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公开(公告)号：US07157415B2
公开(公告)日：2007-01-02
申请号：US10007134
申请日：2001-12-04
IPC分类号： C23G5/28
CPC分类号： C23C18/06 , C11D7/3218 , C11D7/3281 , C11D7/34 , C23C18/08 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/02071 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76838 , H01L21/76894 , H05K3/105 , Y10S148/903 , Y10T428/12493 , Y10T428/12903
摘要： A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.
摘要翻译： 提供了基于胆碱化合物（例如氢氧化胆碱）的新的清洁化学品，以解决双镶嵌制造的问题。 双镶嵌结构底部的刻蚀终止无机层保护铜的底层互连，并允许更好的清洁。 使用利用蚀刻停止层的两步蚀刻工艺用于实现双镶嵌结构中ULSI制造的要求。
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公开(公告)号：US06417112B1
公开(公告)日：2002-07-09
申请号：US09343532
申请日：1999-06-30
IPC分类号： H01L21302
CPC分类号： C09K13/00 , C23G1/061 , C23G1/18 , C23G1/20 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/76814 , H01L21/76838 , Y10S438/963
摘要： A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of UISI manufacturing in a dual damascene structure.
摘要翻译： 提供了基于胆碱化合物（例如氢氧化胆碱）的新的清洁化学品，以解决双镶嵌制造的问题。 双镶嵌结构底部的刻蚀终止无机层保护铜的底层互连，并允许更好的清洁。 使用利用蚀刻停止层的两步蚀刻工艺来实现双镶嵌结构中UISI制造的要求。
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3.发明授权Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials 有权在石英涂层多晶硅和其他材料的清洗中使用双胆碱和三胆碱的方法公开(公告)号：US07135445B2
公开(公告)日：2006-11-14
申请号：US10689657
申请日：2003-10-22
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/426
摘要： A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.
摘要翻译： 提供了基于双胆碱和三胆碱化合物（例如它们的氢氧化物）的新的清洁化学品，以便解决光刻胶和助熔剂的去除，同时最小化衬底的任何蚀刻。
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4.发明授权Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing 失效当使用氟化物化学物质去除半导体加工中的蚀刻后残留物时，减少氧化物损失公开(公告)号：US07479474B2
公开(公告)日：2009-01-20
申请号：US10836259
申请日：2004-05-03
申请人： Mihaela Cernat , Shihying Lee
发明人： Mihaela Cernat , Shihying Lee
IPC分类号： C09K13/08
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/3209 , C11D7/5004 , C11D11/0047 , C23F11/141 , C23F11/1676 , C23F11/173 , C23G1/061 , C23G1/066
摘要： A novel cleaning composition used for post-etch resist residue removal is disclosed. In contrast to the conventional cleaning solutions based on fluoride chemistries, the present invention can significantly reduce the oxide loss resulting from the exfoliation, while still providing an excellent cleaning efficiency.
摘要翻译： 公开了用于蚀刻后抗蚀剂残渣去除的新型清洁组合物。 与基于氟化物化学的常规清洁溶液相比，本发明可以显着降低由剥离引起的氧化物损失，同时仍然提供优异的清洁效率。
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5.发明授权Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal 失效包含羟胺衍生物的清洁组合物和使用它们用于除去残渣的方法公开(公告)号：US07144848B2
公开(公告)日：2006-12-05
申请号：US10689620
申请日：2003-10-22
申请人： De-Ling Zhou , Jing Qiao , Shihying Lee , Bakul P. Patel , Becky Min Hon
发明人： De-Ling Zhou , Jing Qiao , Shihying Lee , Bakul P. Patel , Becky Min Hon
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D3/2058 , C11D3/2065 , C11D3/2086 , C11D3/30 , C11D3/3427 , C11D3/3472 , C11D3/43 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C11D11/0047 , C11D11/0052 , C23G1/103 , C23G1/205 , G03F7/425 , H01L21/02063 , H01L21/31133 , H01L21/76814 , H01L21/76885
摘要： The present invention is directed to resist and etching residue removing compositions containing at least one nucleophilic amine compound possessing reduction and oxidation potentials, a two-carbon atom linkage alkanolamine compound, and optionally water and/or one or more corrosion inhibitors. The compositions may be substantially free of hydroxylamine, polar organic solvents, water, corrosion inhibitors, or a combination thereof. The compositions are useful in processes for removing resists and etching residue from metal or metal alloy substrates or substrate layers used in micro-circuitry fabrication.
摘要翻译： 本发明涉及抗蚀和蚀刻含有至少一种具有还原和氧化电位的亲核胺化合物，二碳原子键链烷醇胺化合物和任选的水和/或一种或多种腐蚀抑制剂的残余物去除组合物。 组合物可以基本上不含羟胺，极性有机溶剂，水，腐蚀抑制剂或其组合。 该组合物可用于从用于微电路制造的金属或金属合金基底或基底层去除抗蚀剂和蚀刻残留物的方法中。
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6.发明申请Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing 失效当使用氟化物化学物质去除半导体加工中的蚀刻后残留物时，减少氧化物损失公开(公告)号：US20050245409A1
公开(公告)日：2005-11-03
申请号：US10836259
申请日：2004-05-03
申请人： Mihaela Cernat , Shihying Lee
发明人： Mihaela Cernat , Shihying Lee
IPC分类号： C11D1/00 , C11D7/08 , C11D7/32 , C11D7/50 , C11D11/00 , C23F11/14 , C23F11/167 , C23F11/173 , C23G1/06 , H01L21/02 , H01L21/306 , H01L21/311
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/3209 , C11D7/5004 , C11D11/0047 , C23F11/141 , C23F11/1676 , C23F11/173 , C23G1/061 , C23G1/066
摘要： A novel cleaning composition used for post-etch resist residue removal is disclosed. In contrast to the conventional cleaning solutions based on fluoride chemistries, the present invention can significantly reduce the oxide loss resulting from the exfoliation, while still providing an excellent cleaning efficiency.
摘要翻译： 公开了用于蚀刻后抗蚀剂残渣去除的新型清洁组合物。 与基于氟化物化学的常规清洁溶液相比，本发明可以显着降低由剥离引起的氧化物损失，同时仍然提供优异的清洁效率。
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