公开(公告)号：US08383495B2

公开(公告)日：2013-02-26

申请号：US13038479

申请日：2011-03-02

申请人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner ,  Bernd Stritzker

发明人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner ,  Bernd Stritzker

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02658 ,  H01L21/26506

摘要： Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

摘要翻译： 提供半导体层结构和制造结构的方法，包括由半导体材料制成的基板，在其上设置由第二半导体材料制成的层，此外还包括富含杂质原子的区域（3），该区域位于 在层（2）中或在层（2）和衬底（1）之间的界面下方的特定深度处，另外在区域（3）内富含杂质原子的层（4），该层包括通过离子注入产生的空穴， 此外，施加到层（2）的至少一个外延层（6）还包括在包括空腔的层（4）内的位错和层叠缺陷的缺陷区域（5），所述至少一个外延层（6） 所述至少一个外延层（6）的残余应变小于或等于1GPa。

公开(公告)号：US20060267024A1

公开(公告)日：2006-11-30

申请号：US11438511

申请日：2006-05-22

申请人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner

发明人： Brian Murphy ,  Maik Haeberlen ,  Joerg Lindner

IPC分类号： H01L31/0312

CPC分类号： H01L21/26506

摘要： The invention relates to a semiconductor layer structure of a monocrystalline silicon carbide layer on a ≧150 mm diameter silicon wafer, the silicon carbide layer having a surface roughness of at most 0.5 nm RMS and a micropipe density of at most 1 cm−2 and being free of defects produced during crystal growth or epitaxial deposition, and to a process for producing such a semiconductor layer structure, by implanting carbon ions into a silicon wafer, heat treating the silicon wafer to produce a buried monocrystalline silicon carbide layer and flanking noncrystalline transition regions, followed by removing the upper silicon layer and noncrystalline transition region above the monocrystalline silicon carbide layer, thus uncovering the monocrystalline silicon carbide layer, and chemical mechanical planarizing the monocrystalline silicon carbide layer to a surface roughness of less than 0.5 nm RMS.

摘要翻译： 本发明涉及直径> 150mm的硅晶片上的单晶碳化硅层的半导体层结构，该碳化硅层具有至多0.5nm RMS的表面粗糙度和至多1cm 2的微管密度。 -2，并且没有在晶体生长或外延沉积期间产生的缺陷，以及通过将碳离子注入到硅晶片中来制造这种半导体层结构的方法，热处理硅晶片以产生埋入的单晶 碳化硅层和侧面非结晶过渡区，然后去除单晶碳化硅层上方的上硅层和非结晶过渡区，从而揭露单晶碳化硅层，并将单晶碳化硅层化学机械平坦化至表面粗糙度较小 大于0.5nm RMS。

公开(公告)号：US08492243B2

公开(公告)日：2013-07-23

申请号：US12863506

申请日：2009-01-21

申请人： Maik Haeberlen ,  Brian Murphy

发明人： Maik Haeberlen ,  Brian Murphy

IPC分类号： H01L21/30

CPC分类号： H01L21/26506 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0445 ,  H01L33/0079 ,  H01L33/46

摘要： Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.

摘要翻译： 通过在第一硅衬底上通过在硅中注入碳来提供包含单晶3C-SiC层的3C-SiC半导体层来制造半导体结构，并将适于产生光电子部件的氮化物半导体外延层施加到3C- SiC半导体层结构，其中氮化物半导体的外延层通过将氮化物层粘合到第二衬底表面上并机械地或化学地去除硅和含有SiC的层而转移到第二衬底上，第二衬底是具有反射率> 80％或基本透明。

公开(公告)号：US20100291756A1

公开(公告)日：2010-11-18

申请号：US12863506

申请日：2009-01-21

申请人： Maik Haeberlen ,  Brian Murphy

发明人： Maik Haeberlen ,  Brian Murphy

IPC分类号： H01L21/20

CPC分类号： H01L21/26506 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0445 ,  H01L33/0079 ,  H01L33/46

摘要： Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.

