公开(公告)号：US09376746B2

公开(公告)日：2016-06-28

申请号：US13715786

申请日：2012-12-14

申请人： Martin A. Hilkene ,  Roman Gouk ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Roman Gouk ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

IPC分类号： C23C14/48 ,  C23C14/04

CPC分类号： C23C14/5826 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/48 ,  C23C14/5873 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858

摘要： Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

摘要翻译： 本文所述的实施方案提供了用于处理具有通过印刷的氧反应性掩模将离子注入到磁性基底的磁性活性表面中的其上形成有印记的氧反应性掩模的磁性基底的方法和装置，其中离子不会减少氧 掩模的反应性，以及通过将衬底暴露于含氧等离子体来除去掩模。 掩模可以是无定形碳，将含碳离子注入到磁性活性表面中。 也可以含有氢的含碳离子可以通过活化烃气体和氢气的混合物而形成。 可以选择或调节氢气和烃气体的比例以控制离子注入。

公开(公告)号：US20110061812A1

公开(公告)日：2011-03-17

申请号：US12720926

申请日：2010-03-10

申请人： Udayan Ganguly ,  Yoshitaka Yokota ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Jose A. Marin ,  Aijit Balakrishna ,  Jacob Newman ,  Stephen C. Hickerson

发明人： Udayan Ganguly ,  Yoshitaka Yokota ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Jose A. Marin ,  Aijit Balakrishna ,  Jacob Newman ,  Stephen C. Hickerson

IPC分类号： H01L21/465

CPC分类号： H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：US20090162996A1

公开(公告)日：2009-06-25

申请号：US11963034

申请日：2007-12-21

申请人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

发明人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

IPC分类号： H01L21/263

CPC分类号： H01L21/2254 ,  H01L21/2253

摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

摘要翻译： 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

公开(公告)号：US08354035B2

公开(公告)日：2013-01-15

申请号：US12821400

申请日：2010-06-23

申请人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC分类号： B44C1/22

CPC分类号： G11B5/84 ,  G03F7/427

摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

摘要翻译： 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US20110256691A1

公开(公告)日：2011-10-20

申请号：US13168738

申请日：2011-06-24

申请人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

发明人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

IPC分类号： H01L21/322

CPC分类号： H01L21/2254 ,  H01L21/2253

摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

摘要翻译： 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

公开(公告)号：US20110104393A1

公开(公告)日：2011-05-05

申请号：US12939713

申请日：2010-11-04

申请人： Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke

发明人： Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： C23C14/04

CPC分类号： G11B5/855 ,  H01J37/321 ,  H01J37/32412

摘要： Processes and apparatus of forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate are provided. In one embodiment, a method of forming a pattern of magnetic domains on a magnetically susceptible material disposed on a substrate includes exposing a first portion of a magnetically susceptible layer to a plasma formed from a gas mixture, wherein the gas mixture includes at least a halogen containing gas and a hydrogen containing gas for a time sufficient to modify a magnetic property of the first portion of the magnetically susceptible layer exposed through a mask layer from a first state to a second state.

摘要翻译： 提供了在基板上的磁敏表面上形成包括磁性和非磁畴的图案的方法和装置。 在一个实施例中，在设置在基板上的易磁敏材料上形成磁畴图案的方法包括将磁敏感层的第一部分暴露于由气体混合物形成的等离子体，其中气体混合物至少包含卤素 含有气体和含氢气体的时间足以将通过掩模层暴露的易受敏感层的第一部分的磁特性从第一状态改变到第二状态。

公开(公告)号：US20110006034A1

公开(公告)日：2011-01-13

申请号：US12821400

申请日：2010-06-23

申请人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC分类号： G11B5/84

CPC分类号： G11B5/84 ,  G03F7/427

摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

摘要翻译： 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US07659184B2

公开(公告)日：2010-02-09

申请号：US12072495

申请日：2008-02-25

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/20

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20090280628A1

公开(公告)日：2009-11-12

申请号：US12503697

申请日：2009-07-15

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/26

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US09520267B2

公开(公告)日：2016-12-13

申请号：US14467806

申请日：2014-08-25

申请人： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

发明人： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

IPC分类号： H01J37/317 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/3172 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/3065

摘要： The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

摘要翻译： 使用偏置电压频率来控制等离子体处理中的角度离子分布。 在一个实例中，在等离子体室中产生含有气体离子的等离子体。 使用设置在等离子体护套和工件之间的孔来改变等离子体护套，使得等离子体护套在孔的上方具有形状。 产生振荡射频偏置电压并将其施加到工件保持器。 工件保持器将偏置电压施加到工件以产生相对于等离子体的工件偏置电压，以将等离子体护套上的离子吸引到工件。 偏压的孔径和频率控制离子被吸引到工件的角度。