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    Method of fabricating nanosized filamentary carbon devices over a relatively large-area
    2.
    发明授权
    Method of fabricating nanosized filamentary carbon devices over a relatively large-area 有权
    在较大面积上制造纳米尺寸丝状碳装置的方法

    公开(公告)号：US08048785B2

    公开(公告)日：2011-11-01

    申请号：US12627426

    申请日：2009-11-30

    申请人： Danilo Mascolo ,  Maria Fortuna Bevilacqua

    发明人： Danilo Mascolo ,  Maria Fortuna Bevilacqua

    IPC分类号： H01L21/20

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/05 ,  H01L51/057 ,  Y10S977/742 ,  Y10S977/89 ,  Y10S977/901

    摘要： Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need of applying any external voltage source bias. The growth process may be inherently self-stopping, upon reaching a significant population of grown CNTs on the second surface. A gap between the two surfaces may be defined for CNT devices being simultaneously fabricated by common integrated circuit integration techniques. The process includes finding that for separation gaps of up to a hundred or more nanometers, a difference between the respective work functions of the materials delimiting the gap space, for example, different metallic materials or a doped semiconductor of different dopant concentration or type, may produce an electric field intensity orienting the growth of nucleated CNTs from the surface of one of the materials toward the surface of the other material.

    摘要翻译： 在催化表面上成核的纳米化丝状碳结构（CNT）可以沿着与第一表面间隔开的第二表面的上下方向生长，而不需要施加任何外部电压源偏压。 在第二个表面上达到大量生长的CNT后，生长过程可能固有地自我停止。 可以为通过公共集成电路集成技术同时制造的CNT器件定义两个表面之间的间隙。 该方法包括发现对于高达一百或更多纳米的分离间隙，限定间隙空间的材料的各个功函数（例如，不同的金属材料或不同掺杂剂浓度或类型的掺杂半导体）之间的差异可以 产生将有形CNT的生长从其中一种材料的表面朝着另一种材料的表面定向的电场强度。

    OPTICALLY CONTROLLED ELECTRICAL-SWITCH DEVICE BASED UPON CARBON NANOTUBES AND ELECTRICAL-SWITCH SYSTEM USING THE SWITCH DEVICE
    3.
    发明申请
    OPTICALLY CONTROLLED ELECTRICAL-SWITCH DEVICE BASED UPON CARBON NANOTUBES AND ELECTRICAL-SWITCH SYSTEM USING THE SWITCH DEVICE 有权
    基于碳纳米管的光控电气设备和使用开关装置的电开关系统

    公开(公告)号：US20090321619A1

    公开(公告)日：2009-12-31

    申请号：US12551468

    申请日：2009-08-31

    申请人： MICHELE PORTICO AMBROSIO ,  MARIA GRAZIA MAGLIONE ,  MARIA FORTUNA BEVILACQUA ,  LUIGI OCCHIPINTI ,  SALVATORE COFFA ,  SALVATORE CASTORINA

    发明人： MICHELE PORTICO AMBROSIO ,  MARIA GRAZIA MAGLIONE ,  MARIA FORTUNA BEVILACQUA ,  LUIGI OCCHIPINTI ,  SALVATORE COFFA ,  SALVATORE CASTORINA

    IPC分类号： G02B6/26 ,  H01L31/0256 ,  H01L21/00

    CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C13/04 ,  G11C13/047

    摘要： Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being designed to be impinged upon by electromagnetic radiation and having an electrical conductivity that can be varied by varying the polarization of the electromagnetic radiation incident thereon. In particular, the carbon nanotube may for example, in given conditions of electrical biasing, present a high electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially parallel to the axis of the carbon nanotube itself, and a reduced electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially orthogonal to the axis of the carbon nanotube itself.

