-
公开(公告)号：US07457086B2
公开(公告)日：2008-11-25
申请号：US11614659
申请日：2006-12-21
申请人： Kiran V. Chatty , Robert J. Gauthier, Jr. , Mahmoud A. Mousa , Mujahid Muhammad , Christopher S. Putnam
发明人： Kiran V. Chatty , Robert J. Gauthier, Jr. , Mahmoud A. Mousa , Mujahid Muhammad , Christopher S. Putnam
CPC分类号： H01L27/0266 , H03K17/08142
摘要： Method and device for protecting against electrostatic discharge. The method includes configuring a gate of at least one upper transistor of a transistor network connected between power rails to be biased to a prescribed value, and coupling an electrostatic discharge event to a gate of a lower transistor of the transistor network. The at least one upper and at least one lower transistors of the transistor network are respectively coupled between the power rails from a higher voltage to a lower voltage.
摘要翻译： 用于防止静电放电的方法和装置。 该方法包括配置连接在电源轨之间的晶体管网络的至少一个上晶体管的栅极以被偏置到规定值，以及将静电放电事件耦合到晶体管网络的下晶体管的栅极。 晶体管网络的至少一个上部和至少一个下部晶体管分别从较高电压到较低电压耦合在电源轨之间。
-
公开(公告)号：US5980875A
公开(公告)日：1999-11-09
申请号：US835417
申请日：1997-04-09
申请人： Mahmoud A. Mousa
发明人： Mahmoud A. Mousa
摘要： Methods and preparations for overcoming problems associated with the local application of honey are disclosed. The preparations include active ingredients of honey and a base including components selected from the group consisting of oils, gelling agents, emulsifiers and combinations thereof. Although honey is preferably used as is, the active ingredients of honey, including vitamins, sugars, enzymes, hormones, amino acids and minerals, may be extracted from honey or other natural products or synthesized. Potential applications for the present invention include topical treatments for therapeutic, cosmetic and nutritional purposes, including hair growth, hair loss prevention and wound healing.
摘要翻译： 公开了克服与蜂蜜局部应用有关的问题的方法和准备。 制剂包括蜂蜜的活性成分和包括选自油，胶凝剂，乳化剂及其组合的组分的基质。 虽然优选按原样使用蜂蜜，但蜂蜜，包括维生素，糖，酶，激素，氨基酸和矿物质的活性成分可以从蜂蜜或其他天然产物中提取或合成。 本发明的潜在应用包括用于治疗，化妆和营养目的的局部治疗，包括头发生长，脱发脱落和伤口愈合。
-
公开(公告)号：US08138546B2
公开(公告)日：2012-03-20
申请号：US12127946
申请日：2008-05-28
申请人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
发明人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/7436 , H01L21/84 , H01L27/0262 , H01L27/1203
摘要： A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
摘要翻译： 包括硅控制整流器的集成电路的硅控制整流器和静电放电保护装置。 硅控制整流器包括形成在硅层中的硅体，其与绝缘体上硅衬底的掩埋氧化物层直接物理接触，硅层的顶表面限定水平面; 并且形成在硅体的第一区域中的硅控制整流器的阳极和形成在硅体的相对的第二区域中的硅控制整流器的阴极，其中阳极和阴极之间的电流路径仅为 在平行于水平面的单个水平方向上。
-
公开(公告)号：US07298008B2
公开(公告)日：2007-11-20
申请号：US11275638
申请日：2006-01-20
申请人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
发明人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/7436 , H01L21/84 , H01L27/0262 , H01L27/1203
摘要： Disclosed are a silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
摘要翻译： 公开了一种硅控制整流器，制造硅控制整流器的方法和使用硅控整流器作为集成电路的静电放电保护器件。 硅控制整流器包括形成在硅层中的硅体，其与绝缘体上硅衬底的掩埋氧化物层直接物理接触，硅层的顶表面限定水平面; 并且形成在硅体的第一区域中的硅控制整流器的阳极和形成在硅体的相对的第二区域中的硅控制整流器的阴极，其中阳极和阴极之间的电流路径仅为 在平行于水平面的单个水平方向上。
-
公开(公告)号：US20120119257A1
公开(公告)日：2012-05-17
申请号：US13361051
申请日：2012-01-30
申请人： Robert J. Gauthier, JR. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
发明人： Robert J. Gauthier, JR. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
IPC分类号： H01L29/73
CPC分类号： H01L29/7436 , H01L21/84 , H01L27/0262 , H01L27/1203
摘要： A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
摘要翻译： 包括硅控制整流器的集成电路的硅控制整流器和静电放电保护装置。 硅控制整流器包括形成在硅层中的硅体，其与绝缘体上硅衬底的掩埋氧化物层直接物理接触，硅层的顶表面限定水平面; 并且形成在硅体的第一区域中的硅控制整流器的阳极和形成在硅体的相对的第二区域中的硅控制整流器的阴极，其中阳极和阴极之间的电流路径仅为 在平行于水平面的单个水平方向上。
-
公开(公告)号：US07863117B2
公开(公告)日：2011-01-04
申请号：US11961356
申请日：2007-12-20
IPC分类号： H01L21/00 , H01L21/84 , H01L21/338 , H01L21/337 , H01L21/336 , H01L21/8234 , H01L21/76
CPC分类号： H01L25/0657 , H01L25/18 , H01L2224/16 , H01L2225/06513 , Y10S257/903
摘要： An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with a active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.
