Tungsten-filled deep trenches
    4.
    发明授权
    Tungsten-filled deep trenches 有权
    充满钨的深沟

    公开(公告)号:US06218298B1

    公开(公告)日:2001-04-17

    申请号:US09315089

    申请日:1999-05-19

    申请人: Mark D. Hoinkis

    发明人: Mark D. Hoinkis

    IPC分类号: H01L2144

    摘要: A satisfactory conductive fill of a vertical trench of aspect ratio of at least 20 to 1 in a silicon substrate is obtained by heating the substrate to a temperature of about 375° C. or less in a chamber for chemical vapor deposition along with a mixture of WF6, H2, and SiH4 for filling the trench with tungsten. Also, W(CO)6 may be substituted for the WF6.

    摘要翻译: 通过在用于化学气相沉积的室中将衬底加热至约375℃或更低的温度,同时将硅衬底的混合物混合,得到硅衬底中纵横比为至少20:1的垂直沟槽的令人满意的导电填料 WF6,H2和SiH4,用钨填充沟槽。 此外,W(CO)6可以代替WF6。