    摘要翻译： 这里描述的是一种光学控制的电气开关装置，其包括第一导电端子和第二导通端子以及连接在第一和第二电流传导端子之间的碳纳米管，碳纳米管设计成被撞击 通过电磁辐射并且具有可以通过改变入射在其上的电磁辐射的极化而改变的电导率。 特别地，碳纳米管可以例如在给定的电偏置条件下，当其受到具有给定波长的电磁辐射和基本上平行于碳纳米管本身的极化的极化的冲击时，呈现高导电性，并且 当具有给定波长的电磁辐射和与碳纳米管本身的轴线基本正交的极化时，其导电性降低。

    Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device
    5.
    发明授权
    Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device 有权
    基于碳纳米管的光控电气开关装置和使用开关装置的电气开关系统

    公开(公告)号：US08143086B2

    公开(公告)日：2012-03-27

    申请号：US13082805

    申请日：2011-04-08

    申请人： Michele Portico Ambrosio ,  Maria Grazia Maglione ,  Maria Fortuna Bevilacqua ,  Luigi Occhipinti ,  Salvatore Coffa ,  Salvatore Castorina

    发明人： Michele Portico Ambrosio ,  Maria Grazia Maglione ,  Maria Fortuna Bevilacqua ,  Luigi Occhipinti ,  Salvatore Coffa ,  Salvatore Castorina

    IPC分类号： H01L31/18

    CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C13/04 ,  G11C13/047

    摘要： Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being designed to be impinged upon by electromagnetic radiation and having an electrical conductivity that can be varied by varying the polarization of the electromagnetic radiation incident thereon. In particular, the carbon nanotube may for example, in given conditions of electrical biasing, present a high electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially parallel to the axis of the carbon nanotube itself, and a reduced electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially orthogonal to the axis of the carbon nanotube itself.

    摘要翻译： 这里描述的是一种光学控制的电气开关装置，其包括第一导电端子和第二导通端子以及连接在第一和第二电流传导端子之间的碳纳米管，碳纳米管设计成被撞击 通过电磁辐射并且具有可以通过改变入射在其上的电磁辐射的极化而改变的电导率。 特别地，碳纳米管可以例如在给定的电偏置条件下，当其受到具有给定波长的电磁辐射和基本上平行于碳纳米管本身的极化的极化的冲击时，呈现高导电性，并且 当具有给定波长的电磁辐射和与碳纳米管本身的轴线基本正交的极化时，其导电性降低。

    METHOD OF FABRICATING NANOSIZED FILAMENTARY CARBON DEVICES OVER A RELATIVELY LARGE-AREA
    6.
    发明申请
    METHOD OF FABRICATING NANOSIZED FILAMENTARY CARBON DEVICES OVER A RELATIVELY LARGE-AREA 有权
    在相对较大的区域上制造纳米级薄膜器件的方法

    公开(公告)号：US20120025166A1

    公开(公告)日：2012-02-02

    申请号：US13269923

    申请日：2011-10-10

    申请人： Danilo Mascolo ,  Maria Fortuna Bevilacqua

    发明人： Danilo Mascolo ,  Maria Fortuna Bevilacqua

    IPC分类号： H01L29/06 ,  B82Y99/00

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/05 ,  H01L51/057 ,  Y10S977/742 ,  Y10S977/89 ,  Y10S977/901

    摘要： Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need of applying any external voltage source bias. The growth process may be inherently self-stopping, upon reaching a significant population of grown CNTs on the second surface. A gap between the two surfaces may be defined for CNT devices being simultaneously fabricated by common integrated circuit integration techniques. The process includes finding that for separation gaps of up to a hundred or more nanometers, a difference between the respective work functions of the materials delimiting the gap space, for example, different metallic materials or a doped semiconductor of different dopant concentration or type, may produce an electric field intensity orienting the growth of nucleated CNTs from the surface of one of the materials toward the surface of the other material.

