公开(公告)号：US4916089A

公开(公告)日：1990-04-10

申请号：US240784

申请日：1988-09-02

Applicant: Jaap Van Suchtelen ,  Lodevicus J. Giling ,  Josephus E. M. Hogenkamp

Inventor： Jaap Van Suchtelen ,  Lodevicus J. Giling ,  Josephus E. M. Hogenkamp

IPC: C30B23/08 ,  B01J4/02 ,  B01L99/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/203 ,  H01L21/205

CPC classification number: C23C16/45523 ,  B01J4/02 ,  B01L3/0289 ,  C23C16/45561 ,  C30B25/14 ,  Y10S148/006 ,  Y10S148/057 ,  Y10S148/11 ,  Y10S148/169 ,  Y10S438/935

Abstract: In order, in the epitaxial production of semiconductor products and of articles provided with a layer, to be able to make the junction between the layers applied to the substrates atomically sharp, it is important to be able to change the gas mixture, to be introduced into a pulsed reactor or MBE reactor, rapidly, accurately and without losses in respect of quantity and of composition. To this purpose, each of the gases to be introduced into the reactor is conveyed to a separate gas pipette and thereafter the content of the gas pipette is cyclically passed, by means of a pressure differential, into the pulse reactor, with the composition of the mixture being changed per one or more cycles.