公开(公告)号：US07741820B2

公开(公告)日：2010-06-22

申请号：US12203078

申请日：2008-09-02

申请人： Hsiang Lin Huang ,  Kent Huang ,  Mao Chuan Chien ,  Shun Hau Kao

发明人： Hsiang Lin Huang ,  Kent Huang ,  Mao Chuan Chien ,  Shun Hau Kao

IPC分类号： G05F1/59

CPC分类号： H02M3/156 ,  H02M1/32

摘要： A PWM controller for controlling a switching voltage regulator comprises a first comparator, a second comparator and a third comparator. The first comparator is configured to detect voltages of a first node and a second node so as to determine whether to stop the PWM controller. The PWM controller is stopped if a first potential is lower than a threshold, and the first potential derives from the voltage of the first node by a level shift of a first voltage difference. The second comparator is configured to detect the voltage of the first node and then to compare the voltage with a power reference voltage so as to determine whether the PWM controller receives necessary power. The third comparator is configured to compare the voltage of the second node with an enable reference voltage so as to determine whether to disable the PWN controller.

摘要翻译： 用于控制开关电压调节器的PWM控制器包括第一比较器，第二比较器和第三比较器。 第一比较器被配置为检测第一节点和第二节点的电压，以便确定是否停止PWM控制器。 如果第一电位低于阈值，则PWM控制器停止，并且第一电位从第一节点的电压导出第一电压差的电平偏移。 第二比较器被配置为检测第一节点的电压，然后将电压与功率参考电压进行比较，以便确定PWM控制器是否接收必要的功率。 第三比较器被配置为将第二节点的电压与使能参考电压进行比较，以便确定是否禁用PWN控制器。

公开(公告)号：US20100019747A1

公开(公告)日：2010-01-28

申请号：US12235877

申请日：2008-09-23

申请人： SHUN HAU KAO ,  MAO CHUAN CHIEN

发明人： SHUN HAU KAO ,  MAO CHUAN CHIEN

IPC分类号： G05F1/56

CPC分类号： G05F1/56

摘要： A low dropout regulator comprises a depletion mode NMOS transistor, a switch and an error amplifier. The source electrode of the depletion type NMOS transistor is coupled to a feedback circuit. The switch, controlled by a control signal, connects a supply voltage to the drain electrode of the depletion mode NMOS transistor. The non-inverting input terminal of the error amplifier is coupled to a reference voltage. The output terminal of the error amplifier is coupled to the gate electrode of the depletion mode NMOS transistor. The inverting input terminal of the error amplifier is coupled to the feedback circuit.

摘要翻译： 低压降稳压器包括耗尽型NMOS晶体管，开关和误差放大器。 耗尽型NMOS晶体管的源电极耦合到反馈电路。 由控制信号控制的开关将电源电压连接到耗尽型NMOS晶体管的漏电极。 误差放大器的非反相输入端耦合到参考电压。 误差放大器的输出端耦合到耗尽型NMOS晶体管的栅电极。 误差放大器的反相输入端耦合到反馈电路。

公开(公告)号：US07622902B1

公开(公告)日：2009-11-24

申请号：US12272719

申请日：2008-11-17

申请人： Shun-Hau Kao ,  Mao-Chuan Chien

发明人： Shun-Hau Kao ,  Mao-Chuan Chien

IPC分类号： G05F1/40

CPC分类号： G05F1/575

摘要： An LDO with over-current protection includes a first and a second P-type transistor, a sensing resistor, a comparator, and an error amplifier. The channel aspect ratio of the first P-type transistor is much higher than that of the second P-type transistor. The first P-type transistor generates output voltage source according to input voltage source and current control signal. The sensing resistor is coupled among the input voltage source, the second P-type transistor, and the comparator, providing a sensing voltage. The comparator generates a current limiting signal according to first reference voltage and the sensing voltage. When the current limiting signal enables the error amplifier, the error amplifier adjusts voltage of the current control signal according to second reference voltage and voltage divided from the output voltage source; when the current limiting signal disables the error amplifier, voltage of the current control signal is not adjusted.

摘要翻译： 具有过电流保护的LDO包括第一和第二P型晶体管，感测电阻器，比较器和误差放大器。 第一P型晶体管的沟道纵横比远高于第二P型晶体管的沟道纵横比。 第一个P型晶体管根据输入电压源和电流控制信号产生输出电压源。 感测电阻器耦合在输入电压源，第二P型晶体管和比较器之间，提供感测电压。 比较器根据第一参考电压和感测电压产生限流信号。 当限流信号使能误差放大器时，误差放大器根据从输出电压源划分的第二参考电压和电压来调节电流控制信号的电压; 当限流信号禁用误差放大器时，不调整电流控制信号的电压。

公开(公告)号：US20090189661A1

公开(公告)日：2009-07-30

申请号：US12102314

申请日：2008-04-14

申请人： Shun Hau KAO ,  Kent HUANG ,  Hsiang Lin HUANG ,  Mao Chuan CHIEN

发明人： Shun Hau KAO ,  Kent HUANG ,  Hsiang Lin HUANG ,  Mao Chuan CHIEN

IPC分类号： H03K7/08

CPC分类号： H03K17/0822 ,  H02M1/32 ,  H02M1/36 ,  H02M3/1588 ,  H03K17/22 ,  H03K19/017545 ,  H03K19/1732 ,  H03K2217/0081 ,  Y02B70/1466

摘要： A pulse width modulation controller comprises a disabling unit, a level sensor and an over current protector. These three devices are all coupled to a multi-function node for accomplishing a disable function, input level sensing, and over-current protection, respectively.

摘要翻译： 脉宽调制控制器包括禁用单元，电平传感器和过电流保护器。 这三个器件都耦合到多功能节点，用于分别实现禁用功能，输入电平检测和过电流保护。

公开(公告)号：US07501908B2

公开(公告)日：2009-03-10

申请号：US11730159

申请日：2007-03-29

申请人： Mao Chuan Chien ,  Yu Min Sun ,  Chu Yu Chu

发明人： Mao Chuan Chien ,  Yu Min Sun ,  Chu Yu Chu

IPC分类号： H03L1/00

CPC分类号： H03L1/022 ,  G05F3/262 ,  H03K5/08 ,  H03K5/2481

摘要： The oscillation circuit includes an output current mirror, a P-N complementary current mirror, a P-type current mirror and an N-type current mirror. The P-N complementary current mirror has the same structure as the output current mirror but has current that is only 1/k times the current of the output current mirror, wherein k is greater than 1. The P-type current mirror connects to the P-N complementary current mirror, and has current that is m times the current of the P-N complementary current mirror, where m is greater than 1. The N-type current mirror has one end connected to the P-type current mirror and another end connected to the output current mirror. The N-type current mirror has current that is n times the current of the P-type current mirror, where m × n k ≥ 1 , and n is greater than 1.

摘要翻译： 振荡电路包括输出电流镜，P-N互补电流镜，P型电流镜和N型电流镜。 PN互补电流镜具有与输出电流镜相同的结构，但具有仅为输出电流镜的电流的1 / k倍的电流，其中k大于1.P型电流镜连接到PN互补 电流镜，并且具有与PN互补电流镜的电流m倍的电流，其中m大于1.N型电流镜的一端连接到P型电流镜，另一端连接到输出 电流镜。 N型电流镜的电流是P型电流镜的电流的n倍，其中