-
公开(公告)号：US09219191B2
公开(公告)日：2015-12-22
申请号：US12903490
申请日：2010-10-13
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01S5/3412 , H01S5/3416
摘要： A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunneling time of carriers from said quantum dot to said first electrical contact and the tunneling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.
摘要翻译： 一种包括半导体异质结构的光子源，所述半导体异质结构包括量子阱，与所述量子阱相邻的势垒区和设置在所述量子阱中的量子点，所述光子源还包括电接触和耦合到第一和第二电 触点，被配置为在所述量子点上施加可调电场以控制所述量子点的发射能量，所述电场可在整个工作范围内调节，其中载流子从所述量子点到所述第一电触点的隧穿时间和隧穿 从所述量子点到所述第二电接触的载流子的时间大于在所述操作范围上的所述量子点中的激子的辐射衰减时间，用于控制发射能量，所述光子源被配置为使得来自单个量子点的发射退出 说光子源。
-
公开(公告)号：US20110108743A1
公开(公告)日：2011-05-12
申请号：US12903490
申请日：2010-10-13
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01S5/3412 , H01S5/3416
摘要： A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunnelling time of carriers from said quantum dot to said first electrical contact and the tunnelling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.
摘要翻译： 一种包括半导体异质结构的光子源，所述半导体异质结构包括量子阱，与所述量子阱相邻的势垒区和设置在所述量子阱中的量子点，所述光子源还包括电接触和耦合到第一和第二电 触点，被配置为在所述量子点上施加可调电场以控制所述量子点的发射能量，所述电场可在整个工作范围内调节，其中载流子从所述量子点到所述第一电触点的隧穿时间和隧穿 从所述量子点到所述第二电接触的载流子的时间大于在所述操作范围上的所述量子点中的激子的辐射衰减时间，用于控制发射能量，所述光子源被配置为使得来自单个量子点的发射退出 说光子源。
-
公开(公告)号：US07087923B2
公开(公告)日：2006-08-08
申请号：US10860484
申请日：2004-06-04
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/1042 , H01S5/18347 , H01S5/341
摘要： A photon source comprising a quantum dot layer having a plurality of quantum dots with an n-modal distribution in emission wavelength, said n-modal distribution in emission wavelength comprising n peaks in a plot of dot density as a function of emission wavelength where n is an integer of at least 2, the photon source further comprising isolating means for isolating the emission from a predetermined number of quantum dots.
摘要翻译： 一种光子源，包括具有在发射波长中具有n模式分布的多个量子点的量子点层，发射波长中的所述n模式分布包括作为发射波长的函数的点密度的图中的n个峰，其中n是 至少为2的整数，光子源还包括隔离装置，用于将发射与预定数量的量子点隔离。
-
公开(公告)号：US20110242632A1
公开(公告)日：2011-10-06
申请号：US13039893
申请日：2011-03-03
CPC分类号： G06N99/002 , B82Y10/00
摘要： A component comprising a qubit and a controller for said qubit, said component comprising a quantum dot and an excitation portion configured to produce a neutral exciton state in said quantum dot to form said qubit, the component further comprising a measuring unit to make an optical measurement relating to the orientation of said state, wherein said controller comprises voltage source coupled to electrical contacts configured to apply a modulated electric field across said quantum dot, wherein the modulation is faster than the decay time of said neutral exciton state.
摘要翻译： 一种包括量子位的组件和用于所述量子位的控制器，所述组件包括量子点和激励部分，其被配置为在所述量子点中产生中性激子状态以形成所述量子位，所述组件还包括测量单元以进行光学测量 涉及所述状态的取向，其中所述控制器包括耦合到电触点的电压源，所述电触点被配置为在所述量子点上施加调制电场，其中所述调制比所述中性激子状态的衰减时间快。
-
公开(公告)号：US08604511B2
公开(公告)日：2013-12-10
申请号：US13419525
申请日：2012-03-14
IPC分类号： H01L33/00
CPC分类号： H01S5/18394 , B82Y10/00 , B82Y20/00 , H01S5/041 , H01S5/06216 , H01S5/105 , H01S5/18319 , H01S5/18327 , H01S5/18369 , H01S5/3412
摘要： A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and change of state means for changing the state of the carriers within the quantum dot after a predetermined time duration, the carrier injection means injecting carriers which are configured to allow emission of radiation by radiative recombination.
摘要翻译： 一种包括光子源体的光子源，所述光子源体包括至少一个量子点; 用于将载流子注入所述至少一个量子点的载流子注入装置和在预定持续时间之后改变量子点内的载流子状态的装置，载流子注入装置注入被配置为允许通过 辐射重组。
-
公开(公告)号：US08547617B2
公开(公告)日：2013-10-01
申请号：US13039893
申请日：2011-03-03
IPC分类号： G06E3/00
CPC分类号： G06N99/002 , B82Y10/00
摘要： A component comprising a qubit and a controller for said qubit, said component comprising a quantum dot and an excitation portion configured to produce a neutral exciton state in said quantum dot to form said qubit, the component further comprising a measuring unit to make an optical measurement relating to the orientation of said state, wherein said controller comprises voltage source coupled to electrical contacts configured to apply a modulated electric field across said quantum dot, wherein the modulation is faster than the decay time of said neutral exciton state.
