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1687 条记录 (耗时 0.046 秒)

    CAP ASSEMBLY AND SECONDARY BATTERY HAVING THE SAME
    1.
    发明申请
    CAP ASSEMBLY AND SECONDARY BATTERY HAVING THE SAME 审中-公开
    CAP组装和二次电池

    公开(公告)号：US20090297927A1

    公开(公告)日：2009-12-03

    申请号：US12369058

    申请日：2009-02-11

    申请人： Dae-Kyu Kim ,  Ik-Kyu Kim

    发明人： Dae-Kyu Kim ,  Ik-Kyu Kim

    IPC分类号： H01M2/04 ,  H01M2/02 ,  H01M2/12

    CPC分类号： H01M2/1241 ,  H01M2/0413 ,  H01M2/046 ,  H01M2/345 ,  H01M10/0525

    摘要： A cap assembly and a secondary battery having the same, the cap assembly including a vent that breaks at a relatively low, uniform, breaking pressure. The vent includes a body, a connecting part that extends from an edge of the body and is bent towards the body, and a flange that extends from the connecting part and is bent away from the body. The connecting part is thinner than the body and the flange. The secondary battery includes an electrode assembly, a can to house the electrode assembly, and the cap assembly to seal the can.

    摘要翻译： 盖组件和具有其的二次电池，盖组件包括以相对较低，均匀的破裂压力断裂的通气口。 通气口包括主体，从主体的边缘延伸并朝向主体弯曲的连接部分，以及从连接部分延伸并且远离主体弯曲的凸缘。 连接部分比主体和法兰更薄。 二次电池包括电极组件，容纳电极组件的罐和用于密封罐的盖组件。

    POSITIVE ELECTRODE ACTIVE MATERIAL WITH HIGH CAPACITY AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME
    2.
    发明申请
    POSITIVE ELECTRODE ACTIVE MATERIAL WITH HIGH CAPACITY AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME 有权
    具有高容量的正极电极活性材料和包括其的锂二次电池

    公开(公告)号：US20110311869A1

    公开(公告)日：2011-12-22

    申请号：US13167460

    申请日：2011-06-23

    申请人： Song Taek OH ,  Sun Kyu KIM ,  Geun Chang CHUNG ,  Sin Kyu KIM ,  Hyun Seok LEE ,  Bong Kook YOUN

    发明人： Song Taek OH ,  Sun Kyu KIM ,  Geun Chang CHUNG ,  Sin Kyu KIM ,  Hyun Seok LEE ,  Bong Kook YOUN

    IPC分类号： H01M4/50 ,  H01M10/04 ,  H01M4/13 ,  H01M4/04 ,  B82Y30/00

    CPC分类号： H01M4/131 ,  H01M4/0447 ,  H01M4/1391 ,  H01M4/364 ,  H01M4/366 ,  H01M4/505 ,  H01M4/525 ,  H01M4/625 ,  H01M10/0525 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/49108

    摘要： A high capacity lithium secondary battery includes a lithium manganese oxide having a layered structure exhibiting a great irreversible capacity in the event of overcharging at a high voltage and a spinel-based lithium manganese oxide. Because it is activated at a high voltage of 4.45 V or higher based on a positive electrode potential, additional lithium for utilizing a 3V range of the spinel-based lithium manganese oxide can be provided and an even profile in the entire SOC area can be obtained. Because the lithium secondary battery includes the mixed positive electrode active material including the spinel-based lithium manganese oxide and the lithium manganese oxide having a layered structure, and is charged at a high voltage, its stability can be improved. Also, the high capacity battery having a large available SOC area and improved stability without causing an output shortage due to a rapid voltage drop in the SOC area can be implemented.

    摘要翻译： 大容量锂二次电池包括具有在高电压过充电情况下具有很大不可逆容量的层状结构的锂锰氧化物和尖晶石型锂锰氧化物。 由于在基于正电极电位的4.45V以上的高电压下被激活，所以可以提供用于利用3V范围的尖晶石型锂锰氧化物的附加锂，并且可以获得整个SOC区域的均匀分布 。 由于锂二次电池包括具有层状结构的尖晶石型锂锰氧化物和锂锰氧化物的混合正极活性物质，因此能够提高其稳定性。 此外，可以实现具有大的可用SOC面积和改善的稳定性的高容量电池，而不会由于SOC区域中的快速电压下降而导致输出不足。

