公开(公告)号：US20120133246A1

公开(公告)日：2012-05-31

申请号：US13368361

申请日：2012-02-08

申请人： Mari YAOI ,  Tetsuya KIMURA

发明人： Mari YAOI ,  Tetsuya KIMURA

IPC分类号： H01L41/047 ,  H01L41/18 ,  H01L41/16

CPC分类号： H01L41/047 ,  H03H9/0222 ,  H03H9/131 ,  H03H9/14541

摘要： Regarding a boundary acoustic wave device in which at least a part of an IDT electrode is embedded in a groove disposed in a piezoelectric substrate, the acoustic velocity is increased. A boundary acoustic wave device is provided with a piezoelectric substrate, a first dielectric layer, and an IDT electrode. The surface of the piezoelectric substrate is provided with a groove. The IDT electrode is disposed at the boundary between the piezoelectric substrate and the first dielectric layer in such a way that at least a part thereof is located in the groove. In the inside of the groove, the groove angle γ, which is the size of an angle formed by an upper end portion of the inside surface of the groove with the surface of the piezoelectric substrate, is less than 90 degrees.

摘要翻译： 关于其中至少一部分IDT电极嵌入设置在压电基板中的槽中的声界面波装置，声速增加。 声界面波装置具有压电基板，第一电介质层和IDT电极。 压电基板的表面设置有凹槽。 IDT电极设置在压电基板和第一介电层之间的边界处，使得其至少一部分位于凹槽中。 在槽的内部，由沟槽内表面的上端部与压电基板的表面形成的角度的大小的槽角γ小于90度。

公开(公告)号：US07923896B2

公开(公告)日：2011-04-12

申请号：US12813589

申请日：2010-06-11

申请人： Tetsuya Kimura ,  Michio Kadota ,  Mari Yaoi

发明人： Tetsuya Kimura ,  Michio Kadota ,  Mari Yaoi

IPC分类号： H03H9/25 ,  H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in an upper surface thereof, an IDT electrode primarily composed of Pt provided in the grooves, a SiO2 layer arranged so as to cover the upper surface of the LiNbO3 substrate and the IDT electrode, a surface of the SiO2 layer is planarized, a response of a Rayleigh wave is utilized, and Euler angles of the LiNbO3 substrate are in a range of (0°±5°, 208° to 228°, 0°±5°).

摘要翻译： 包括SiO膜的表面声波器件具有改善的频率温度特性，防止插入损耗增加，获得足够高的电极的反射系数，并且实现更优选的谐振特性和滤波器特性。 声表面波装置包括：LiNbO 3基板，其上表面具有多个槽，主要由设置在槽中的Pt构成的IDT电极，覆盖LiNbO 3基板的上表面的SiO 2层， IDT电极，SiO 2层的表面平坦化，利用瑞利波的响应，LiNbO 3基板的欧拉角在（0°±5°，208°〜228°，0°±5°）的范围内 °）。

公开(公告)号：US07626313B2

公开(公告)日：2009-12-01

申请号：US12341259

申请日：2008-12-22

申请人： Mari Yaoi ,  Tetsuya Kimura ,  Michio Kadota

发明人： Mari Yaoi ,  Tetsuya Kimura ,  Michio Kadota

IPC分类号： H01L41/08 ,  H03H9/145

CPC分类号： H03H3/08 ,  H03H9/02559

摘要： A surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in the upper surface thereof, an IDT electrode formed by filling the grooves with a metal, and a SiO2 layer arranged to cover an upper surface of the LiNbO3 substrate and the IDT electrode and having a substantially flat surface. The surface acoustic wave device uses a response of a Rayleigh wave. The LiNbO3 substrate has Euler angles in the range of (0°±5°, 180° to 247°, 0°±5°).