摘要翻译： 一种包括量子位的组件和用于所述量子位的控制器，所述组件包括量子点和激励部分，其被配置为在所述量子点中产生中性激子状态以形成所述量子位，所述组件还包括测量单元以进行光学测量 涉及所述状态的取向，其中所述控制器包括耦合到电触点的电压源，所述电触点被配置为在所述量子点上施加调制电场，其中所述调制比所述中性激子状态的衰减时间快。
-
公开(公告)号：US20130107617A1
公开(公告)日：2013-05-02
申请号：US13561843
申请日：2012-07-30
CPC分类号： G11C11/14 , B82Y10/00 , G02F1/015 , G02F2001/01791 , G11C7/005 , G11C13/04 , G11C2216/08
摘要： A quantum memory component including a quantum dot molecule having first and second quantum dots provided in respective first and second layers separated by a barrier layer; an exciton comprising an electron and hole bound state in said quantum dot molecule, the spin state of said exciton forming a qubit; first and second electrical contacts respectively provided below the first quantum dot and above the second quantum dot; a voltage source to apply an electric field across said quantum dot molecule; a controller to modulate the electric field across the quantum dot molecule, including an information acquiring circuit to acquire information concerning the relationship between fine structure splitting of the exciton and the applied electric field and a timing circuit to allow switching of the exciton from an indirect configuration to a direct configuration at predetermined times derived from the fine structure splitting.
摘要翻译： 一种量子存储器组件，包括量子点分子，其具有第一和第二量子点，该第一和第二量子点设置在由阻挡层隔开的相应的第一和第二层中; 在所述量子点分子中包含电子和空穴结合状态的激子，所述激子的自旋状态形成量子位; 分别设置在第一量子点的下方且位于第二量子点的上方的第一和第二电触头; 用于在所述量子点分子上施加电场的电压源; 控制器，用于调制跨越量子点分子的电场，包括信息获取电路以获取关于激子的精细结构分裂与所施加的电场之间的关系的信息，以及定时电路，以允许从间接配置切换激子 以从精细结构分裂得到的预定时间的直接配置。
-
8.发明申请公开(公告)号：US20120326116A1
公开(公告)日：2012-12-27
申请号：US13504734
申请日：2010-11-30
CPC分类号： G02B6/13 , B82Y10/00 , B82Y20/00 , G02B2006/12078 , H01L29/127 , H01S5/3412
摘要： A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a quantum dot, said quantum dot being configured to emit photons into said waveguide, the waveguide being configured such that it guides the output from a single quantum dot.
摘要翻译： 具有波导的半导体结构，所述半导体结构具有多个层，其中至少一个部分地被侧向氧化，所述横向氧化的材料用所述结构改变横向有效折射率，以在该结构内形成波导， 结构还具有量子点，所述量子点被配置为将光子发射到所述波导中，所述波导被配置为使得其引导来自单个量子点的输出。
-
公开(公告)号：US09304371B2
公开(公告)日：2016-04-05
申请号：US13727058
申请日：2012-12-26
申请人： Richard Mark Stevenson , Joanna Krystyna Skiba-Szymanska , Anthony John Bennett , Andrew James Shields
发明人： Richard Mark Stevenson , Joanna Krystyna Skiba-Szymanska , Anthony John Bennett , Andrew James Shields
CPC分类号： G02F1/2257 , B82Y10/00 , B82Y20/00 , G02F1/01708 , G02F2001/01791 , G02F2202/32 , G06N99/002
摘要： An optical device comprising a quantum dot provided in a resonant confinement structure, an output from said confinement structure and a pulsed excitation source for said quantum dot, wherein the quantum dot is configured to allow the emission of photons having a first energy in response to a pulse from said excitation source, said resonant confinement structure providing optical confinement, the first energy being different to the resonant energy of the resonant confinement structure, the optical device further comprising a timing unit, said timing unit being configured to select photons which have been emitted from the quantum dot due to excitation by a pulse, the timing unit selecting photons emitted after the duration of the pulse which caused the emission of the photons.
摘要翻译： 一种光学装置，包括设置在谐振限制结构中的量子点，来自所述限制结构的输出和用于所述量子点的脉冲激励源，其中所述量子点被配置为允许响应于所述量子点发射具有第一能量的光子 所述谐振限制结构提供光限制，所述第一能量与所述谐振限制结构的谐振能不同，所述光学装置还包括定时单元，所述定时单元被配置为选择已发射的光子 由于由脉冲激发而产生的量子点，定时单元选择在导致光子发射的脉冲持续时间之后发射的光子。
-
公开(公告)号：US20100157310A1
公开(公告)日：2010-06-24
申请号：US12600598
申请日：2008-05-16
CPC分类号： G01C19/72 , H04B10/548 , H04L9/0858
摘要： An optical system including: a photon source; first directing elements configured to direct photons to follow a first path through the optical system; second directing elements configured to direct photons to follow a second path through the optical system, wherein the second path is the reverse of the first path, photons travelling through the first path having a different polarization to those travelling through the second path; and a mechanism varying the relative phase shift between photons following the first path and photons following the second path.
摘要翻译： 一种光学系统，包括：光子源; 第一引导元件被配置成引导光子跟随通过光学系统的第一路径; 第二引导元件被配置成引导光子跟随通过光学系统的第二路径，其中第二路径与第一路径相反，穿过第一路径的光子具有与通过第二路径行进的那些不同的极化; 以及改变跟随第一路径的光子与第二路径之后的光子之间的相对相移的机制。
-
-
-
-
-
-
-
-
-
搜索结果
60 条记录 (耗时 0.03 秒)
