公开(公告)号：US4088490A

公开(公告)日：1978-05-09

申请号：US695484

申请日：1976-06-14

申请人： Peter J. Duke ,  Jerry Leff ,  Leo C. Liclican ,  Mark V. Powell

发明人： Peter J. Duke ,  Jerry Leff ,  Leo C. Liclican ,  Mark V. Powell

IPC分类号： G11C11/14 ,  G03F7/00 ,  H01F10/18 ,  H01F10/193 ,  H01F41/14 ,  H01F41/34 ,  H01L21/027 ,  H01L21/28 ,  H05K3/10 ,  H05K3/24 ,  G03C5/00

CPC分类号： H05K3/243 ,  G03F7/0035 ,  H01F41/34 ,  H01L21/0271 ,  H01L21/28 ,  H05K2203/0574 ,  H05K3/108

摘要： This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.

摘要翻译： 该单级屏蔽工艺包括使用两层正性光致抗蚀剂。 在第一层光致抗蚀剂中形成图案。 该光致抗蚀剂图案被加热并聚合到一定程度，当其被同一正性光致抗蚀剂的第二层覆盖时，即可以抵抗侵蚀，即第一光致抗蚀剂图案将保持其完整性。 在热处理之后，第一层图案对光化辐射基本上不敏感，并且容易用常规溶剂剥离。 在与第一层中形成的图案不同的第二层光致抗蚀剂中形成图案。 在第一金属沉积在以第二层图案曝光的基板的部分上之后，第二层图案被去除。 第二金属沉积在以第一层图案曝光的基板的部分上，然后去除图案。