摘要翻译： 通过在第一硅衬底上通过在硅中注入碳来提供包含单晶3C-SiC层的3C-SiC半导体层来制造半导体结构，并将适于产生光电子部件的氮化物半导体外延层施加到3C- SiC半导体层结构，其中氮化物半导体的外延层通过将氮化物层粘合到第二衬底表面上并机械或化学地除去含有SiC的硅和层，将第二衬底转印到第二衬底上，第二衬底是具有反射率≥80的金属 ％或基本透明。

公开(公告)号：US08829532B2

公开(公告)日：2014-09-09

申请号：US11702011

申请日：2007-02-02

申请人： Brian Murphy ,  Maik Häberlen ,  Jörg Lindner ,  Bernd Stritzker

发明人： Brian Murphy ,  Maik Häberlen ,  Jörg Lindner ,  Bernd Stritzker

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L21/265 ,  H01L21/02

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02658 ,  H01L21/26506

摘要： Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

摘要翻译： 提供半导体层结构和制造结构的方法，包括由半导体材料制成的基板，在其上设置由第二半导体材料制成的层，此外还包括富含杂质原子的区域（3），该区域位于 在层（2）中或在层（2）和衬底（1）之间的界面下方的特定深度处，另外在区域（3）内富含杂质原子的层（4），该层包括通过离子注入产生的空穴， 此外，施加到层（2）的至少一个外延层（6）还包括在包括空腔的层（4）内的位错和层叠缺陷的缺陷区域（5），所述至少一个外延层（6） 所述至少一个外延层（6）的残余应变小于或等于1GPa。

公开(公告)号：US20070176210A1

公开(公告)日：2007-08-02

申请号：US11702011

申请日：2007-02-02

申请人： Brian Murphy ,  Maik Haberlen ,  Jorg Lindner ,  Bernd Stritzker

发明人： Brian Murphy ,  Maik Haberlen ,  Jorg Lindner ,  Bernd Stritzker

IPC分类号： H01L27/10

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02658 ,  H01L21/26506

摘要： Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

摘要翻译： 提供半导体层结构和制造结构的方法，包括由半导体材料制成的基板，在其上设置由第二半导体材料制成的层，此外还包括富含杂质原子的区域（3），该区域位于 在层（2）中或在层（2）和衬底（1）之间的界面下方的特定深度处，另外在区域（3）内富含杂质原子的层（4），该层包括通过离子注入产生的空穴， 此外，施加到层（2）的至少一个外延层（6）还包括在包括空腔的层（4）内的位错和层叠缺陷的缺陷区域（5），所述至少一个外延层（6） 所述至少一个外延层（6）的残余应变小于或等于1GPa。

公开(公告)号：US20110151650A1

公开(公告)日：2011-06-23

申请号：US13038479

申请日：2011-03-02

申请人： Brian Murphy ,  Maik Häberlen ,  Jörg Lindner ,  Bernd Stritzker

发明人： Brian Murphy ,  Maik Häberlen ,  Jörg Lindner ,  Bernd Stritzker

IPC分类号： H01L21/20

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02658 ,  H01L21/26506

摘要： Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

摘要翻译： 提供半导体层结构和制造结构的方法，包括由半导体材料制成的基板，在其上设置由第二半导体材料制成的层，此外还包括富含杂质原子的区域（3），该区域位于 在层（2）中或在层（2）和衬底（1）之间的界面下方的特定深度处，另外在区域（3）内富含杂质原子的层（4），该层包括通过离子注入产生的空穴， 此外，施加到层（2）的至少一个外延层（6）以及包括位于包括空腔的层（4）内的位错和堆垛层错的缺陷区域（5），所述至少一个外延层（6） 所述至少一个外延层（6）的残余应变小于或等于1GPa。

公开(公告)号：US09186128B2

公开(公告)日：2015-11-17

申请号：US12243367

申请日：2008-10-01

申请人： John Mugan ,  Brian Murphy ,  John McWeeney

发明人： John Mugan ,  Brian Murphy ,  John McWeeney

IPC分类号： A61B10/00 ,  A61B10/04 ,  A61B10/02 ,  A61B17/00 ,  A61B17/34 ,  A61B19/00

CPC分类号： A61B10/04 ,  A61B10/0233 ,  A61B10/0283 ,  A61B19/54 ,  A61B2010/045 ,  A61B2017/00424 ,  A61B2017/3413 ,  A61B2090/0801 ,  A61B2090/3925

摘要： A device for needle biopsy is provided. The device includes a handle member having proximal and distal portions. A proximal handle member is disposed to the proximal portion of the handle member and a distal handle member is disposed to the distal portion of the handle member. A sheath lumen is disposed within the handle member and extends from the distal portion of the handle member. A needle housing member is partially disposed to the proximal portion of the handle member and a needle is disposed within the sheath lumen. A plurality of protrusions are disposed upon the needle.

