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    INTEGRATED CIRCUIT CAPACITOR STRUCTURE
    1.
    发明申请
    INTEGRATED CIRCUIT CAPACITOR STRUCTURE 审中-公开
    集成电路电容器结构

    公开(公告)号：US20070072319A1

    公开(公告)日：2007-03-29

    申请号：US11559317

    申请日：2006-11-13

    申请人： Jeong-Hoon AHN ,  Kyungtae LEE ,  Mu-Kyung JUNG ,  Yong-Jun LEE

    发明人： Jeong-Hoon AHN ,  Kyungtae LEE ,  Mu-Kyung JUNG ,  Yong-Jun LEE

    IPC分类号： H01L21/66 ,  H01L21/331 ,  G01R31/26

    CPC分类号： H01L28/55 ,  H01L21/76895 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/1085 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

    摘要翻译： 本发明的实施例包括具有高电容的MIM电容器，其可以在没有影响现有技术的问题的情况下被制造。 这种电容器包括上电极，下电极和位于上电极和下电极之间的电介质层。 可以将第一电压施加到上电极，并且可以将不同于第一电压的第二电压施加到下电极。 将第一电压施加到上电极的线层位于与下电极相同的水平或比下电极低的水平位置。