公开(公告)号：US06475919B2

公开(公告)日：2002-11-05

申请号：US09753589

申请日：2001-01-03

Applicant: Lothar Brencher ,  Maik Stegememann ,  Uwe Rudolph

Inventor： Lothar Brencher ,  Maik Stegememann ,  Uwe Rudolph

IPC: H01L21302

CPC classification number: H01L27/1087 ,  H01L21/3081 ,  H01L21/3083

Abstract: The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first mask layer (1) and an underlying second mask layer (2) is used. A resist mask is applied to the mask layers (1, 2). The trenches are structured by etching processes, in which, in a first etching process, the first mask layer (1) is etched selectively with respect to the resist mask, and in a second etching process, the second mask layer (2) is etched selectively with respect to the first mask layer (1).

Abstract translation: 本发明涉及用于制造用于制造DRAM单元配置中的存储电容器的沟槽的方法。 在该方法中，使用具有第一掩模层（1）和下面的第二掩模层（2）的两级硬掩模。 将抗蚀剂掩模施加到掩模层（1,2）。 通过蚀刻工艺构造沟槽，其中在第一蚀刻工艺中，相对于抗蚀剂掩模选择性地蚀刻第一掩模层（1），并且在第二蚀刻工艺中，蚀刻第二掩模层（2） 选择性地相对于第一掩模层（1）。

公开(公告)号：US08404597B2

公开(公告)日：2013-03-26

申请号：US11937681

申请日：2007-11-09

Applicant: Lothar Brencher ,  Dirk Meinhold ,  Michael Hartenberger ,  Georg Seidemann ,  Wolfgang Dickenscheld

Inventor： Lothar Brencher ,  Dirk Meinhold ,  Michael Hartenberger ,  Georg Seidemann ,  Wolfgang Dickenscheld

IPC: H01L21/302

CPC classification number: H01L21/76832 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76877

Abstract: A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being different from the second etchant.

Abstract translation: 一种用于蚀刻层组件的方法，所述层组件包括夹在蚀刻层和阻挡层之间的中间层，所述方法包括使用第一蚀刻剂蚀刻所述蚀刻层的步骤，以及使用第二蚀刻剂蚀刻所述中间层的步骤 蚀刻剂 第一蚀刻剂包括相对于蚀刻层和中间层至少5:1的第一蚀刻选择性。 第二蚀刻剂包括相对于中间层和停止层至少5:1的第二蚀刻选择性。 第一蚀刻剂不同于第二蚀刻剂。

公开(公告)号：US20090124089A1

公开(公告)日：2009-05-14

申请号：US11937681

申请日：2007-11-09

Applicant: Lothar Brencher

Inventor： Lothar Brencher

IPC: H01L21/308 ,  H01L21/30

CPC classification number: H01L21/76832 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76877

Abstract: A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being different from the second etchant.

Abstract translation: 一种用于蚀刻层组件的方法，所述层组件包括夹在蚀刻层和停止层之间的中间层，所述方法包括使用第一蚀刻剂蚀刻所述蚀刻层的步骤，以及使用第二蚀刻剂蚀刻所述中间层的步骤 蚀刻剂 第一蚀刻剂包括相对于蚀刻层和中间层至少5:1的第一蚀刻选择性。 第二蚀刻剂包括相对于中间层和停止层至少5:1的第二蚀刻选择性。 第一蚀刻剂不同于第二蚀刻剂。

公开(公告)号：US20050181604A1

公开(公告)日：2005-08-18

申请号：US11030587

申请日：2005-01-06

Applicant: Hans-Peter Sperlich ,  Lothar Brencher ,  Jens Bachmann

Inventor： Hans-Peter Sperlich ,  Lothar Brencher ,  Jens Bachmann

IPC: H01L21/302 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/44

CPC classification number: H01L21/32139 ,  H01L21/02115 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/32136

Abstract: A method for structuring metal is disclosed. At least one corrosion-intensive metal layer is deposited on an Si substrate by means of deposition method. An etching mask is then produced on the corrosion-intensive metal layer by photolithographic patterning processes using a resist. The metal layer can then be patterned through the etching mask by means of etching, preferably by plasma etching.

Abstract translation: 公开了一种用于构造金属的方法。 通过沉积方法将至少一个腐蚀密集的金属层沉积在Si衬底上。 然后通过使用抗蚀剂的光刻图案化工艺在腐蚀密集的金属层上产生蚀刻掩模。 然后可以通过蚀刻，优选通过等离子体蚀刻，通过蚀刻掩模来图案化金属层。