公开(公告)号：US08871645B2

公开(公告)日：2014-10-28

申请号：US12558370

申请日：2009-09-11

申请人： Udayan Ganguly ,  Yoshita Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathan Srinivasan ,  Jacob Newman

发明人： Udayan Ganguly ,  Yoshita Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathan Srinivasan ,  Jacob Newman

IPC分类号： H01L21/311 ,  H01L27/115 ,  H01L21/67 ,  H01L21/762

CPC分类号： H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

摘要： Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

摘要翻译： 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：US20120088356A1

公开(公告)日：2012-04-12

申请号：US13227034

申请日：2011-09-07

申请人： KARTIK SANTHANAM ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  PETER I. PORSHNEV ,  SWAMINATHAN SRINIVASAN ,  SUNDAR RAMAMURTHY

发明人： KARTIK SANTHANAM ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  PETER I. PORSHNEV ,  SWAMINATHAN SRINIVASAN ,  SUNDAR RAMAMURTHY

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01L21/324 ,  H01L21/67207

摘要： An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.

摘要翻译： 一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传送室的掺杂室，所述掺杂室被配置为将掺杂元素注入或沉积在衬底的表面中或其上; 掺杂剂激活室，其耦合到所述真空衬底传送室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂元素; 以及控制器，其被配置为控制所述集成平台，所述控制器包括具有存储在其上的指令的计算机可读介质，当由所述控制器执行时，所述控制器使所述集成平台执行方法，所述方法包括：将衬底与一个或多个掺杂剂 掺杂室中的元素; 将衬底真空转移到掺杂剂活化室; 以及退火所述掺杂剂激活室中的所述衬底以激活所述掺杂元素。

公开(公告)号：US20110061810A1

公开(公告)日：2011-03-17

申请号：US12720957

申请日：2010-03-10

申请人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Johanes F. Swenberg ,  Anchuan Wang ,  Nitin K. Ingle ,  Manish Hemkar ,  Jose A. Marin

发明人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Johanes F. Swenberg ,  Anchuan Wang ,  Nitin K. Ingle ,  Manish Hemkar ,  Jose A. Marin

IPC分类号： H01L21/3065

CPC分类号： H01L21/67115 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

摘要翻译： 本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。 公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：US6091752A

公开(公告)日：2000-07-18

申请号：US40052

申请日：1998-03-17

申请人： Xiaoquang He ,  Swaminathan Srinivasan

发明人： Xiaoquang He ,  Swaminathan Srinivasan

IPC分类号： H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3413

摘要： Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner.

摘要翻译： 量子阱激光器在此制成具有预定梯度的界面，其控制在高温处理期间原子的相互扩散。 结果是量子阱和波导层的任一侧之间的可预测梯度的大的界面。 该方法是高度可控的并且以可重复的方式产生出惊人的高功率的独特结构。

公开(公告)号：US08802522B2

公开(公告)日：2014-08-12

申请号：US13190012

申请日：2011-07-25

申请人： Michael G. Ward ,  Igor V. Peidous ,  Sunny Chiang ,  Yen B. Ta ,  Andrew Darlak ,  Peter I. Porshnev ,  Swaminathan Srinivasan

发明人： Michael G. Ward ,  Igor V. Peidous ,  Sunny Chiang ,  Yen B. Ta ,  Andrew Darlak ,  Peter I. Porshnev ,  Swaminathan Srinivasan

IPC分类号： H01L29/94

CPC分类号： H01L21/823842 ,  H01J37/32412 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/78

摘要： Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.

摘要翻译： 本文提供了在基板上形成器件的方法。 在一些实施例中，在衬底上形成器件的方法可以包括提供具有设置在衬底上的部分制造的第一器件的衬底，第一器件包括第一膜堆叠，其包括第一介电层和第一高k电介质层 设置在第一电介质层的顶部; 在第一薄膜叠层顶上沉积第一金属层; 以及修改所述第一金属层的第一上表面以调整所述第一器件的第一阈值电压，其中所述第一上表面的修改不延伸穿过所述第一金属层的第一下表面。

公开(公告)号：US20120171855A1

公开(公告)日：2012-07-05

申请号：US13190012

申请日：2011-07-25

申请人： MICHAEL G. WARD ,  IGOR V. PEIDOUS ,  SUNNY CHIANG ,  YEN B. TA ,  ANDREW DARLAK ,  PETER I. PORSHNEV ,  SWAMINATHAN SRINIVASAN

发明人： MICHAEL G. WARD ,  IGOR V. PEIDOUS ,  SUNNY CHIANG ,  YEN B. TA ,  ANDREW DARLAK ,  PETER I. PORSHNEV ,  SWAMINATHAN SRINIVASAN

IPC分类号： H01L21/28

CPC分类号： H01L21/823842 ,  H01J37/32412 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/78

摘要： Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.

摘要翻译： 本文提供了在基板上形成器件的方法。 在一些实施例中，在衬底上形成器件的方法可以包括提供具有设置在衬底上的部分制造的第一器件的衬底，第一器件包括第一膜堆叠，其包括第一介电层和第一高k电介质层 设置在第一电介质层的顶部; 在第一薄膜叠层顶上沉积第一金属层; 以及修改所述第一金属层的第一上表面以调整所述第一器件的第一阈值电压，其中所述第一上表面的修改不延伸穿过所述第一金属层的第一下表面。

公开(公告)号：US20110061812A1

公开(公告)日：2011-03-17

申请号：US12720926

申请日：2010-03-10

申请人： Udayan Ganguly ,  Yoshitaka Yokota ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Jose A. Marin ,  Aijit Balakrishna ,  Jacob Newman ,  Stephen C. Hickerson

发明人： Udayan Ganguly ,  Yoshitaka Yokota ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Jose A. Marin ,  Aijit Balakrishna ,  Jacob Newman ,  Stephen C. Hickerson

IPC分类号： H01L21/465

CPC分类号： H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：US20130243971A1

公开(公告)日：2013-09-19

申请号：US13420164

申请日：2012-03-14

申请人： David Thompson ,  Pravin K. Narwankar ,  Swaminathan Srinivasan ,  Sukti Chatterjee ,  Abhilash Mayur ,  Kashif Maqsood

发明人： David Thompson ,  Pravin K. Narwankar ,  Swaminathan Srinivasan ,  Sukti Chatterjee ,  Abhilash Mayur ,  Kashif Maqsood

IPC分类号： C23C16/455 ,  C23C16/56

CPC分类号： C23C16/45551 ,  C23C16/45548 ,  C23C16/483

摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.

摘要翻译： 提供了原子层沉积装置和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。 还提供了具有细长气体注入器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

公开(公告)号：US20110065276A1

公开(公告)日：2011-03-17

申请号：US12720942

申请日：2010-03-10

申请人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Shiyu Sun

发明人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Shiyu Sun

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/76232 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：US20100062603A1

公开(公告)日：2010-03-11

申请号：US12558370

申请日：2009-09-11

申请人： Udayan Ganguly ,  Yoshita Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathan Srinivasan ,  Jacob Newman

发明人： Udayan Ganguly ,  Yoshita Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathan Srinivasan ,  Jacob Newman

IPC分类号： H01L21/311 ,  H01L21/28

CPC分类号： H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

摘要： Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

摘要翻译： 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。