公开(公告)号：US08492243B2

公开(公告)日：2013-07-23

申请号：US12863506

申请日：2009-01-21

申请人： Maik Haeberlen ,  Brian Murphy

发明人： Maik Haeberlen ,  Brian Murphy

IPC分类号： H01L21/30

CPC分类号： H01L21/26506 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0445 ,  H01L33/0079 ,  H01L33/46

摘要： Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.

摘要翻译： 通过在第一硅衬底上通过在硅中注入碳来提供包含单晶3C-SiC层的3C-SiC半导体层来制造半导体结构，并将适于产生光电子部件的氮化物半导体外延层施加到3C- SiC半导体层结构，其中氮化物半导体的外延层通过将氮化物层粘合到第二衬底表面上并机械地或化学地去除硅和含有SiC的层而转移到第二衬底上，第二衬底是具有反射率> 80％或基本透明。

公开(公告)号：US20100291756A1

公开(公告)日：2010-11-18

申请号：US12863506

申请日：2009-01-21

申请人： Maik Haeberlen ,  Brian Murphy

发明人： Maik Haeberlen ,  Brian Murphy

IPC分类号： H01L21/20

CPC分类号： H01L21/26506 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0445 ,  H01L33/0079 ,  H01L33/46

摘要： Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.

摘要翻译： 通过在第一硅衬底上通过在硅中注入碳来提供包含单晶3C-SiC层的3C-SiC半导体层来制造半导体结构，并将适于产生光电子部件的氮化物半导体外延层施加到3C- SiC半导体层结构，其中氮化物半导体的外延层通过将氮化物层粘合到第二衬底表面上并机械或化学地除去含有SiC的硅和层，将第二衬底转印到第二衬底上，第二衬底是具有反射率≥80的金属 ％或基本透明。

公开(公告)号：US08383495B2

公开(公告)日：2013-02-26

申请号：US13038479

申请日：2011-03-02

申请人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner ,  Bernd Stritzker

发明人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner ,  Bernd Stritzker

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02658 ,  H01L21/26506

摘要： Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

摘要翻译： 提供半导体层结构和制造结构的方法，包括由半导体材料制成的基板，在其上设置由第二半导体材料制成的层，此外还包括富含杂质原子的区域（3），该区域位于 在层（2）中或在层（2）和衬底（1）之间的界面下方的特定深度处，另外在区域（3）内富含杂质原子的层（4），该层包括通过离子注入产生的空穴， 此外，施加到层（2）的至少一个外延层（6）还包括在包括空腔的层（4）内的位错和层叠缺陷的缺陷区域（5），所述至少一个外延层（6） 所述至少一个外延层（6）的残余应变小于或等于1GPa。

公开(公告)号：US20060267024A1

公开(公告)日：2006-11-30

申请号：US11438511

申请日：2006-05-22

申请人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner

发明人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner

IPC分类号： H01L31/0312

CPC分类号： H01L21/26506

摘要： The invention relates to a semiconductor layer structure of a monocrystalline silicon carbide layer on a ≧150 mm diameter silicon wafer, the silicon carbide layer having a surface roughness of at most 0.5 nm RMS and a micropipe density of at most 1 cm−2 and being free of defects produced during crystal growth or epitaxial deposition, and to a process for producing such a semiconductor layer structure, by implanting carbon ions into a silicon wafer, heat treating the silicon wafer to produce a buried monocrystalline silicon carbide layer and flanking noncrystalline transition regions, followed by removing the upper silicon layer and noncrystalline transition region above the monocrystalline silicon carbide layer, thus uncovering the monocrystalline silicon carbide layer, and chemical mechanical planarizing the monocrystalline silicon carbide layer to a surface roughness of less than 0.5 nm RMS.

摘要翻译： 本发明涉及直径> 150mm的硅晶片上的单晶碳化硅层的半导体层结构，该碳化硅层具有至多0.5nm RMS的表面粗糙度和至多1cm 2的微管密度。 -2，并且没有在晶体生长或外延沉积期间产生的缺陷，以及通过将碳离子注入到硅晶片中来制造这种半导体层结构的方法，热处理硅晶片以产生埋入的单晶 碳化硅层和侧面非结晶过渡区，然后去除单晶碳化硅层上方的上硅层和非结晶过渡区，从而揭露单晶碳化硅层，并将单晶碳化硅层化学机械平坦化至表面粗糙度较小 大于0.5nm RMS。