公开(公告)号：US07474104B2

公开(公告)日：2009-01-06

申请号：US11557668

申请日：2006-11-08

Applicant: Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffee ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

Inventor： Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffee ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

IPC: G01R27/26 ,  H01L23/544

CPC classification number: H01L23/544 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54453 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Structures for aligning wafers and methods for operating the same. The structure includes (a) a first semiconductor wafer including a first capacitive coupling structure, and (b) a second semiconductor wafer including a second capacitive coupling structure. The first and second semiconductor wafers are in direct physical contact with each other via a common surface. If the first and second semiconductor wafers are moved with respect to each other by a first displacement distance of 1 nm in a first direction while the first and second semiconductor wafers are in direct physical contact with each other via the common surface, then a change of at least 10−18 F in capacitance of a first capacitor comprising the first and second capacitive coupling structures results. The first direction is essentially parallel to the common surface.

Abstract translation: 用于对准晶片的结构及其操作方法。 该结构包括（a）包括第一电容耦合结构的第一半导体晶片和（b）包括第二电容耦合结构的第二半导体晶片。 第一和第二半导体晶片经由公共表面彼此直接物理接触。 如果第一和第二半导体晶片在第一方向上相对于彼此移动了1nm的第一位移距离，同时第一和第二半导体晶片经由公共表面彼此直接物理接触，则 包括第一和第二电容耦合结构的第一电容器的电容的至少10-18F的结果。 第一个方向基本上平行于共同的表面。