公开(公告)号：US5142437A

公开(公告)日：1992-08-25

申请号：US714682

申请日：1991-06-13

申请人： Lee Kammerdiner ,  Maria Huffman ,  Manoochehr Golabi-Khoozani

发明人： Lee Kammerdiner ,  Maria Huffman ,  Manoochehr Golabi-Khoozani

IPC分类号： H01G4/33 ,  H01G4/008 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01G4/008 ,  H01L28/75 ,  H01L28/55 ,  Y10T29/435

摘要： A ferroelectric capacitor for an integrated circuit includes a stack formed by a layer of a noble metal, a layer of a conducting oxide, a layer of a ferroelectric material, another layer of a conducting oxide and another layer of a noble metal. The capacitor can also have another layer of conducting oxide located over the top layer of noble metal and below the first layer of the noble metal. A method of forming the same through establishing one layer over the other and annealing each layer is also disclosed.

公开(公告)号：US5800683A

公开(公告)日：1998-09-01

申请号：US861674

申请日：1997-05-22

申请人： Lee Kammerdiner ,  Tom Davenport ,  Domokos Hadnagy

发明人： Lee Kammerdiner ,  Tom Davenport ,  Domokos Hadnagy

IPC分类号： C23C14/08 ,  H01L21/316 ,  C23C14/40

CPC分类号： H01L21/31691 ,  C23C14/088

摘要： A lead zirconate titanate ferroelectric film used as the dielectric layer in a ferroelectric capacitor is doped with calcium and/or strontium, and the lead composition selected to improve data retention performance. The chemical formula for the ferroelectric film is: (Pb.sub.v Ca.sub.w Sr.sub.x La.sub.y)(Zr.sub.z Ti.sub.(1-z))O.sub.3 ; wherein v is ideally between 0.9 and 1.3; w is ideally between 0 and 0.1; x is ideally between 0 and 0.1; y is ideally between 0 and 0.1, and z is ideally between 0 and 0.9. In addition, the chemical composition of the ferroelectric film is further specified in that the measured opposite state charge at a specific time and temperature of the ferroelectric capacitor is greater than eight micro-Coulombs per square centimeter, and the rate of imprint degradation is less than fifteen percent per decade. The method for making the ferroelectric film as the dielectric layer in a ferroelectric capacitor includes sputtering onto a bottom electrode from a target comprising lead zirconate titanate doped with the combination of or subcombinations of calcium, strontium, and lanthanum to a film thickness between 750 Angstroms and 5000 Angstroms. A top electrode is subsequently formed, wherein the top and bottom electrodes are typically noble metals such as platinum. The resultant ferroelectric capacitor is coupled to an integrated MOS transistor to form a ferroelectric memory cell with improved retention performance.

摘要翻译： 用作铁电电容器中的电介质层的锆钛酸铅铁电体膜掺杂有钙和/或锶，并且选择铅组分以改善数据保留性能。 铁电薄膜的化学式为：（PbvCawSrxLay）（ZrzTi（1-z））O3; 其中v理想地在0.9和1.3之间; w理想地在0和0.1之间; x理想地在0和0.1之间; y理想地在0和0.1之间，z理想地在0和0.9之间。 此外，强电介质膜的化学成分进一步规定为，在铁电电容器的特定时间和温度下测量的相对电荷大于每平方厘米8微克仑，并且压印劣化速率小于 十年十五。 在铁电电容器中制造铁电体膜作为电介质层的方法包括从包含掺杂有钙，锶和镧的组合或次组合的锆钛酸铅的靶材溅射到底部电极上，膜厚度为750埃至 5000埃。 随后形成顶部电极，其中顶部和底部电极通常是贵金属，例如铂。 所得的铁电电容器耦合到集成的MOS晶体管，以形成具有改进的保持性能的铁电存储器单元。

公开(公告)号：US5969935A

公开(公告)日：1999-10-19

申请号：US616856

申请日：1996-03-15

申请人： Lee Kammerdiner ,  Tom Davenport ,  Domokos Hadnagy

发明人： Lee Kammerdiner ,  Tom Davenport ,  Domokos Hadnagy

IPC分类号： C23C14/08 ,  H01L21/316 ,  H01G4/06

CPC分类号： H01L21/31691 ,  C23C14/088

摘要： A lead zirconate titanate ferroelectric film used as the dielectric layer in a ferroelectric capacitor is doped with calcium and/or strontium, and the lead composition selected to improve data retention performance. The chemical formula for the ferroelectric film is: (Pb.sub.v Ca.sub.w Sr.sub.x La.sub.y)(Zr.sub.z Ti.sub.(1-z))O.sub.3 ; wherein v is ideally between 0.9 and 1.3; w is ideally between 0 and 0.1; x is ideally between 0 and 0.1; y is ideally between 0 and 0.1, and z is ideally between 0 and 0.9. In addition, the chemical composition of the ferroelectric film is further specified in that the measured opposite state charge at a specific time and temperature of the ferroelectric capacitor is greater than eight micro-Coulombs per square centimeter, and the rate of imprint degradation is less than fifteen percent per decade.

摘要翻译： 用作铁电电容器中的电介质层的锆钛酸铅铁电体膜掺杂有钙和/或锶，并且选择铅组分以改善数据保留性能。 铁电薄膜的化学式为：（PbvCawSrxLay）（ZrzTi（1-z））O3; 其中v理想地在0.9和1.3之间; w理想地在0和0.1之间; x理想地在0和0.1之间; y理想地在0和0.1之间，z理想地在0和0.9之间。 此外，强电介质膜的化学成分进一步规定为，在铁电电容器的特定时间和温度下测量的相对电荷大于每平方厘米8微克仑，并且压印劣化速率小于 十年十五。

公开(公告)号：US4835118A

公开(公告)日：1989-05-30

申请号：US29192

申请日：1987-03-23

申请人： Robert E. Jones, Jr. ,  Lee Kammerdiner ,  Michael R. Reeder

发明人： Robert E. Jones, Jr. ,  Lee Kammerdiner ,  Michael R. Reeder

IPC分类号： H01L21/263 ,  H01L21/268 ,  H01L21/768 ,  H01L23/525

CPC分类号： H01L23/5254 ,  H01L21/2636 ,  H01L21/268 ,  H01L21/76888 ,  H01L2924/0002 ,  Y10S438/934

摘要： A process of manufacturing selectively restructurable conductive links between circuit elements and corresponding spare elements on a semiconductor. A continuous green light laser directed at a non-conductive amorphous region in the links causes the region to recrystallize. This makes the link electrically conductive thereby joining the circuit elements to a corresponding spare element on the semiconductor. The method permits for high density packing of circuit elements and creates a link without producing bulk material movement.

摘要翻译： 在半导体上在电路元件和对应的备用元件之间制造选择性可重构的导电链路的过程。 指向链节中的非导电非晶区域的连续绿光激光使得该区域再结晶。 这使得链路导电，从而将电路元件连接到半导体上的对应备用元件。 该方法允许电路元件的高密度包装并且产生连接而不产生散装材料移动。