公开(公告)号：US09502659B2

公开(公告)日：2016-11-22

申请号：US11893673

申请日：2007-08-16

申请人： Jean-Philippe Bourgoin ,  Marcelo Goffman ,  Vincent Derycke ,  Nicolas Chimot

发明人： Jean-Philippe Bourgoin ,  Marcelo Goffman ,  Vincent Derycke ,  Nicolas Chimot

IPC分类号： H01L51/00 ,  B82Y10/00 ,  H01L51/05

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/0558

摘要： A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.

摘要翻译： 提供了一种基于纳米管的柔性场效应晶体管及其制造方法。 根据本发明的场效应晶体管包括至少两个接触电极，分别是漏极和源极，连接到接触电极的导电区，所述区包括基本对准的多个单壁碳纳米管，栅电极 用于控制在所述区域中循环的电流和其上沉积有接触和栅电极的柔性基板。 导电区中的纳米管密度严格大于每微米10纳米管。

公开(公告)号：US20080296563A1

公开(公告)日：2008-12-04

申请号：US11893673

申请日：2007-08-16

申请人： Jean-Philippe Bourgoin ,  Marcelo Goffman ,  Vincent Derycke ,  Nicolas Chimot

发明人： Jean-Philippe Bourgoin ,  Marcelo Goffman ,  Vincent Derycke ,  Nicolas Chimot

IPC分类号： H01L51/30 ,  H01L51/40 ,  H01L51/48

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/0558

摘要： A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.

摘要翻译： 提供了一种基于纳米管的柔性场效应晶体管及其制造方法。 根据本发明的场效应晶体管包括至少两个接触电极，分别是漏极和源极，连接到接触电极的导电区，所述区包括基本对准的多个单壁碳纳米管，栅电极 用于控制在所述区域中循环的电流和其上沉积有接触和栅电极的柔性基板。 导电区中的纳米管密度严格大于每微米10纳米管。

公开(公告)号：US20070056063A1

公开(公告)日：2007-03-08

申请号：US10552855

申请日：2003-04-22

申请人： Stephane Auvray ,  Jean-Philippe Bourgoin ,  Vincent Derycke ,  Marcelo Goffman

发明人： Stephane Auvray ,  Jean-Philippe Bourgoin ,  Vincent Derycke ,  Marcelo Goffman

IPC分类号： D01F9/12

CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B2202/22 ,  G01N27/12 ,  G11C2213/17 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S977/746 ,  Y10S977/847 ,  Y10S977/938 ,  Y10S977/957

摘要： The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2 and R3 being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.

摘要翻译： 本发明涉及一种用于修饰碳纳米管或纳米线的至少电子性质的方法，包括将所述纳米管或纳米线暴露于具有式（I）的酸，其中R 1，R 2 R 3和R 3在包含（H，F，Cl，Br，I）的基团中选自具有至少一个R 1，R 2， 2和R 3不同于H。纳米管或纳米线的至少一部分可以是场效应晶体管的沟道区。

公开(公告)号：US07323730B2

公开(公告)日：2008-01-29

申请号：US11185153

申请日：2005-07-20

申请人： Julien Borghetti ,  Jean-Philippe Bourgoin ,  Pascale Mordant ,  Vincent Derycke ,  Arianna Filoramo ,  Marcelo Goffman

发明人： Julien Borghetti ,  Jean-Philippe Bourgoin ,  Pascale Mordant ,  Vincent Derycke ,  Arianna Filoramo ,  Marcelo Goffman

IPC分类号： H01L31/062

CPC分类号： H01L51/0049 ,  B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  G11C13/04 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/428 ,  Y02E10/549 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.

摘要翻译： 本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖 通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

公开(公告)号：US20070085155A1

公开(公告)日：2007-04-19

申请号：US11185153

申请日：2005-07-20

申请人： Julien Borghetti ,  Jean-Philippe Bourgoin ,  Pascale Mordant ,  Vincent Derycke ,  Arianna Filoramo ,  Marcelo Goffman

发明人： Julien Borghetti ,  Jean-Philippe Bourgoin ,  Pascale Mordant ,  Vincent Derycke ,  Arianna Filoramo ,  Marcelo Goffman

IPC分类号： H01L29/82

CPC分类号： H01L51/0049 ,  B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  G11C13/04 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/428 ,  Y02E10/549 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.

摘要翻译： 本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖 通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

公开(公告)号：US07439562B2

公开(公告)日：2008-10-21

申请号：US10552855

申请日：2003-04-22

申请人： Stéphane Auvray ,  Jean-Philippe Bourgoin ,  Vincent Derycke ,  Marcelo Goffman

发明人： Stéphane Auvray ,  Jean-Philippe Bourgoin ,  Vincent Derycke ,  Marcelo Goffman

IPC分类号： C01B31/02 ,  G01N27/12 ,  H01L51/40

CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B2202/22 ,  G01N27/12 ,  G11C2213/17 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S977/746 ,  Y10S977/847 ,  Y10S977/938 ,  Y10S977/957

摘要： The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2 and R3 being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.

摘要翻译： 本发明涉及一种用于修饰碳纳米管或纳米线的至少电子性质的方法，包括将所述纳米管或纳米线暴露于具有式（I）的酸，其中R 1，R 2 R 3和R 3在包含（H，F，Cl，Br，I）的基团中选自具有至少一个R 1，R 2， 2和R 3不同于H。纳米管或纳米线的至少一部分可以是场效应晶体管的沟道区。