摘要翻译： 提供了一种用于多层硅绝缘体（SOI）器件的设备和方法。 在多层SOI器件中，器件的至少一个有源区域的晶体取向与至少另一器件的有源区域不同。 在多层SOI器件具有包括具有[100]晶体取向的硅有源区的PMOS器件的第一层的情况下，第二层可以是具有晶体取向为[110]的具有硅层的有源区的NMOS器件 ]。 第二层结合到第一层。 该方法和装置可以扩展到两层以上，从而形成在每层具有不同晶体取向的多层SOI器件。 多层SOI器件可形成表面积减小的电路。
-
公开(公告)号：US20080224172A1
公开(公告)日：2008-09-18
申请号：US12127946
申请日：2008-05-28
IPC分类号： H01L29/74
CPC分类号： H01L29/7436 , H01L21/84 , H01L27/0262 , H01L27/1203
摘要： A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
摘要翻译： 包括硅控制整流器的集成电路的硅控制整流器和静电放电保护装置。 硅控制整流器包括形成在硅层中的硅体，其与绝缘体上硅衬底的掩埋氧化物层直接物理接触，硅层的顶表面限定水平面; 并且形成在硅体的第一区域中的硅控制整流器的阳极和形成在硅体的相对的第二区域中的硅控制整流器的阴极，其中阳极和阴极之间的电流路径仅为 在平行于水平面的单个水平方向上。
-
公开(公告)号：US07399665B2
公开(公告)日：2008-07-15
申请号：US11781370
申请日：2007-07-23
申请人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
发明人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
CPC分类号： H01L29/7436 , H01L21/84 , H01L27/0262 , H01L27/1203
摘要： A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
摘要翻译： 硅控制整流器，制造硅控制整流器的方法和使用硅控制整流器作为集成电路的静电放电保护器件。 硅控制整流器包括形成在硅层中的硅体，其与绝缘体上硅衬底的掩埋氧化物层直接物理接触，硅层的顶表面限定水平面; 并且形成在硅体的第一区域中的硅控制整流器的阳极和形成在硅体的相对的第二区域中的硅控制整流器的阴极，其中阳极和阴极之间的电流路径仅为 在平行于水平面的单个水平方向上。
-
公开(公告)号：US07348658B2
公开(公告)日：2008-03-25
申请号：US10711167
申请日：2004-08-30
IPC分类号： H01L29/04
CPC分类号： H01L25/0657 , H01L25/18 , H01L2224/16 , H01L2225/06513 , Y10S257/903
摘要： An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with a active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.
摘要翻译： 提供了一种用于多层硅绝缘体（SOI）器件的设备和方法。 在多层SOI器件中，器件的至少一个有源区域的晶体取向与至少另一器件的有源区域不同。 在多层SOI器件具有包括具有[100]晶体取向的硅有源区的PMOS器件的第一层的情况下，第二层可以是具有晶体取向为[110]的具有硅层的有源区的NMOS器件 ]。 第二层结合到第一层。 该方法和装置可以扩展到两层以上，从而形成在每层具有不同晶体取向的多层SOI器件。 多层SOI器件可形成表面积减小的电路。
-
10.发明授权Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devices 有权垂直电流控制绝缘体上硅（SOI）器件，例如可控硅整流器，以及形成垂直SOI电流控制器件的方法公开(公告)号：US08815654B2
公开(公告)日：2014-08-26
申请号：US11762811
申请日：2007-06-14
CPC分类号： H01L27/0262
摘要： A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or a vertical pinch resistor and method of making the device(s). The devices are formed in a seed hole through the SOI surface layer and insulator layer to the substrate. A buried diffusion, e.g., N-type, is formed through the seed hole in the substrate. A doped epitaxial layer is formed on the buried diffusion and may include multiple doped layers, e.g., a P-type layer and an N-type layer. Polysilicon, e.g., P-type, may be formed on the doped epitaxial layer. Contacts to the buried diffusion are formed in a contact liner.
摘要翻译： 具有诸如垂直硅控制整流器（SCR），垂直双极晶体管，垂直电容器，电阻器和/或垂直钳位电阻器等器件的绝缘体硅（SOI）集成电路（IC）芯片及其制造方法 s）。 器件通过SOI表面层和绝缘体层形成在晶种孔中。 通过衬底中的种子孔形成例如N型的掩埋扩散。 掺杂的外延层形成在掩埋扩散层上，并且可以包括多个掺杂层，例如P型层和N型层。 可以在掺杂的外延层上形成多晶硅，例如P型。 与埋入扩散部的接触形成在接触衬里中。
-
-
-
-
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.016 秒)