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公开(公告)号:US6146517A
公开(公告)日:2000-11-14
申请号:US315091
申请日:1999-05-19
申请人: Mark D. Hoinkis
发明人: Mark D. Hoinkis
IPC分类号: H01L21/3205 , C23C28/00 , H01L21/288 , H01L21/768 , H01L23/52 , H01L23/532 , H05K3/10 , C23C28/02
CPC分类号: H01L21/76843 , C23C28/322 , C23C28/34 , H01L21/2885 , H01L21/76846 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L23/53238 , H01L2221/1078 , H01L2221/1089 , H01L2924/0002
摘要: An improved fill of high aspect ratio trenches by copper is obtained by first sputtering a thin nucleating film of copper deposited by physical vapor deposition, then depositing a thin seed layer of copper by chemical vapor deposition, and then completing the fill by electroplating. Stress migration of the fill is improved if the copper deposition is preceded by the deposition by CVD of a layer of titanium nitride either alone or preceded and/or followed by the deposition of tantalum by an ionized PVD source.
摘要翻译: 通过首先溅射通过物理气相沉积沉积的铜的薄成膜膜,然后通过化学气相沉积沉积薄的种子层铜,然后通过电镀完成填充,获得铜的高纵横比沟槽的改进填充。 如果铜沉积之前是通过CVD沉积氮化钛层,单独或之前和/或之后通过电离PVD源沉积钽,填料的应力迁移得到改善。
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公开(公告)号:US06960835B2
公开(公告)日:2005-11-01
申请号:US10698057
申请日:2003-10-30
IPC分类号: H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/532 , H01L29/00
CPC分类号: H01L23/5329 , H01L21/76801 , H01L21/76829 , H01L21/76835 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要: In a semiconductor integrated circuit device, thermo-mechanical stresses on the vias can be reduced by introducing a stress relief layer between the vias and a hard dielectric layer that overlies the vias.
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公开(公告)号:US06864171B1
公开(公告)日:2005-03-08
申请号:US10682462
申请日:2003-10-09
申请人: Mark D. Hoinkis , Matthias P. Hierlemann , Mohammed Fazil Fayaz , Andy Cowley , Erdum Kaltalioglu
发明人: Mark D. Hoinkis , Matthias P. Hierlemann , Mohammed Fazil Fayaz , Andy Cowley , Erdum Kaltalioglu
IPC分类号: G06F17/50 , H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号: H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要: Thermo-mechanical stress on vias is reduced, thereby reducing related failures. This can be done by maintaining a via-to-metal area ratio at least as large as a predetermined value below which the additional stress on the vias does not significantly increase.
摘要翻译: 通孔上的热机械应力降低,从而减少相关故障。 这可以通过保持通孔至金属面积比至少等于预定值以下,通孔上的附加应力不会显着增加的程度来实现。
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公开(公告)号:US06218298B1
公开(公告)日:2001-04-17
申请号:US09315089
申请日:1999-05-19
申请人: Mark D. Hoinkis
发明人: Mark D. Hoinkis
IPC分类号: H01L2144
CPC分类号: C23C16/14 , C23C16/045 , H01L21/76877 , H01L21/76898 , H01L27/10861
摘要: A satisfactory conductive fill of a vertical trench of aspect ratio of at least 20 to 1 in a silicon substrate is obtained by heating the substrate to a temperature of about 375° C. or less in a chamber for chemical vapor deposition along with a mixture of WF6, H2, and SiH4 for filling the trench with tungsten. Also, W(CO)6 may be substituted for the WF6.
摘要翻译: 通过在用于化学气相沉积的室中将衬底加热至约375℃或更低的温度,同时将硅衬底的混合物混合,得到硅衬底中纵横比为至少20:1的垂直沟槽的令人满意的导电填料 WF6,H2和SiH4,用钨填充沟槽。 此外,W(CO)6可以代替WF6。
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