公开(公告)号：US20090068803A1

公开(公告)日：2009-03-12

申请号：US11852853

申请日：2007-09-10

申请人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

发明人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

IPC分类号： H01L21/337

CPC分类号： H01L29/8083 ,  H01L29/0692 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/6606 ,  H01L29/66909

摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.

摘要翻译： 公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。 一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。 即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

公开(公告)号：US08102012B2

公开(公告)日：2012-01-24

申请号：US12426008

申请日：2009-04-17

申请人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

发明人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

IPC分类号： H01L27/088

CPC分类号： H01L29/8083 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/8122

摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

摘要翻译： 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子，漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

公开(公告)号：US07763506B2

公开(公告)日：2010-07-27

申请号：US11852853

申请日：2007-09-10

申请人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

发明人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

IPC分类号： H01L21/337

CPC分类号： H01L29/8083 ,  H01L29/0692 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/6606 ,  H01L29/66909

摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.

摘要翻译： 公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。 一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。 即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

公开(公告)号：US20100264467A1

公开(公告)日：2010-10-21

申请号：US12426008

申请日：2009-04-17

申请人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

发明人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

IPC分类号： H01L29/812

CPC分类号： H01L29/8083 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/8122

摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

摘要翻译： 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子，漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。