Inventor： Oscal T.-C Chen ,  Wei-Jen Liu ,  Hsiu-Fen Yeh

    IPC: H04N5/335

    CPC classification number: H04N5/374 ,  H01L27/14609 ,  H04N5/35518

    Abstract: The present invention discloses an apparatus of high dynamic-range CMOS image sensor and method thereof. The present invention utilize a pixel circuit outputting an output signal, wherein the pixel circuit has a photodiode and a plurality of transistors; and utilize a current source as a charge supplement unit to supply current into one end of the photodiode, and providing charges to the parasitic capacitor of the photodiode to delay saturation in the pixel circuit. In addition, a feedback circuit can be further designed connecting the pixel circuit. The feedback circuit receives the output signal from the pixel circuit and then outputs a control signal according to the output signal of the pixel circuit to control status of the charge supplement unit, and thereby increasing the dynamic range of the CMOS image sensor.

    Multilayer Composite Conductor and Manufacturing Method Thereof
    10.
    发明申请
    Multilayer Composite Conductor and Manufacturing Method Thereof 审中-公开
    多层复合导体及其制造方法

    公开(公告)号：US20160133353A1

    公开(公告)日：2016-05-12

    申请号：US14534244

    申请日：2014-11-06

    Applicant: Li-Wen Liu ,  Wei-Jen Liu

    Inventor： Li-Wen Liu ,  Wei-Jen Liu

    IPC: H01B5/10 ,  H01B13/02 ,  H01B1/02 ,  H01B3/30 ,  H01B13/00

    CPC classification number: H01B1/026 ,  H01B1/023 ,  H01B3/30 ,  H01B5/105

    Abstract: A multilayer composite conductor comprises an inner layer and an outer layer. The inner layer comprises at least one wire which has a conductivity of 60% to 70% IACS as a core of the multilayer composite conductor; wherein a volume of the inner layer is 40% to 55% of a total volume of the multilayer composite conductor; and the outer layer comprises multiple wires which have a conductivity of 70% to 98% IACS, and the outer layer is wound around the inner layer; wherein a volume of the outer layer is 45% to 60% of the total volume of the multilayer composite conductor. In another aspect, the present invention also provides a method for manufacturing a multilayer composite conductor. At the same current-carrying surface, the multilayer composite conductor of the present invention saves more than 60% of copper usage, thereby achieving light weight and low cost.

    Abstract translation: 多层复合导体包括内层和外层。 内层包含至少一根导线，其导电率为60％至70％IACS作为多层复合导体的核心; 其中所述内层的体积为所述多层复合导体的总体积的40％至55％; 并且外层包含具有70％至98％IACS的导电率的多根导线，外层缠绕在内层上; 其中所述外层的体积为所述多层复合导体的总体积的45％至60％。 另一方面，本发明还提供一种制造多层复合导体的方法。 在相同的载流表面上，本发明的多层复合导体节省了铜的使用量的60％以上，从而实现了轻量化且成本低廉。

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