公开(公告)号：US06997217B2

公开(公告)日：2006-02-14

申请号：US10289414

申请日：2002-11-07

Applicant: Shih-Hao Shih ,  Wei-Chen Chen ,  Chi-Chen Luo ,  Hsin-Cheng Liu ,  Andy Lin

Inventor： Shih-Hao Shih ,  Wei-Chen Chen ,  Chi-Chen Luo ,  Hsin-Cheng Liu ,  Andy Lin

IPC: B65B1/04

CPC classification number: H01L21/67017 ,  Y10S414/135

Abstract: A gas conduit for a load lock chamber. The gas conduit connects to a gas source to introduce gas from the gas source into the load lock chamber of semiconductor equipment. The structure includes a filter mounted on the top surface of the load lock chamber, a pressure limitative device to maintain a preset pressure of gas source, and a gas inlet device including an inlet end connected to the pressure limitative device and an outlet end connected to the filter, wherein the gas inlet device introduces gas from the gas source into the load lock chamber with its maximum flow rate when breaching the vacuum therein.

公开(公告)号：USD393564S

公开(公告)日：1998-04-21

申请号：US069844

申请日：1997-04-18

Applicant: Hsin-Cheng Liu

Designer： Hsin-Cheng Liu

公开(公告)号：US5689844A

公开(公告)日：1997-11-25

申请号：US790337

申请日：1997-01-28

Applicant: Hsin-Cheng Liu

Inventor： Hsin-Cheng Liu

IPC: A47G9/10 ,  A47G9/02

CPC classification number: A47G9/10

Abstract: This invention relates to an improved pillow having a multiple layer configuration. The pillow comprises an inner core, an intermediate layer and a surface layer. The inner core is integrally formed by three different materials each of which them has different elastic capability. The inner core has a corrugated outer surface. The inner core is further enclosed by an intermediate layer and is integrally formed by three different materials each of which them has different elastic capability. The intermediate layer has a smooth inner surface and a corrugated outer surface. The surface layer is made from son foam and has a smooth inner surface and a corrugated outer surface. By this arrangement, a supporting gradient is established in the resulting pillow. The pillow can be readily oriented to obtain suitable support for the head an neck portions to meet different requirements from the user. A plurality of air gaps are formed by the interference fit between the corrugated outer surface and smooth inner surface of two adjacent layers. When the pillow is compressed and released, the air trapped within the air gaps are squeezed and ventilated to provide an amiable contacting feeling to the head and neck portion. The resulting pillow can be cleaned and dehydrated by a washing machine without deforming. The resulting pillow can be readily packed by a vacuum process for storage and transportation.

Abstract translation: 本发明涉及一种具有多层结构的改良枕头。 枕头包括内芯，中间层和表面层。 内芯由三种不同的材料整体形成，每种材料都具有不同的弹性。 内芯具有波纹状的外表面。 内芯进一步由中间层包围，并且通过三种不同的材料一体地形成，它们具有不同的弹性。 中间层具有光滑的内表面和波纹状的外表面。 表面层由儿子泡沫制成，具有光滑的内表面和波纹状的外表面。 通过这种安排，在所得到的枕头中建立了支撑梯度。 枕头可以容易地定向以获得用于头部颈部的合适的支撑以满足来自使用者的不同要求。 通过两个相邻层的波纹状外表面和光滑内表面之间的过盈配合形成多个气隙。 当枕头被压缩和释放时，被捕获在空气间隙内的空气被挤压和通风，以向头部和颈部提供亲和的接触感。 所得到的枕头可以通过洗衣机进行清洁和脱水而不变形。 所得到的枕头可以通过真空过程容易地包装以进行储存和运输。

公开(公告)号：US06897121B2

公开(公告)日：2005-05-24

申请号：US10442266

申请日：2003-05-21

Applicant: H. Wally Lee ,  Ching-Ping Wu ,  Han-Maou Chang ,  Ma Chia-Chih ,  Nan-Tzu Lian ,  Hsin-Cheng Liu

Inventor： H. Wally Lee ,  Ching-Ping Wu ,  Han-Maou Chang ,  Ma Chia-Chih ,  Nan-Tzu Lian ,  Hsin-Cheng Liu

IPC: H01L21/3105 ,  H01L21/316 ,  H01L21/762 ,  H01L21/76

CPC classification number: H01L21/31053 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/31056 ,  H01L21/31612 ,  H01L21/76229

Abstract: A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.

Abstract translation: 一种去除HDP氧化物沉积的方法包括以下步骤：（1）通过侧面模型蚀刻HDP氧化物沉积，其中衬底中心的蚀刻速率比衬底的边缘快; （2）通过外侧模型蚀刻HDP氧化物沉积，其中衬底边缘中的蚀刻速度比衬底的中心快; 和（3）使用化学机械抛光（CMP）去除剩余的氧化硅层。 根据本发明的方法，HDP氧化物沉积可以被平坦化得更均匀。

公开(公告)号：US06799152B1

公开(公告)日：2004-09-28

申请号：US10206268

申请日：2002-07-26

Applicant: Chih-Ping Chen ,  Shao-Chung Hsu ,  De-Chuan Liu ,  Jung-Kuei Lu ,  Cheng-Yi Lin ,  Ta-Hung Yang ,  Hsin-Cheng Liu ,  Mao-I Ting ,  Yih-Cheng Shih

Inventor： Chih-Ping Chen ,  Shao-Chung Hsu ,  De-Chuan Liu ,  Jung-Kuei Lu ,  Cheng-Yi Lin ,  Ta-Hung Yang ,  Hsin-Cheng Liu ,  Mao-I Ting ,  Yih-Cheng Shih

IPC: G06F1750

CPC classification number: G06F17/50 ,  G06F2217/10 ,  G07C3/146

Abstract: The current invention provides a method for analyzing process variations that occur during integrated circuit fabrication. Critical dimension data is collected for each layer of the integrated circuit fabrication process for a period of time and a shift indicator that indicates variation in the critical dimension data for each layer of the integrated circuit fabrication process is calculated. A machine drift significance indicator is also calculated for each machine used in each layer of the integrated circuit fabrication process, and a maximum shift of mean value for each layer of the integrated circuit fabrication process is defined. The shift indicator, the maximum shift of mean value and the machine drift significance indicator are used to determine at least one likely cause of variation in critical dimension for each layer of the integrated circuit fabrication process.

Abstract translation: 本发明提供了一种用于分析在集成电路制造期间发生的工艺变化的方法。 针对集成电路制造过程的每个层收集关键尺寸数据一段时间，并且计算指示集成电路制造过程的每层的临界尺寸数据的变化的移位指示器。 还针对在集成电路制造工艺的每个层中使用的每个机器计算机器漂移显着性指标，并且定义了集成电路制造工艺的每一层的平均值的最大偏移。 移位指示器，平均值的最大偏移和机器漂移显着性指示器用于确定集成电路制造过程的每个层的关键尺寸的至少一个可能的变化原因。