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公开(公告)号：US20110108743A1
公开(公告)日：2011-05-12
申请号：US12903490
申请日：2010-10-13
Applicant: Anthony John BENNETT , Martin Brian Ward , Andrew James Shields
Inventor： Anthony John BENNETT , Martin Brian Ward , Andrew James Shields
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01S5/3412 , H01S5/3416
Abstract: A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunnelling time of carriers from said quantum dot to said first electrical contact and the tunnelling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.
Abstract translation: 一种包括半导体异质结构的光子源，所述半导体异质结构包括量子阱，与所述量子阱相邻的势垒区和设置在所述量子阱中的量子点，所述光子源还包括电接触和耦合到第一和第二电 触点，被配置为在所述量子点上施加可调电场以控制所述量子点的发射能量，所述电场可在整个工作范围内调节，其中载流子从所述量子点到所述第一电触点的隧穿时间和隧穿 从所述量子点到所述第二电接触的载流子的时间大于在所述操作范围上的所述量子点中的激子的辐射衰减时间，用于控制发射能量，所述光子源被配置为使得来自单个量子点的发射退出 说光子源。
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公开(公告)号：US09219191B2
公开(公告)日：2015-12-22
申请号：US12903490
申请日：2010-10-13
Applicant: Anthony John Bennett , Martin Brian Ward , Andrew James Shields
Inventor： Anthony John Bennett , Martin Brian Ward , Andrew James Shields
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01S5/3412 , H01S5/3416
Abstract: A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunneling time of carriers from said quantum dot to said first electrical contact and the tunneling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.
Abstract translation: 一种包括半导体异质结构的光子源，所述半导体异质结构包括量子阱，与所述量子阱相邻的势垒区和设置在所述量子阱中的量子点，所述光子源还包括电接触和耦合到第一和第二电 触点，被配置为在所述量子点上施加可调电场以控制所述量子点的发射能量，所述电场可在整个工作范围内调节，其中载流子从所述量子点到所述第一电触点的隧穿时间和隧穿 从所述量子点到所述第二电接触的载流子的时间大于在所述操作范围上的所述量子点中的激子的辐射衰减时间，用于控制发射能量，所述光子源被配置为使得来自单个量子点的发射退出 说光子源。
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公开(公告)号：US07087923B2
公开(公告)日：2006-08-08
申请号：US10860484
申请日：2004-06-04
Applicant: Martin Brian Ward , Andrew James Shields
Inventor： Martin Brian Ward , Andrew James Shields
IPC: H01L29/06
CPC classification number: B82Y20/00 , H01S5/1042 , H01S5/18347 , H01S5/341
Abstract: A photon source comprising a quantum dot layer having a plurality of quantum dots with an n-modal distribution in emission wavelength, said n-modal distribution in emission wavelength comprising n peaks in a plot of dot density as a function of emission wavelength where n is an integer of at least 2, the photon source further comprising isolating means for isolating the emission from a predetermined number of quantum dots.
Abstract translation: 一种光子源，包括具有在发射波长中具有n模式分布的多个量子点的量子点层，发射波长中的所述n模式分布包括作为发射波长的函数的点密度的图中的n个峰，其中n是 至少为2的整数，光子源还包括隔离装置，用于将发射与预定数量的量子点隔离。
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