摘要翻译： 提供一种用于针刺活检的装置。 该装置包括具有近端部分和远端部分的手柄部件。 近侧手柄构件设置在手柄构件的近侧部分，并且远端手柄构件设置在手柄构件的远端部分。 护套管腔设置在手柄构件内并从手柄构件的远端部分延伸。 针壳体构件部分地设置在手柄构件的近侧部分上，并且针被设置在鞘腔内。 在针上设置有多个突起。

公开(公告)号：US08709356B2

公开(公告)日：2014-04-29

申请号：US12758395

申请日：2010-04-12

申请人： Brian Murphy ,  Scott Corey ,  Alex Flamm ,  Ben Lane ,  Conrad Laskowski ,  Chad Schneider

发明人： Brian Murphy ,  Scott Corey ,  Alex Flamm ,  Ben Lane ,  Conrad Laskowski ,  Chad Schneider

IPC分类号： B01L3/00

CPC分类号： C12Q1/6806 ,  B01L3/502715 ,  B01L3/502784 ,  B01L7/525 ,  B01L2200/0684 ,  B01L2200/10 ,  B01L2200/141 ,  B01L2200/147 ,  B01L2300/0816 ,  B01L2300/0861 ,  B01L2300/0867 ,  B01L2300/18 ,  C12Q2565/629 ,  F04B49/065 ,  F04B49/106 ,  G01N21/66 ,  G01N33/50 ,  G01N2035/00544 ,  H05B1/025 ,  Y10S435/808 ,  Y10S436/805 ,  Y10S436/809 ,  Y10T436/25

摘要： The present invention relates to systems and methods for minimizing or eliminating diffusion effects. Diffused regions of a segmented flow of multiple, miscible fluid species may be vented off to a waste channel, and non-diffused regions of fluid may be preferentially pulled off the channel that contains the segmented flow. Multiple fluid samples that are not contaminated via diffusion may be collected for analysis and measurement in a single channel. The systems and methods for minimizing or eliminating diffusion effects may be used to minimize or eliminate diffusion effects in a microfluidic system for monitoring the amplification of DNA molecules and the dissociation behavior of the DNA molecules.

摘要翻译： 本发明涉及用于最小化或消除扩散效应的系统和方法。 多个可混溶流体物质的分段流的扩散区域可以排出到废物通道，并且流体的非扩散区域可以优先地从包含分段流动的通道中拉出。 可以收集未经扩散污染的多个流体样品，以便在单个通道中进行分析和测量。 可以使用用于最小化或消除扩散效应的系统和方法来最小化或消除用于监测DNA分子的扩增和DNA分子的解离行为的微流体系统中的扩散效应。

公开(公告)号：US08589321B2

公开(公告)日：2013-11-19

申请号：US13099268

申请日：2011-05-02

申请人： Michael J. Baum ,  David Carasso ,  Robin K. Das ,  Brad Hall ,  Brian Murphy ,  Stephen Sorkin ,  Andre Stechert ,  Erik M. Swan ,  Rory Greene ,  Nicholas Christian Mealy ,  Christina Noren

发明人： Michael J. Baum ,  David Carasso ,  Robin K. Das ,  Brad Hall ,  Brian Murphy ,  Stephen Sorkin ,  Andre Stechert ,  Erik M. Swan ,  Rory Greene ,  Nicholas Christian Mealy ,  Christina Noren

IPC分类号： G06F15/18

CPC分类号： G06F17/30604 ,  G06F11/3476 ,  G06F17/2785 ,  G06F17/30368 ,  G06F17/30477 ,  G06F17/30507 ,  G06F17/30525 ,  G06F17/30551 ,  G06F17/30598 ,  G06F17/30619 ,  G06F17/30657 ,  G06F17/30705 ,  G06K9/6217 ,  H04L63/1425 ,  H04L63/20

摘要： Methods and apparatus consistent with the invention provide the ability to organize and build understandings of machine data generated by a variety of information-processing environments. Machine data is a product of information-processing systems (e.g., activity logs, configuration files, messages, database records) and represents the evidence of particular events that have taken place and been recorded in raw data format. In one embodiment, machine data is turned into a machine data web by organizing machine data into events and then linking events together.