    摘要翻译： 在催化表面上成核的纳米化丝状碳结构（CNT）可以沿着与第一表面间隔开的第二表面的上下方向生长，而不需要施加任何外部电压源偏压。 在第二个表面上达到大量生长的CNT后，生长过程可能固有地自我停止。 可以为通过公共集成电路集成技术同时制造的CNT器件定义两个表面之间的间隙。 该方法包括发现对于高达一百或更多纳米的分离间隙，限定间隙空间的材料的各个功函数（例如，不同的金属材料或不同掺杂剂浓度或类型的掺杂半导体）之间的差异可以 产生将有形CNT的生长从其中一种材料的表面朝着另一种材料的表面定向的电场强度。

    Method of forming light emitting devices comprising semiconducting single walled carbon nanotubes
    7.
    发明授权
    Method of forming light emitting devices comprising semiconducting single walled carbon nanotubes 有权
    形成包含半导体单壁碳纳米管的发光器件的方法

    公开(公告)号：US08008102B2

    公开(公告)日：2011-08-30

    申请号：US11958858

    申请日：2007-12-18

    申请人： Vincenzo Vinciguerra ,  Francesco Buonocore ,  Maria Fortuna Bevilacqua ,  Salvatore Coffa

    发明人： Vincenzo Vinciguerra ,  Francesco Buonocore ,  Maria Fortuna Bevilacqua ,  Salvatore Coffa

    IPC分类号： H01L51/50

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/18 ,  H01L33/24 ,  Y10S977/75

    摘要： The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.

    摘要翻译： 本发明涉及利用半导体单壁碳纳米管（SWNT）的新型发光体。 给出了实验证明，在标准硅技术中，如何设计在红外线IR中发射的发光二极管（LED），其中发光是由半导体单壁碳纳米管（SWNTs）上的电子和空穴的辐射复合引起的， LED）。 我们还将展示如何实现这些SWNTs-LED，以便基于SWNT的发射性质建立激光源。 还给出了这种装置的制造过程的描述。

    METHOD OF FABRICATING NANOSIZED FILAMENTARY CARBON DEVICES OVER A RELATIVELY LARGE-AREA
    10.
    发明申请
    METHOD OF FABRICATING NANOSIZED FILAMENTARY CARBON DEVICES OVER A RELATIVELY LARGE-AREA 有权
    在相对较大的区域上制造纳米级薄膜器件的方法

    公开(公告)号：US20100264399A1

    公开(公告)日：2010-10-21

    申请号：US12627426

    申请日：2009-11-30

    申请人： Danilo MASCOLO ,  Maria Fortuna Bevilacqua

    发明人： Danilo MASCOLO ,  Maria Fortuna Bevilacqua

    IPC分类号： H01L29/66 ,  H01L21/20

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/05 ,  H01L51/057 ,  Y10S977/742 ,  Y10S977/89 ,  Y10S977/901

    摘要： Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need of applying any external voltage source bias. The growth process may be inherently self-stopping, upon reaching a significant population of grown CNTs on the second surface. A gap between the two surfaces may be defined for CNT devices being simultaneously fabricated by common integrated circuit integration techniques. The process includes finding that for separation gaps of up to a hundred or more nanometers, a difference between the respective work functions of the materials delimiting the gap space, for example, different metallic materials or a doped semiconductor of different dopant concentration or type, may produce an electric field intensity orienting the growth of nucleated CNTs from the surface of one of the materials toward the surface of the other material.

    摘要翻译： 在催化表面上成核的纳米化丝状碳结构（CNT）可以沿着与第一表面间隔开的第二表面的上下方向生长，而不需要施加任何外部电压源偏压。 在第二个表面上达到大量生长的CNT后，生长过程可能固有地自我停止。 可以为通过公共集成电路集成技术同时制造的CNT器件定义两个表面之间的间隙。 该方法包括发现对于高达一百或更多纳米的分离间隙，限定间隙空间的材料的各个功函数（例如，不同的金属材料或不同掺杂剂浓度或类型的掺杂半导体）之间的差异可以 产生将有形CNT的生长从其中一种材料的表面朝着另一种材料的表面定向的电场强度。