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公开(公告)号：US06417112B1
公开(公告)日：2002-07-09
申请号：US09343532
申请日：1999-06-30
IPC分类号： H01L21302
CPC分类号： C09K13/00 , C23G1/061 , C23G1/18 , C23G1/20 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/76814 , H01L21/76838 , Y10S438/963
摘要： A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of UISI manufacturing in a dual damascene structure.
摘要翻译： 提供了基于胆碱化合物（例如氢氧化胆碱）的新的清洁化学品，以解决双镶嵌制造的问题。 双镶嵌结构底部的刻蚀终止无机层保护铜的底层互连，并允许更好的清洁。 使用利用蚀刻停止层的两步蚀刻工艺来实现双镶嵌结构中UISI制造的要求。
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公开(公告)号：US07157415B2
公开(公告)日：2007-01-02
申请号：US10007134
申请日：2001-12-04
IPC分类号： C23G5/28
CPC分类号： C23C18/06 , C11D7/3218 , C11D7/3281 , C11D7/34 , C23C18/08 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/02071 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76838 , H01L21/76894 , H05K3/105 , Y10S148/903 , Y10T428/12493 , Y10T428/12903
摘要： A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.
摘要翻译： 提供了基于胆碱化合物（例如氢氧化胆碱）的新的清洁化学品，以解决双镶嵌制造的问题。 双镶嵌结构底部的刻蚀终止无机层保护铜的底层互连，并允许更好的清洁。 使用利用蚀刻停止层的两步蚀刻工艺用于实现双镶嵌结构中ULSI制造的要求。
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