摘要翻译： 表面声波装置包括：LiNbO 3基板，其上表面具有多个槽，通过用金属填充槽形成的IDT电极和覆盖LiNbO 3基板的上表面的IDT和IDT 电极并具有基本平坦的表面。 表面声波装置使用瑞利波的响应。 LiNbO3基板在（0°±5°，180°至247°，0°±5°）的范围内具有欧拉角。

公开(公告)号：US20090096320A1

公开(公告)日：2009-04-16

申请号：US12341259

申请日：2008-12-22

申请人： Mari YAOI ,  Tetsuya KIMURA ,  Michio KADOTA

发明人： Mari YAOI ,  Tetsuya KIMURA ,  Michio KADOTA

IPC分类号： H01L41/047

CPC分类号： H03H3/08 ,  H03H9/02559

摘要： A surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in the upper surface thereof, an IDT electrode formed by filling the grooves with a metal, and a SiO2 layer arranged to cover an upper surface of the LiNbO3 substrate and the IDT electrode and having a substantially flat surface. The surface acoustic wave device uses a response of a Rayleigh wave. The LiNbO3 substrate has Euler angles in the range of (0°±5°, 180° to 247°, 0°±5°).

摘要翻译： 表面声波装置包括：LiNbO 3基板，其上表面具有多个槽，通过用金属填充槽形成的IDT电极和覆盖LiNbO 3基板的上表面的IDT和IDT 电极并具有基本平坦的表面。 表面声波装置使用瑞利波的响应。 LiNbO3基板在（0°±5°，180°至247°，0°±5°）的范围内具有欧拉角。

公开(公告)号：US08344589B2

公开(公告)日：2013-01-01

申请号：US13368361

申请日：2012-02-08

申请人： Mari Yaoi ,  Tetsuya Kimura

发明人： Mari Yaoi ,  Tetsuya Kimura

IPC分类号： H01L41/08

CPC分类号： H01L41/047 ,  H03H9/0222 ,  H03H9/131 ,  H03H9/14541

摘要： Regarding a boundary acoustic wave device in which at least a part of an IDT electrode is embedded in a groove disposed in a piezoelectric substrate, the acoustic velocity is increased. A boundary acoustic wave device is provided with a piezoelectric substrate, a first dielectric layer, and an IDT electrode. The surface of the piezoelectric substrate is provided with a groove. The IDT electrode is disposed at the boundary between the piezoelectric substrate and the first dielectric layer in such a way that at least a part thereof is located in the groove. In the inside of the groove, the groove angle γ, which is the size of an angle formed by an upper end portion of the inside surface of the groove with the surface of the piezoelectric substrate, is less than 90 degrees.

摘要翻译： 关于其中至少一部分IDT电极嵌入设置在压电基板中的槽中的声界面波装置，声速增加。 声界面波装置具有压电基板，第一电介质层和IDT电极。 压电基板的表面设置有凹槽。 IDT电极设置在压电基板和第一介电层之间的边界处，使得其至少一部分位于凹槽中。 在槽的内部，由沟槽内表面的上端部与压电基板的表面形成的角度的大小的槽角γ小于90度。

公开(公告)号：US20100237741A1

公开(公告)日：2010-09-23

申请号：US12813589

申请日：2010-06-11

申请人： Tetsuya KIMURA ,  Michio KADOTA ,  Mari YAOI

发明人： Tetsuya KIMURA ,  Michio KADOTA ,  Mari YAOI

IPC分类号： H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in an upper surface thereof, an IDT electrode primarily composed of Pt provided in the grooves, a SiO2 layer arranged so as to cover the upper surface of the LiNbO3 substrate and the IDT electrode, a surface of the SiO2 layer is planarized, a response of a Rayleigh wave is utilized, and Euler angles of the LiNbO3 substrate are in a range of (0°±5°, 208° to 228°, 0°±5°).

摘要翻译： 包括SiO膜的表面声波器件具有改善的频率温度特性，防止插入损耗增加，获得足够高的电极的反射系数，并且实现更优选的谐振特性和滤波器特性。 声表面波装置包括：LiNbO 3基板，其上表面具有多个槽，主要由设置在槽中的Pt构成的IDT电极，覆盖LiNbO 3基板的上表面的SiO 2层， IDT电极，SiO 2层的表面平坦化，利用瑞利波的响应，LiNbO 3基板的欧拉角在（0°±5°，208°〜228°，0°±5°）的范围内 °）。