    Method of programming a flash memory cell
    3.
    发明授权
    Method of programming a flash memory cell 失效
    编程闪存单元的方法

    公开(公告)号：US06392929B1

    公开(公告)日：2002-05-21

    申请号：US09721935

    申请日：2000-11-27

    申请人： Min Kyu Kim ,  Sheung Hee Park ,  Ju Yeab Lee ,  Tae Kyu Kim

    发明人： Min Kyu Kim ,  Sheung Hee Park ,  Ju Yeab Lee ,  Tae Kyu Kim

    IPC分类号： G11C1604

    CPC分类号： G11C16/12

    摘要： There is disclosed a method of programming a flash memory cell, which is performed applying a given voltage a gate and a drain and maintaining a source and a substrate at a ground potential. The method variably applies a given voltage, with two or more steps, to one of the gate and drain terminals while applying a given voltage to the other of the gate and drain terminals, thus reducing the programming current per cell. Accordingly, the present invention can improve reliability and throughput of the flash memory cell.

    摘要翻译： 公开了一种对闪存单元进行编程的方法，该闪速存储单元是施加给定电压的栅极和漏极，并将源极和衬底保持在地电位。 该方法将施加给栅极和漏极端子的给定电压的给定电压可变地施加到栅极和漏极端子中的两个或更多个步骤，从而减小每个单元的编程电流。 因此，本发明可以提高闪存单元的可靠性和吞吐量。

    Key system of lock
    7.
    发明授权
    Key system of lock 有权

    公开(公告)号：US11499340B1

    公开(公告)日：2022-11-15

    申请号：US17885818

    申请日：2022-08-11

    申请人： Jung Kyu Kim

    发明人： Jung Kyu Kim

    IPC分类号： E05B27/00 ,  E05B19/00 ,  E05B27/10 ,  E05B27/02

    摘要： A key system of a lock having a high peaking difficulty when picking is tried by a picking tool, includes three or more rectangular holes formed between pin holes of an inner case to insert rectangular pins, where each of the rectangular pin includes a side bar insertion groove and a fake groove formed to be spaced apart from the side bar insertion groove at an interval to raise the degree of picking difficulty. A quadrangular pin is inserted into the rectangular hole located in the middle among the rectangular holes formed in the inner case to be inserted into the hole formed in an outer case. The side on which the quadrangular pin is located has an escape groove to accommodate the quadrangular pin.

    PROVIDING METHOD AND DEVICE OF INTERACTIVE VIRTUAL REALITY CONTENTS
    8.
    发明申请
    PROVIDING METHOD AND DEVICE OF INTERACTIVE VIRTUAL REALITY CONTENTS 有权

    公开(公告)号：US20210375024A1

    公开(公告)日：2021-12-02

    申请号：US17235301

    申请日：2021-04-20

    申请人： Dong Kyu KIM ,  Sung CHOI ,  WON-IL KIM ,  VISION VR INC.

    发明人： Dong Kyu KIM ,  WON-IL KIM

    IPC分类号： G06T13/80 ,  G06F3/0482 ,  G06T13/40

    摘要： Provided are a method and device for providing interactive virtual reality content capable of increasing user immersion by naturally connecting an idle image to a branched image. The method includes providing an idle image including options, wherein an actor in the idle image performs a standby operation, while the actor performs the standby operation, receiving a user selection for an option, providing a connection image, and providing a corresponding branched image according to the selection of the user, wherein a portion of the actor in the connection image is processed by computer graphics, and the actor performs a connection operation so that a first posture of the actor at a time point at which the selection is received is smoothly connected to a second posture of the actor at a start time point of the branched image.

    Methods of fabricating semiconductor device
    9.
    发明授权
    Methods of fabricating semiconductor device 有权

    公开(公告)号：US10431459B2

    公开(公告)日：2019-10-01

    申请号：US15668689

    申请日：2017-08-03

    申请人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

    发明人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

    IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/687

    摘要： An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

    Ion beam etching devices
    10.
    发明授权
    Ion beam etching devices 有权

    公开(公告)号：US10403473B2

    公开(公告)日：2019-09-03

    申请号：US15198416

    申请日：2016-06-30

    申请人： Han-Na Cho ,  Jong-Kyu Kim ,  Hyuk Kim ,  Jongchul Park

    发明人： Han-Na Cho ,  Jong-Kyu Kim ,  Hyuk Kim ,  Jongchul Park

    IPC分类号： H01J37/32

    摘要： An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.