公开(公告)号：US08102012B2

公开(公告)日：2012-01-24

申请号：US12426008

申请日：2009-04-17

申请人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

发明人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

IPC分类号： H01L27/088

CPC分类号： H01L29/8083 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/8122

摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

摘要翻译： 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子，漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

公开(公告)号：US20100264467A1

公开(公告)日：2010-10-21

申请号：US12426008

申请日：2009-04-17

申请人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

发明人： Dethard Peters ,  Peter Friedrichs ,  Rudolf Elpelt ,  Larissa Wehrhahn-Kilian ,  Michael Treu ,  Roland Rupp

IPC分类号： H01L29/812

CPC分类号： H01L29/8083 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/8122

摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

摘要翻译： 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子，漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

公开(公告)号：US20090068803A1

公开(公告)日：2009-03-12

申请号：US11852853

申请日：2007-09-10

申请人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

发明人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

IPC分类号： H01L21/337

CPC分类号： H01L29/8083 ,  H01L29/0692 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/6606 ,  H01L29/66909

摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.

摘要翻译： 公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。 一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。 即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

公开(公告)号：US07763506B2

公开(公告)日：2010-07-27

申请号：US11852853

申请日：2007-09-10

申请人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

发明人： Michael Treu ,  Roland Rupp ,  Heinz Mitlehner ,  Rudolf Elpelt ,  Peter Friedrichs ,  Larissa Wehrhahn-Kilian

IPC分类号： H01L21/337

CPC分类号： H01L29/8083 ,  H01L29/0692 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/6606 ,  H01L29/66909

摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.

摘要翻译： 公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。 一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。 即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

公开(公告)号：US20090078971A1

公开(公告)日：2009-03-26

申请号：US11858264

申请日：2007-09-20

申请人： Michael Treu ,  Roland Rupp ,  Rudolf Elpelt

发明人： Michael Treu ,  Roland Rupp ,  Rudolf Elpelt

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/808 ,  H01L21/337

CPC分类号： H01L29/7395 ,  H01L29/0696 ,  H01L29/0843 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66909 ,  H01L29/8083

摘要： A semiconductor device with structured current spread region and method is disclosed. One embodiment provides a drift portion of a first conductivity type, a current spread portion of the first conductivity type and first portions of the first conductivity type. The current spread portion and the first portions are arranged in a first plane on the drift portion, wherein the current spread portion surrounds at least partially the first portions. The semiconductor body further includes spaced apart body regions of a second conductivity type which are arranged on the current spread portion. Further, the doping concentration of the current spread portion is higher than the doping concentrations of the drift portion and of the first portions.

摘要翻译： 公开了一种具有结构化电流扩展区域和方法的半导体器件。 一个实施例提供第一导电类型的漂移部分，第一导电类型的电流扩展部分和第一导电类型的第一部分。 电流扩展部分和第一部分布置在漂移部分上的第一平面中，其中电流扩展部分至少部分地围绕第一部分。 半导体本体还包括布置在电流扩展部分上的间隔开的第二导电类型的主体区域。 此外，电流扩展部分的掺杂浓度高于漂移部分和第一部分的掺杂浓度。

公开(公告)号：US07772621B2

公开(公告)日：2010-08-10

申请号：US11858264

申请日：2007-09-20

申请人： Michael Treu ,  Roland Rupp ,  Rudolf Elpelt

发明人： Michael Treu ,  Roland Rupp ,  Rudolf Elpelt

IPC分类号： H01L29/78

CPC分类号： H01L29/7395 ,  H01L29/0696 ,  H01L29/0843 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66909 ,  H01L29/8083

摘要： A semiconductor device with structured current spread region and method is disclosed. One embodiment provides a drift portion of a first conductivity type, a current spread portion of the first conductivity type and first portions of the first conductivity type. The current spread portion and the first portions are arranged in a first plane on the drift portion, wherein the current spread portion surrounds at least partially the first portions. The semiconductor body further includes spaced apart body regions of a second conductivity type which are arranged on the current spread portion. Further, the doping concentration of the current spread portion is higher than the doping concentrations of the drift portion and of the first portions.

摘要翻译： 公开了一种具有结构化电流扩展区域和方法的半导体器件。 一个实施例提供第一导电类型的漂移部分，第一导电类型的电流扩展部分和第一导电类型的第一部分。 电流扩展部分和第一部分布置在漂移部分上的第一平面中，其中电流扩展部分至少部分地围绕第一部分。 半导体本体还包括布置在电流扩展部分上的间隔开的第二导电类型的主体区域。 此外，电流扩展部分的掺杂浓度高于漂移部分和第一部分的掺杂浓度。

公开(公告)号：US07745273B2

公开(公告)日：2010-06-29

申请号：US11830542

申请日：2007-07-30

申请人： Michael Treu ,  Roland Rupp ,  Michael Rueb ,  Rudolf Elpelt

发明人： Michael Treu ,  Roland Rupp ,  Michael Rueb ,  Rudolf Elpelt

IPC分类号： H01L21/337 ,  H01L21/425

CPC分类号： H01L29/66068 ,  H01L21/0465 ,  H01L29/1029 ,  H01L29/66909 ,  H01L29/8083

摘要： A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.

摘要翻译： 一种半导体器件的制造方法。 该方法包括提供导电类型的半导体本体，其中半导体主体包括第一表面。 在半导体本体中形成至少一个第二导电类型的掩埋区域，并且至少在第二导电类型的表面区域形成在半导体本体的第一表面处，其中形成掩埋区域和表面区域使得 它们彼此间隔开。 埋入区域通过深度注入第二导电类型的第一掺杂剂形成。

公开(公告)号：US20090032848A1

公开(公告)日：2009-02-05

申请号：US11830542

申请日：2007-07-30

申请人： Michael Treu ,  Roland Rupp ,  Michael Rueb ,  Rudolf Elpelt

发明人： Michael Treu ,  Roland Rupp ,  Michael Rueb ,  Rudolf Elpelt

IPC分类号： H01L29/808 ,  H01L21/266 ,  H01L21/337

CPC分类号： H01L29/66068 ,  H01L21/0465 ,  H01L29/1029 ,  H01L29/66909 ,  H01L29/8083

摘要： A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.

摘要翻译： 一种半导体器件的制造方法。 该方法包括提供导电类型的半导体本体，其中半导体主体包括第一表面。 在半导体本体中形成至少一个第二导电类型的掩埋区域，并且至少在第二导电类型的表面区域形成在半导体本体的第一表面处，其中形成掩埋区域和表面区域使得 它们彼此间隔开。 埋入区域通过深度注入第二导电类型的第一掺杂剂形成。

公开(公告)号：US08772140B2

公开(公告)日：2014-07-08

申请号：US13383593

申请日：2010-07-12

申请人： Rudolf Elpelt ,  Peter Friedrichs

发明人： Rudolf Elpelt ,  Peter Friedrichs

IPC分类号： H01L21/00 ,  H01L29/15

CPC分类号： H01L29/7802 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/8083 ,  H01L29/872

摘要： A unipolar semiconductor component having a drift layer is produced by forming the drift layer with a continuously decreasing concentration of a charge carrier doping along the growth direction of the drift layer by way of epitaxial precipitation of the material of the drift layer, which comprises at least one wide band gap material. By using silicon carbide for the drift layer formed by the epitaxial precipitation, a subsequent change of the continuously decreasing concentration of the charge carrier doping due to a diffusion of the dopant atoms in downstream processes is suppressed. The production method can be used in particular to implement a unipolar semiconductor component comprising a drift layer, which component has an advantageous ratio of a comparatively high reverse bias voltage with relatively low forward losses, in a simple and/or cost-effective manner. The unipolar semiconductor component can be an active or passive semiconductor component.

摘要翻译： 具有漂移层的单极半导体部件通过以漂移层的材料的外延沉淀形成漂移层，沿着漂移层的生长方向掺杂电荷载流子的浓度不断降低而形成，该漂移层至少包括 一个宽带隙材料。 通过使用碳化硅作为通过外延沉淀形成的漂移层，由于掺杂剂原子在下游工艺中的扩散而导致的电荷载流子掺杂的连续降低浓度的随后变化被抑制。 该制造方法特别可以以简单和/或成本有效的方式实现包括漂移层的单极半导体元件，该元件具有相对较高的反向偏置电压和相对低的正向损耗的有利比率。 单极半导体元件可以是有源或无源半导体元件。

公开(公告)号：US07071503B2

公开(公告)日：2006-07-04

申请号：US10950027

申请日：2004-09-24

申请人： Karl Dohnke ,  Rudolf Elpelt ,  Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schörner

发明人： Karl Dohnke ,  Rudolf Elpelt ,  Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schörner

IPC分类号： H01L29/80

CPC分类号： H01L29/0619 ,  H01L29/8083

摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.

摘要翻译： 用于控制和切换电流的半导体结构具有开关元件和边缘元件。 开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域 到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。 边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上 边缘区域。